21
Takamura Masashi: Zoom lens device. Fuji Photo Film, June 30, 1998: JP1998-177131

PROBLEM TO BE SOLVED: To safely and compactly execute the wiring of a flexible substrate. SOLUTION: The zoom lens device consists of a fixed cylinder 23, an intermediate cylinder 24 helicoidally coupled with the cylinder 23, a movable cylinder 25 helicoidally coupled with the cylinder 24, and a stra ...


22
Mitsumata Hiroshi: Fire-retardant precious wood decorative sheet and panel. Hokusan, June 30, 1998: JP1998-175274

PROBLEM TO BE SOLVED: To impart high fire retardancy and to prevent the lowering of bonding force, the generation of corrosion or the reduction of flexibility by forming first and second adhesive resin layers from a resin layer composed of a resin selected from an ethylene/acrylic acid copolymer and ...


23
Sasaki Yasushi, Hashimoto Kimikatsu, Minegishi Teruhiko, Yoshida Tatsuya, Koni Mitsuru, Isozaki Norihiro: Electronic control throttle valve device for internal combustion engine. Hitachi, Hitachi Car Eng, June 30, 1998: JP1998-176553

PROBLEM TO BE SOLVED: To miniaturize the whole device by arranging a motor on one side and a throttle valve on the other side in a U-shape via a gear, and connecting a throttle position sensor to a throttle valve shaft on the gear side of the throttle valve shaft. SOLUTION: An electromagnetic clutch ...


24
Nakano Harumi, Tsukamoto Akihiro: Electronic still camera. Casio Comput, June 30, 1998: JP1998-178580

PROBLEM TO BE SOLVED: To provide an electronic still camera in which a shutter opportunity is surely acquired. SOLUTION: When a photographer touches its finger lightly onto a shutter button 15, a shutter 12 is operated for every 1/60sec to start image pickup operation and a picked-up image is sequen ...


25
Wada Sadamitsu: Cd-wo device. Kenwood, June 30, 1998: JP1998-177761

PROBLEM TO BE SOLVED: To quickly enable discriminating kinds of disk by discriminating existence of an EFM signal by judging whether a total reflecting state is continued by the number of the prescribed frame or not. SOLUTION: This CD/WO (write once) device is provided with a microcomputer controlli ...


26
Nakamura Shinichi, Saito Masashi, Sakuraba Yoshifumi, Sasaki Yasushi: Batch processor for many health examination data. Fujitsu, June 30, 1998: JP1998-177611

PROBLEM TO BE SOLVED: To speedily and exactly input the result data of many examined persons through simple operation by simultaneously registering the result data corresponding to examination item codes for every examined person and preserv ing these data in a file. SOLUTION: A result data input pi ...


27
Ishimatsu Koichi, Soga Akira: Disk loading device. Sony, June 30, 1998: JP1998-177757

PROBLEM TO BE SOLVED: To manually eject a disk when a motor fails or at the time of power failure or when motor driving is impossible because of the failure of a disk transfer body transfer mechanism. SOLUTION: This device comprises a disk transfer body 11 moved so as to be freely pulled out from a ...


28
Miyamoto Jiichi, Harigai Ikuhiro, Sugiyama Hisataka: Information recording medium having recording area discrimination information. Hitachi, June 30, 1998: JP1998-177723

PROBLEM TO BE SOLVED: To allocate discrimination information independent of respective recording areas while sharing one discrimination information with two tracks. SOLUTION: Respective tracks 3, 4 divided at every recording unit arranged radially in the radial direction, and the discrimination info ...


29
Nakada Yoshiro, Miyanaga Isao, Hashimoto Shin, Uraoka Yukiharu, Okuda Yasushi: Probe card. Matsushita Electric, June 30, 1998: JP1998-178074

PROBLEM TO BE SOLVED: To ensure a reliable contact of a bump with the inspection terminal of a semiconductor wafer even on the circumferential fringe part thereof at the time of burn-in screening. SOLUTION: A wiring board 153 comprises a first terminal formed on one major surface thereof and a wirin ...


30
Oka Hideaki: Manufacture of semiconductor device. Seiko Epson, June 30, 1998: JP1998-177955

PROBLEM TO BE SOLVED: To form a polycrystalline silicon which is large in grain diameter and high in crystallinity by a method wherein a semiconductor layer mainly formed of silicon is formed on an insulating amorphous material and heated up to a prescribed heat treatment temperature in a certain ti ...