1
Belgacem Haba Belgacem (Bel) Haba
Joseph Fjelstad, Masud Beroz, John W Smith, Belgacem Haba: Microelectronic packages having deformed bonded leads and methods therefor. Lerner David Littenberg Krumholz & Mentlik, June 6, 2002: US20020068426-A1 (1 worldwide citation)

A method of making a microelectronic assembly includes juxtaposing a first element, such as a dielectric sheet having conductive leads thereon with a second element, such as a semiconductor chip, having contact thereon, and wire bonding the conductive leads on the first element to the contacts on th ...


2
Eugene Fitzgerald
Eugene A Fitzgerald, Richard Hammond, Matthew Currie: Gate technology for strained surface channel and strained buried channel MOSFET devices. Samuels Gauthier & Stevens, June 6, 2002: US20020068393-A1

A method of fabricating a semiconductor device including providing a semiconductor heterostructure, the heterostructure having a relaxed Si1-xGex layer on a substrate, a strained channel layer on the relaxed Si1-xGex layer, and a Si1-yGey layer; removing the Si1-yGey layer; and providing a dielectri ...


3
Cen Shan, Kleiman Lawrence: Incorporation and priming function of trnalys in hiv and related viruses. Mcgill University, Cen Shan, Kleiman Lawrence, DUBUC J, June 6, 2002: WO/2002/044349 (10 worldwide citation)

The present invention relates to the demonstration of a direct relationship between the amount of tRNA?Lys3¿ packaged into HIV, the amount of tRNA?Lys3¿ placed onto the reverse transcriptase primer binding site which can initiate reverse transcription, and viral infectivity. The present invention al ...


4
Hujanen Juha, Raaijmakers Ivo: Thin films for magnetic devices. Hujanen Juha, Raaijmakers Ivo, Asm International, DELANEY Karoline A, June 6, 2002: WO/2002/045167 (10 worldwide citation)

Methods are provided for forming uniformly thin layers in magnetic devices. Atomic layer deposition (ALD) can produce layers that are uniformly thick on an atomic scale. Magnetic tunnel junction dielectrics, for example, can be provided with perfect uniformity in thickness of 4 monolayers or less. F ...


5
Ts O Paul O P, Duff Robert, Deamond Scott: Conjugates of glycosylated/galactosylated peptide. Cell Works, Johns Hopkins University, Ts O Paul O P, Duff Robert, Deamond Scott, LARCHER Carol, June 6, 2002: WO/2002/043771 (7 worldwide citation)

A conjugate of formula A-L-P, in which: A represents a glycosylated/galactosylated peptide that binds to a cell-surface receptor, L represents a bifunctional linker, which does not comprise a naturally occurring amino acid and is covalently bonded to A and P in a regiospecific manner, and P represen ...


6
Tomizuka Kazuma, Ishida Isao, Lonberg Nils, Halk Ed: Transgenic transchromosomal rodents for making human antibodies. Medarex, Kirin Beer Kabushiki Kaisha, Tomizuka Kazuma, Ishida Isao, Lonberg Nils, Halk Ed, KAUFMAN Michael A, June 6, 2002: WO/2002/043478 (6 worldwide citation)

The present invention provides a transgenic nonhuman mammal, preferably a rodent, comprising two human immunoglobulin loci, wherein one of two said human immunoglobulin loci is a human heavy chain locus and the other locus is a human light chain locus; and wherein only one of said loci is of a trans ...


7
Ito Fuminori, Okada Yuko, Tomihari Yoshinori, Konuma Kazuo, Okamoto Akihiko: Pattern forming method for carbon nanotube, and field emission cold cathode and method of manufacturing the cold cathode. Nec Corporation, Ito Fuminori, Okada Yuko, Tomihari Yoshinori, Konuma Kazuo, Okamoto Akihiko, INAGAKI Kiyoshi, June 6, 2002: WO/2002/045113 (6 worldwide citation)

A pattern forming method for carbon nanotube (106) capable of forming a pattern by wet-etching a carbon nano-tube (106) by a transfer method, comprising the steps of using a solution dissolving a binder used for the transfer method as a solution used for wet etching and, during the wet etching, rubb ...


8
Steven Teig, Joseph L Ganley: Method and apparatus for placing circuit modules. Stattler Johansen & Adeli, June 6, 2002: US20020069397-A1 (5 worldwide citation)

Some embodiments of the invention are placers that use diagonal lines in calculating the costs of potential placement configurations. For instance, some embodiments estimate the delay cost of a placement configuration by accounting for the potential use of diagonal wiring in the layout. Some of thes ...


9
King Tsu Jae: Negative differential resistance field effect transistor (NDR-FET) & circuits using the same. J Nicholas Gross Attorney at Law, June 6, 2002: US20020066933-A1 (5 worldwide citation)

An improved negative differential resistance field effect transistor (NDR-FET) is disclosed. The NDR FET includes a charge trapping layer formed at or extremely near to an interface between a substrate (which can be silicon or SOI) and a gate insulation layer. In this fashion, charge traps can be op ...


10
King Tsu Jae: Charge pump for negative differential resistance transistor. J Nicholas Gross Attorney at Law, June 6, 2002: US20020067651-A1 (5 worldwide citation)

An integrated circuit device includes a charge pump for providing a bias signal to a field effect transistor (FET) that is capable of operating in a negative differential resistance mode. The bias signal is applied to a gate of the NDR FET to control the characteristics of the NDR behavior.