1
David Sherrer
David W Sherrer, Noel A Heiks, Dan A Steinberg: Optoelectronic device-optical fiber connector having micromachined pit for passive alignment of the optoelectronic device. Joseph P Quinn Esq, Brown Rudnick Berlack Israels, February 20, 2003: US20030034438-A1 (2 worldwide citation)

A connector for optically connecting an array of optoelectronic device (e.g. VCSELS or photodetectors) and an array of optical waveguides (e.g. optical fibers or integrated optical waveguides). The device has a submount chip for holding the optoelectronic device. The submount chip has a micromachine ...


2
Charles Szmanda
Charles R Szmanda, Anthony Zampini: Solvents and photoresist compositions for short wavelength imaging. Shipley Company, Edwards & Angell, February 20, 2003: US20030036016-A1 (1 worldwide citation)

New photoresists are provides that are suitable for short wavelength imaging, particularly sub-170 nm such as 157 nm. Resists of the invention comprise a fluorine-containing polymer, a photoactive component, and a solvent component. Preferred solvents for use on the resists of the invention can main ...


3
John Yamamoto
Won Suh Park, John Hiroshi Yamamoto: Method for reduction of substituted malonates to diols. Rohm And Haas Company, February 20, 2003: US20030036666-A1

A method for reducing a malonate having the formula R1R2C(CO2R3)(Co2R4) to a diol having the formula R1R2C(CH2OH)2 comprising treating said malonate with sodium aluminum hydride.


4
Eugene Fitzgerald
Eugene A Fitzgerald, Nicole Gerrish: CMOS inverter and integrated circuits utilizing strained silicon surface channel MOSFETs. Amberwave Systems Corporation, Testa Hurwitz & Thibeault, February 20, 2003: US20030034529-A1 (6 worldwide citation)

A CMOS inverter having a heterostructure including a Si substrate, a relaxed Si1-xGex layer on the Si substrate, and a strained surface layer on said relaxed Si1-xGex layer; and a pMOSFET and an nMOSFET, wherein the channel of said pMOSFET and the channel of the nMOSFET are formed in the strained su ...


5
Jennifer J.-N. Liu
Li Mo, Jennifer J Liu, Abinder S Dhillon, Nimer Yaseen, Xiao Hu: System and method to perform non-service effecting bandwidth reservation using a reservation signaling protocol. Fujitsu Networks, Munsch Hardt Kopf & Harr PC, February 20, 2003: US20030037276-A1

A method to facilitate recovery of a node in a communications network is disclosed. The method comprises receiving one or more messages from at least another node in the communications network and restoring connectivity of a recovering node based at least in part on the received messages.


6
Youchun Shi: Piezoelectric-optic switch and method of fabrication. Corning Incorporated, February 20, 2003: US20030035611-A1 (19 worldwide citation)

A piezoelectric-optic switch and method of fabrication therefor is provided. The switch includes a Mach-Zehnder interferometer having a pair of waveguides disposed in a planar substrate, and strips of piezoelectric material such as PZT disposed on a top surface of the substrate over each of the wave ...


7
Michael N Kozicki: Programmable microelectronic devices and methods of forming and programming same. Snell & Wilmer, One Arizona Center, February 20, 2003: US20030035314-A1 (16 worldwide citation)

A microelectronic programmable structure and methods of forming and programming the structure are disclosed. The programmable structure generally include an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying a bias across the electrodes, an ...


8
Michael N Kozicki: Microelectronic device, structure, and system, including a memory structure having a variable programmable property and method of forming the same. Snell & Wilmer, One Arizona Center, February 20, 2003: US20030035315-A1 (16 worldwide citation)

A microelectronic programmable structure suitable for storing information and a method of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applyi ...


9
Miller Raanan A, Krylov Evgeny, Nazarov Erkinjon G, Eiceman Gary A, Kaufman Lawrence A: Capacitive discharge plasma ion source. Sionex Corporation, THIBODEAU David J Jr, February 20, 2003: WO/2003/015120 (8 worldwide citation)

In a system (10) for chemical analysis, an RF-driven plasma ionization device (11) including a pair of spaced-apart and plasma-isolated electrodes (14, 16), the electrodes (14, 16) are connected to a power source (22) wherein the electrodes (14, 16) act as plates of a capacitor of a resonant circuit ...


10
James E Chitwood, William Banning Vail, William G Crossland, Damir S Skerl, Robert L Dekle: High power umbilicals for subterranean electric drilling machines and remotely operated vehicles. William Banning Vail Iii, February 20, 2003: US20030034177-A1 (6 worldwide citation)

The method of providing in excess of 60 kilowatts of electrical power to the electrical motor of a subterranean electric drilling machine through a substantially neutrally buoyant composite umbilical containing electrical conductors to reduce the frictional drag on the neutrally buoyant umbilical. D ...