1
Belgacem Haba Belgacem (Bel) Haba
Belgacem Haba, Irina Poukhova, Masud Beroz: Selective removal of dielectric materials and plating process using same. Lerner David Littenberg Krumholz & Mentlik, January 31, 2002: US20020011421-A1

A metal is provided on a polymeric component and the component is subjected to a removal process such as plasma or liquid etching in the presence of an electric field. The etchant selectively attacks the polymer at the boundary between the metal and the polymer, thereby forming gaps alongside the me ...


2
Katherina Babich
Marie Angelopoulos, Katherina Babich, Alfred Grill, Scott David Halle, Arpan Pravin Mahorowala, Vishnubhai Vitthalbhai Patel: Tunable vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and applications thereof. Dr Daniel P Morris Esq, IBM Corporation, January 31, 2002: US20020012876-A1

A lithographic structure and method of fabrication and use thereof having a plurality of layers at least one of which is a an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and ...


3
David Sherrer
Dan A Steinberg, Mindaugas F Dautartas, David W Sherrer: Method of fabricating optical filters. Jones Volentine, January 31, 2002: US20020012172-A1

A method of fabricating optical filter is disclosed. The method includes providing the substrate and selectively etching the substrate to form a plurality of freestanding layers. A plurality of dielectric layers is disposed over an outer surface of each of the freestanding layers. The resultant opti ...


4
David Sherrer
Dan A Steinberg, David W Sherrer: Multi-level optical structure and method of manufacture. Jones Volentine, January 31, 2002: US20020012885-A1

A multi-level optical device includes a substrate having a baseline level. At least one feature is disposed at a level above the baseline level. At least one feature is disposed at a level below the baseline level, or in the feature above the baseline level is located at a distance apart from the fe ...


5
Craig Allen
Desaraju V Varaprasad, Mingtang Zhao, Craig Allen Dornan, Anoop Agrawal, Pierre Marc Allemand, Niall R Lynam: Electrochromic polymeric solid films, manufacturing electrochromic devices using such solid films, and processes for making such solid films and devices. Fitzpatrick Cella Harper & Scinto, January 31, 2002: US20020012156-A1

The present invention relates to electrochromic polymeric solid films, manufacturing electrochromic devices using such solid films and processes for making such solid films and devices. The electrochromic polymeric solid films of the present invention exhibit beneficial properties and characteristic ...


6
Kitada Takaharu: Non-contact information exchange card. Sony, January 31, 2002: JP2002-032731 (78 worldwide citation)

PROBLEM TO BE SOLVED: To provide a non-contact information exchanging device which can discriminatingly and securely use plural functions displayed by plural semiconductor devices without operating a semiconductor device controlling other antennas which should not receive electromagnetic waves altho ...


7
Tamura Kenichi, Unobayashi Shinsuke: Coupling device and image forming device having the same. Canon, January 31, 2002: JP2002-031153 (46 worldwide citation)

PROBLEM TO BE SOLVED: To provide a coupling device and an image forming device having the coupling device which can be intercoupled without the occurrence of offcentering.SOLUTION: One coupling 204 of a coupling 203 on the drive side and the coupling 204 on the driven side is so coupled with the oth ...


8
Hirose Kenji, Ajioka Tomoki, Hoshi Satoshi: Semiconductor integrated circuit device. Hitachi, January 31, 2002: JP2002-033457 (42 worldwide citation)

PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device in which transmission of clock is quickened while reducing skew between the clocks.SOLUTION: In a semiconductor integrated circuit device comprising a logic block including a logic circuit operating by receiving a clock forme ...


9
Yamazaki Shunpei, Takayama Toru: Method for fabricating semiconductor device. Semiconductor Energy Lab, January 31, 2002: JP2002-033464 (35 worldwide citation)

PROBLEM TO BE SOLVED: To provide a technology for fabricating a high performance opto electronic device using a plastic support.SOLUTION: A first fixed substrate 101 and an element forming substrate 103 of resin are stuck through a first adhesion layer and then a semiconductor element and a light em ...


10
Fukunaga Kenji: Light emitting device and manufacturing method thereof. Semiconductor Energy Lab, January 31, 2002: JP2002-033198 (33 worldwide citation)

PROBLEM TO BE SOLVED: To provide a bright light emitting device with good image quality.SOLUTION: An EL element 105 consisting of an electrode 102 containing a reflecting surface, an organic EL layer 103 and a transparent electrode 104 is provided on an insulator 101, and an auxiliary electrode 107 ...