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Belgacem Haba Belgacem (Bel) Haba
Belgacem Haba: Microelectronic packaging methods and components. Lerner David Littenberg Krumholz & Mentlik, June 20, 2002: US20020074081-A1

A sheet including lead regions with conductors and a main region surrounding the lead regions is formed on the front surface of a microelectronic element such as a wafer, or assembled thereto, so that the conductors are connected to contacts on the microelectronic element. After the sheet is in plac ...


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Alt Ofer, Rapoport Simon, Shamir Oren, Knyazhansky Ilya: Method and interface for intelligent user-machine interaction. Poly Information, Alt Ofer, Rapoport Simon, Shamir Oren, Knyazhansky Ilya, LUZZATTO Kfir, June 20, 2002: WO/2002/049253 (12 worldwide citation)

A method for allowing interaction between a user and a computerized system (202) by using human natural language and/or textual data exchange. A conversation domain consisting of a plurality of phrases having valid logical meaning is generated. Each phrase corresponds to an aspect of the operation o ...


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Amarasinghe Amal: Headgear. Resmed, Amarasinghe Amal, DAVIDSON Geoffrey Robert, June 20, 2002: WO/2002/047749 (8 worldwide citation)

A headgear for securing and positioning a mask suitable for the treatment of sleep disordered breathing is constructed from a composite including polyurethane foam. It includes a back portion (40) with upper and lower straps (20, 30) connected to the back portion. The straps have relatively narrow s ...


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Tony P Chiang, Karl F Leeser, Jeffrey A Brown, Jason E Babcoke: Process sequence for atomic layer deposition. Brian D Ogonowsky, SKJERVEN MORRILL MacPherson, June 20, 2002: US20020076507-A1 (7 worldwide citation)

An atomic layer deposition (ALD) process is based upon the sequential supply of at least two separate reactants into a process chamber. A first reactant reacts (becomes adsorbed) with the surface of the substrate via chemisorption. The first reactant gas is removed from the chamber, and a second rea ...


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Allen Charles, Sartor Joe: Electrosurgical electrode shroud. Sherwood Services, Allen Charles, Sartor Joe, DENNINGER Douglas, June 20, 2002: WO/2002/047568 (6 worldwide citation)

An electrosurgical electrode shroud including a hollow substantially cylindrical member having a first end portion and a second end portion; the first end portion defining an opening which is configured and dimensioned to receive an electrosurgical electrode assembly therein; the second end portion ...


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Tony P Chiang, Karl F Leeser, Jeffrey A Brown, Jason E Babcoke: Varying conductance out of a process region to control gas flux in an ALD reactor. Brian D Ogonowsky, Skjerven Morrill MacPherson, June 20, 2002: US20020076508-A1 (5 worldwide citation)

A deposition system includes a process chamber for conducting an ALD process to deposit layers on a substrate. In one embodiment, instead of varying the gas flux on a substrate in the chamber by controlling the flow of gas upstream of the process chamber, the gas flux on the substrate is controlled ...


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Maguire Patrick G, Gudmestad Tarald, Murray Mark, Duff Richard: Outil de pose hydraulique a amortisseur de couple, Hydraulic running tool with torque dampener. Weatherford Lamb, Weatherford Lamb, MARKS & CLERK, June 20, 2002: CA2427453 (5 worldwide citation)

The present invention generally provides a running tool (100) comprising a torque-dampening system. A first portion (116) and a second portion (118) of the running tool are operably related by a torsion interface (128). In one embodiment, the torsion interface includes a plurality of interlaced teet ...


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Juha Hujanen, Ivo Raaijmakers: Thin films for magnetic device. Knobbe Martens Olson & Bear, June 20, 2002: US20020076837-A1 (5 worldwide citation)

Methods are provided for forming uniformly thin layers in magnetic devices. Atomic layer deposition (ALD) can produce layers that are uniformly thick on an atomic scale. Magnetic tunnel junction dielectrics, for example, can be provided with perfect uniformity in thickness of 4 monolayers or less. F ...


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Brian S Doyle, Brian Roberds: Methodology for control of short channel effects in MOS transistors. Blakely Sokoloff Taylor & Zafman, June 20, 2002: US20020074598-A1 (5 worldwide citation)

A method of improving short channel effects in a transistor. First, a substance is implanted in a substrate. The substrate is then annealed such that the implanted substance forms at least one void in the substrate. Then, a transistor having a source, a drain, and a channel region is formed on the s ...