Erwin Meinders
Martens Hubert C F, Meinders Erwin R: Apparatus and method for recording an information on a recordable optical record carrier using oval spot profile. Koninklijke Philips Electronics, Martens Hubert C F, Meinders Erwin R, DEGUELLE Wilhelmus H G, June 24, 2004: WO/2004/053852

To obtain a higher recording density, and thus higher data capacity, it is proposed according to the present invention to reduce the numerical aperture of the optical means (3, 4) in the direction orthogonal to the information recording direction, which is the radial direction for an optical disc, d ...

Isaiah Oladeji
Robert YS Huang, Scott Jessen, Subramanian Karthikeyan, Joshua Jia Li, Isaiah O Oladeji, Kurt Geroge Steiner, Joseph Ashley Taylor: Mask layer and dual damascene interconnect structure in a semiconductor device. Beusse Brownlee Wolter Mora & Maire P A, June 24, 2004: US20040121579-A1

A mask layer having four mask films used in the fabrication of an interconnect structure of a semiconductor device. The first mask film and the third mask film have substantially equal etch rates. The second mask film and the fourth have substantially equal etch rates film, and different from that o ...

Deodatta Shenai-Khatkhate
Deodatta Vinayak Shenai Khatkhate, Ronald L Dicarlo, Michael L Timmons: Preparation of organometal compounds. Shipley Company, Edwards & Angell, June 24, 2004: US20040122248-A1

A method of preparing organometal compounds that does not use oxygenated solvents is provided. The compounds produced by such method are particularly useful as precursor compounds for metalorganic chemical vapor deposition processes used in the manufacture of electronic devices. Methods of depositin ...

Benjamin Mattes
Benjamin R Mattes, Phillip N Adams, Dali Yang, Lori A Brown, Andrei G Fadeev, Ian D Norris: Spinning, doping, dedoping and redoping polyaniline fiber. Cochran Freund & Young, June 24, 2004: US20040119187-A1

A composition of matter suitable for spinning polyaniline fiber, a method for spinning electrically conductive polyaniline fiber, a method for exchanging dopants in polyaniline fibers, and methods for dedoping and redoping polyaniline fibers are described.

Xavier Baie
Doris Bruce B, Chidambarrao Dureseti, Baie Xavier, Mandelman Jack A, Sandana Devendra K, Schepis Dominic J: Field effect transistor with improved charge carrier mobility and manufacturing method thereof. International Business Machines Corporation, June 18, 2004: KR1020030086391

PURPOSE: An FET(Field Effect Transistor) and a manufacturing method thereof are provided to improve charge carrier mobility by using a compressive film. CONSTITUTION: An FET includes a channel area(22), an undercut area under the channel area, a gate electrode(28) on the channel area, and a compress ...

Benjamin Mattes
Qi Baohua, Mattes Benjamin R: Resistive heating using polyaniline fiber. Santa Fe Science And Technology, FREUND Samuel M, June 17, 2004: WO/2004/051672 (1 worldwide citation)

The use of conductive polyaniline fibers for resistive heating applications is described. Unlike metal wires and conductive-polymer coated fibers, under certain conditions, electric voltages or currents used to generate heat in the fibers were found to produce irreversible changes to the polymer bac ...

Craig Allen
Michael Chad Hollis, Craig Allen Carroll: Bevel angle locking actuator and bevel angle locking system for a saw. Hunton & Williams, June 17, 2004: US20040112190-A1

A benchtop saw, such as a compound miter saw, has a bevel angle locking actuator for locking the bevel angle of the saw blade which is easier for the operator to reach than prior art bevel angle locking actuators that are located at the rear of the saw. The bevel angle locking actuator is mounted fo ...

Eb Eshun
Douglas D Coolbaugh, John M Cotte, Ebenezer E Eshun, Kenneth J Stein, Kunal Vaed, Richard P Volant: Damascene integration scheme for developing metal-insulator-metal capacitors. International Business Machines Corporation, Delio & Peterson, June 17, 2004: US20040113235-A1

The invention is directed to unique high-surface area BEOL capacitor structures with high-k dielectric layers and methods for fabricating the same. These high-surface area BEOL capacitor structures may be used in analog and mixed signal applications. The capacitor is formed within a trench with pede ...

Xavier Baie
Dureseti Chidambarrao, Omer H Dokumaci, Bruce B Doris, Jack A Mandelman, Xavier Baie: Stress inducing spacers. International Business Machines Corporation, International Business Machines Corporation, Dept 18g, June 17, 2004: US20040113217-A1

A substrate under tension and/or compression improves performance of devices fabricated therein. Tension and/or compression can be imposed on a substrate through selection of appropriate gate sidewall spacer material disposed above a device channel region wherein the spacers are formed adjacent both ...

Belgacem Haba Belgacem (Bel) Haba
Belgacem Haba, Klaus Jurgen Wolter: Joining semiconductor units with bonding material. Tessera, Lerner David Littenberg Krumholz & Mentlik, June 15, 2004: US06750539 (22 worldwide citation)

A unit includes one or more semiconductor chips. Each chip has a front surface with a plurality of contacts surrounded by a passivated surface. The passivated surface is not wettable by bonding material. The contacts have masses of bonding material thereon and the masses have a height less than the ...