Ravi Laxman
Chongying Xu, Thomas H Baum, Alexander S Borovik, Ziyun Wang, James TY Lin, Scott Battle, Ravi K Laxman: Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films. Intellectual Property Technology Law, June 26, 2003: US20030116421-A1 (1 worldwide citation)

A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant thin films hav ...

Isaiah Oladeji
Robert Y S Huang, Scott Jessen, Subramanian Karthikeyan, Joshua Jia Li, Isaiah O Oladeji, Kurt Geroge Steiner, Joseph Ashley Taylor: Mask layer and dual damascene interconnect structure in a semiconductor device. James H Beusse Esquire, Beusse Brownlee Bowdoin & Wolter Pa, June 26, 2003: US20030119305-A1

A mask layer having four mask films used in the fabrication of an interconnect structure of a semiconductor device. The first mask film and the third mask film have substantially equal etch rates. The second mask film and the fourth have substantially equal etch rates film, and different from that o ...

Brian Goodall
Andrew Bell, Larry F Rhodes, Brian L Goodall, John C Fondran: In mold addition polymerization of norbornene-type monomers using group 10 metal complexes. The BF Goodrich Company, Nestor W Shust, Hudak & Shunk Co LPA, June 26, 2003: US20030120006-A1

A catalyst system and a process for the bulk addition polymerization or of polycyclic olefins, such as norbornene, methylnorbornene, ethylnorbornene, butylnorbornene or hexylnorbornene, 1,2,3,4,4a,5,8,8a-octahydro-1,4:5,8-dimethanonapthalene, 5,5-(1,2-ethanediyl)bisbicyclo[2.2.1]hept-2-ene, and 1,4, ...

Cho Bo Yeon: Post treatment method of metal interconnection for semiconductor device. Dongbu Electronics, June 26, 2003: KR1020010082061 (20 worldwide citation)

PURPOSE: A post treatment method of a metal interconnection for a semiconductor device is provided to prevent the metal interconnection from being corroded by performing a pre-heating process using N2 gas before a wafer plasma treatment process so that AlCl3 remaining on a wafer is immediately remov ...

Glen Hush: Programmable conductor random access memory and a method for writing thereto. Dickstein Shapiro Morin & Oshinsky, June 26, 2003: US20030117831-A1 (14 worldwide citation)

The present invention provides an improved write circuit and method for writing a programmable conductor random access memory (PCRAM) cell. The method comprises precharging a bit line to a first voltage and applying a second voltage to a first terminal of a chalcogenide memory element. A second term ...

Alexandre E Andreev, Elyar E Gasanov, Ranko Scepanovic: Multidirectional router. Leo Peters, Intellectual Property Law Department, June 26, 2003: US20030121017-A1 (12 worldwide citation)

The present invention is directed to a system and method for providing multidirectional routing. The present invention may provide an arbitrary number of routing layers and an arbitrary direction on each of those layers to provide a smaller die size and to reduce power consumption by providing more ...

Labrec Brian, Anderson Joseph, Jones Robert, Batey Danielle: Elements de securite a images multiples pour documents didentification, et procedes de realisation, Multiple image security features for identification documents and methods of making same. Digimarc Id Systems, Digimarc Id Systems, OYEN WIGGS GREEN & MUTALA, June 26, 2003: CA2470094 (9 worldwide citation)

A method for making a secure identification document with multiple images is provided. Information is provided to an information bearing layer, the information constructed and arranged to be capable of providing multiple images when the printed information is viewed at different predetermined angles ...

Park In Seong: Method for controlling profile of semiconductor device using plasma etching equipment. Dongbu Electronics, June 26, 2003: KR1020010082059 (9 worldwide citation)

PURPOSE: A method for controlling the profile of a semiconductor device using plasma etching equipment is provided to improve reliability of the semiconductor device by gradually controlling a source power and a bias power used in a plasma etching process. CONSTITUTION: A plasma etching process reci ...

Jin Jong Jin: Guide roller device of automatic self-aligning roller stand. Posco, June 26, 2003: KR1020010082060 (7 worldwide citation)

PURPOSE: A guide roller device used in an automatic self-aligning roller stand is provided to adjust the meandering of a belt regardless of a driving direction of the belt. CONSTITUTION: A guide roller device includes a pair of guide rollers(50), a supporting shaft(40), a supporter(74), a sliding sh ...

Hong Jun, Kim Yeong Jun, Ko Sang Geun: Apparatus for detecting close of dust transfer path in dust collector. Posco, June 26, 2003: KR1020010082058 (6 worldwide citation)

PURPOSE: An apparatus for detecting close of dust transfer path in dust collector is provided to accurately sense blocking of the transfer path of collected dust by pressure variation. CONSTITUTION: The apparatus comprises first pressure inlet pipe an one end of which is connected to duct(12) so tha ...

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