1
David Sherrer
Dan A Steinberg, Mindaugas F Dautartas, David W Sherrer: Multi-level lithography masks. Jones Volentine, March 14, 2002: US20020031711-A1

A lithography multi-level mask includes a base layer with at least one mesa disposed over the base layer. The mesa has a first transmittance and the substrate has a second transmittance. The first transmittance is greater than or equal to the second transmittance. An image lithography method include ...


2
Maricela Morales
Peter Trefonas, Manuel doCanto, Edward K Pavelchek: Antireflective coating compositions. Shipley Company, Peter F Corless, c o Dike Bronstein Roberts & Cushman, March 14, 2002: US20020031729-A1 (5 worldwide citation)

Antireflective compositions are provided that contain a basic additive material. Such use of a basic material can significantly decrease or even completely eliminate notching of an overcoated photoresist relief image. Antireflective formulations of the invention are preferably crosslinking compositi ...


3
Eugene Fitzgerald
Mayank T Bulsara, Eugene A Fitzgerald: Strained-silicon diffused metal oxide semiconductor field effect transistors. Samuels Gauthier & Stevens, March 14, 2002: US20020030227-A1 (2 worldwide citation)

A DMOS field effect transistor fabricated from a SiGe heterostructure and a method of fabricating same. The heterostructure includes a strained Si layer on a relaxed, low dislocation density SiGe template. In an exemplary embodiment, the DMOS FET includes a SiGe/Si heterostructure on top of a bulk S ...


4
Eugene Fitzgerald
Eugene A Fitzgerald: Buried channel strained silicon FET using a supply layer created through ion implantation. Samuels Gauthier & Stevens, March 14, 2002: US20020030203-A1

A buried channel FET including a substrate, a relaxed SiGe layer, a channel layer, a SiGe cap layer, and an ion implanted dopant supply. The ion implanted dopant supply can be in either the SiGe cap layer or the relaxed SiGe layer. In one embodiment the FET is a MOSFET. In another embodiment the FET ...


5
Benjamin Nigel, Ormerod Anthony: Treatment of drug resistant organisms with nitric oxide. Aberdeen University, Benjamin Nigel, Ormerod Anthony, LORD Hilton David, March 14, 2002: WO/2002/020026 (7 worldwide citation)

The products of the acidification of nitrite are useful to control multiply drug resistant bacteria, such as methicillin resistant $i(S. aureurs).


6
Kang Hui Chun, Kim Hyeon Su: Reflective optical wavelength multiplexer. Samsung Electronics, March 14, 2002: KR1020000053028 (7 worldwide citation)

PURPOSE: A reflective optical wavelength multiplexer is provided to improve a loss feature and a cross talk feature in a wavelength division multiplexing system. CONSTITUTION: A waveguide(W) receives or outputs optical signals having different wavelengths. A star coupler(S) separates the optical pow ...


7
Kanda Yuuichi, Oomori Yasuo: Display window having voice input/output function. Applied Electronics Laboratories, Kanda Yuuichi, Oomori Yasuo, SONODA Yoshitaka, March 14, 2002: WO/2002/021881 (6 worldwide citation)

An apparatus, e.g. a portable telephone, has a display screen provided with a function of microphone and speaker so that the front face of the apparatus can be used widely as the display screen. The display window comprises a light transmitting diaphragm, a member for supporting the diaphragm, a pie ...


8
Thomas D Yager, Paul Waterhouse, Alexandre M Izmailov, Bruno C Maruzzo, John K Stevens, Marina T Larson: Micro-electrophoresis chip for moving and separating nucleic acids and other charged molecules. Oppedahl And Larson, March 14, 2002: US20020029969-A1 (5 worldwide citation)

A microelectrophoresis chip comprises a substrate in which there are formed one or more channels, one channel for each sample to be evaluated. The channels extend for the length of the chip, a distance of generally around 1 cm, and are about 1 to 10 m wide and 1 to 10 m in depth. The channels are fi ...


9
Salman Akram: Multiple die stack apparatus employing T-shaped interposer elements. Trask Britt, March 14, 2002: US20020030262-A1 (4 worldwide citation)

Multiple integrated circuit devices in a stacked configuration that uses a spacing element for allowing increased device density and increased thermal conduction or heat removal for semiconductor devices and the methods for the stacking thereof.


10
Salman Akram: Multiple die stack apparatus employing T-shaped interposer elements. Trask Britt, March 14, 2002: US20020030263-A1 (4 worldwide citation)

Multiple integrated circuit devices in a stacked configuration that uses a spacing element for allowing increased device density and increased thermal conduction or heat removal for semiconductor devices and the methods for the stacking thereof.