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Belgacem Haba Belgacem (Bel) Haba
John W Smith, Belgacem Haba: Flexible lead structures and methods of making same. Tessera, Lerner David Littenberg Krumholz & Mentlik, April 17, 2003: US20030071346-A1

An interconnect component comprises a compliant layer having a first surface and a plurality of electrically conductive leads having first ends and extending through the compliant layer. The first ends extend generally parallel to said first surface.


2
John Yamamoto
John Hiroshi Yamamoto, Won Shu Park, Aaron Sarafinas, Michael Miller Cook, Stephen Gerard Maroldo: Method of making lithium borohydride. Rohm And Haas Company, April 10, 2003: US20030068265-A1

The present invention relates to a method of making lithium borohydride that gives high yields while maintaining ease of purification.


3
Belgacem Haba Belgacem (Bel) Haba
Donald V Perino, Belgacem Haba, Sayeh Khalili: Multiple channel modules and bus systems using same. Rambus, April 8, 2003: US06545875 (39 worldwide citation)

Various module structures are disclosed which may be used to implement modules having 1 to N channels. Bus systems may be formed by the interconnection of such modules.


4
Belgacem Haba Belgacem (Bel) Haba
Masud Beroz, Belgacem Haba: Microelectronic joining processes with temporary securement. Tessera, Lerner David Littenberg Krumholz & Mentlik, April 8, 2003: US06543131 (23 worldwide citation)

A method of making microelectronic assemblies includes temporarily securing one or more microelectronic elements in place on one or more components using one or more temporary securements extending between the microelectronic elements and components and adhering to the elements and components. Condu ...


5
Ravi Laxman
Ravi K Laxman, Chongying Xu, Thomas H Baum: Low-K dielectric thin films and chemical vapor deposition method of making same. Margaret Chappuis, ATMI, April 3, 2003: US20030064154-A1 (2 worldwide citation)

A CVD process for producing low-dielectric constant, SiOC thin films using organosilicon precursor compositions having at least one alkyl group and at least one cleavable organic functional group that when activated rearranges and cleaves as a highly volatile liquid or gaseous by-product. In a first ...


6
Isaiah Oladeji
Isaiah O Oladeji, Scott Jessen, Joseph Ashley Taylor: Mask layer and interconnect structure for dual damascene semiconductor manufacturing. Beusse Brownlee Bowdoin & Wolter P A, April 3, 2003: US20030064582-A1 (1 worldwide citation)

A novel mask layer is used in the dual damascene construction of an interconnect structure of an integrated circuit device. The interconnect structure has a low-k dielectric material. The mask layer has a passivation film deposited on the low-k dielectric material, a barrier film is deposited over t ...


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Belgacem Haba Belgacem (Bel) Haba
Masud Beroz, Thomas H DiStefano, Anthony B Faraci, Joseph Fjelstad, Belgacem Haba: Components with releasable leads and methods of making releasable leads. Tessera, Lerner David Littenberg Krumholz & Mentlik, April 1, 2003: US06541845 (3 worldwide citation)

A connection component for a microelectronic device such as a semiconductor chip incorporates a support layer and conductive structures extending across a surface of the support layer. The conductive structures have anchors connecting them to the support layer, and releasable or unanchored portions.


8
Eugene Fitzgerald
Eugene A Fitzgerald: Buried channel strained silicon FET using a supply layer created through ion implantation. AmberWave Systems Corporation, Testa Hurwitz & Thibeault, April 29, 2003: US06555839 (132 worldwide citation)

A circuit including at least one strained channel, enhancement mode FET, and at least one strained channel, depletion mode FET. The depletion mode FET includes an ion implanted dopant supply. In exemplary embodiments, the FETs are surface channel or buried channel MOSFETS. In another exemplary embod ...


9
Jennifer J.-N. Liu
Li Mo, James A Spallin, Jennifer J Liu, Abinder S Dhillon, James H Buchanan, Badarinath Devalla: System and method for resizing the physical link bandwidth based on utilization thereof. Fujitsu Networks, Munsch Hardt Kopf & Harr PC, April 17, 2003: US20030072264-A1

A method for allocating and resizing a link on a communication medium is provided. The utilization of an allocated link is monitored and an unused bandwidth thereof is determined. Upon request for allocation of a second link, at least a portion of the unused bandwidth is included in the bandwidth of ...


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