1
Maricela Morales Charles Szmanda
Peter Trefonas, Gary N Taylor, Charles R Szmanda: Novel polymers and photoresist compositions for short wavelength imaging. Shipley Company, Peter F Corless, Edwards & Angell, May 2, 2002: US20020051938-A1

This invention relates to resins and photoresist compositions that comprise such resins. Preferred polymers of the invention comprise adjacent saturated carbon atoms, either integral or pendant to the polymer backbone, that have a substantially gauche conformation. Polymers of the invention are part ...


2
Charles Szmanda
Robert L Brainard, Charles R Szmanda: Photoresists for imaging with high energy radiation. Shipley Company, Edwards & Angell, Dike Bronstein Roberts & Cushman IP Group, May 2, 2002: US20020051932-A1

Photoresists are provided that are useful for imaging with high energy radiation sources, such as EUV, electron beam, ion beam and x-ray radiation. Resists of the invention can exhibit enhanced sensitivity and resolution upon such high energy imaging. In a first aspect, preferred resists of the inve ...


3
Brian Goodall
John Henry Lipian, Larry F Rhodes, Brian L Goodall, Andrew Bell, Richard A Mimna, John C Fondran, Saikumar Jayaraman, April D Hennis, Christine N Elia, Jennifer D Polley, Ayusman Sen: Catalyst and methods for polymerizing cycloolefins. The B F Goodrich Company, May 2, 2002: US20020052454-A1

Methods for the addition polymerization of cycloolefins using a cationic Group 10 metal complex and a weakly coordinating anion of the formula: [(R)zM(L)x(L)y]b[WCA]d wherein [(R)zM(L)x(L)y] is a cation complex where M represents a Group 10 transition metal; R represents an anionic hydrocarbyl conta ...


4
Eugene Fitzgerald
Eugene A Fitzgerald: Silicon wafer with embedded optoelectronic material for monolithic OEIC. Samuels Gauthier & Stevens, May 2, 2002: US20020052061-A1 (2 worldwide citation)

A structure and method of fabricating an optically active layer embedded in a Si wafer, such that the outermost epitaxial layer exposed to the CMOS processing equipment is always Si or another CMOS-compatible material such as SiO2. Since the optoelectronic layer is completely surrounded by Si, the w ...


5
Eugene Fitzgerald
Eugene A Fitzgerald: Buried channel strained silicon FET using a supply layer created through ion implantation. Samuels Gauthier & Stevens, May 2, 2002: US20020052084-A1 (2 worldwide citation)

A method of fabricating a buried channel FET including providing a relaxed SiGe layer on a substrate, providing a channel layer on the relaxed SiGe layer, providing a SiGe cap layer on the channel layer, and ion implanting a dopant supply. The dopant supply can be ion implanted in either the SiGe ca ...


6
Wiener Eitan T, Donofrio William T, Kemerling Robert A: Apparatus and method for altering generator functions in an ultrasonic surgical system. Ethicon Endo Surgery, May 2, 2002: EP1201196-A1 (238 worldwide citation)

There is disclosed a system for implementing surgical procedures comprising: an ultrasonic surgical hand piece (30) having an end-effector (32); a console (10) having a digital signal processor (DSP) for controlling the hand piece; an electrical connection(19) connecting the hand piece (30) and the ...


7
Adkisson James W, Agnello Paul D, Ballantine Arne W, Divakaruni Rama, Jones Erin C, Nowak Edward J, Rankin Jed H: Method of fabricating semiconductor side wall fin. Ibm, May 2, 2002: EP1202335-A2 (95 worldwide citation)

A double gated silicon-on-insulator (SOI) MOSFET is fabricated by forming epitaxially grown channels, followed by a damascene gate. The double gated MOSFET features narrow channels, which increases current drive per layout width and provides low out conductance.


8
Nagai Haruhiko, Kamizawa Sadaomi, Nishino Ko, Urakabe Takahiro, Iwata Akihiko: Image display and image displaying method. Mitsubishi Electric, May 2, 2002: EP1202244-A1 (92 worldwide citation)

It is aimed to perform a gradation display by using a light source array. A pixel having a desired luminance Y can be displayed by changing an emission intensity P of LED light source during one pixel display period C and turning on and off LCD corresponding to the change of the emission intensity P ...


9
Border John, Dambrauskas Robert, Sadlik Craig: Method of manufacturing a microlens array mold and a microlens array. Eastman Kodak Co, May 2, 2002: EP1201407-A2 (71 worldwide citation)

A method for making microlens molds and microlens array molds is described which utilizes a spinning half radius diamond cutting member operated in a plunge cut in a technique similar to milling to cut the optical surface into a diamond turnable material. The method can be used to make high sag lens ...


10
Ikai Masamichi, Takeuchi Hisato, Tokito Shizuo, Taga Yasunori: Organic light-emitting devices. Toyoda Chuo Kenkyusho, May 2, 2002: EP1202608-A2 (51 worldwide citation)

In an organic light emitting device, a hole transporting layer 12 is formed on an anode 10, and is then doped with a phosphorescent molecule such as Ir(ppy)3 or the like to thereby form a light emitting layer. On the light emitting layer is formed an electron transporting layer 14 on which is formed ...