1
Ostap E Baran, Andrij O D Baran: Multiple surgical cuff. S C Yuter, January 3, 1984: US04423725 (417 worldwide citation)

A multiple surgical cuff for introduction into a body passage such as a trachea, bladder and urethra opening or artery comprising a tubular base member encircled by proximal, distal and middle double cuff members. The middle double cuff member comprises an inflatable tubular inner cuff member encirc ...


2
Martin E Hellman, Stephen C Pohlig: Exponentiation cryptographic apparatus and method. Board of Trustees of the Leland Stanford Junior University, Flehr Hohbach Test Albritton & Herbert, January 3, 1984: US04424414 (322 worldwide citation)

A cryptographic system transmits a computationally secure cryptogram that is generated from a secret transformation of the message sent by the authorized transmitter; the cryptogram is again transformed by the authorized receiver using a secret reciprocal transformation to reproduce the message sent ...


3
Donald G Wallace, Susan B Wade: Collagen implant material and method for augmenting soft tissue. Collagen Corporation, Ciotti & Murashige, January 3, 1984: US04424208 (271 worldwide citation)

An injectable implant material for soft tissue augmentation comprising a dispersion of (a) particles of cross-linked atelopeptide collagen; and (b) reconstituted fibrous atelopeptide collagen in a (c) physiological aqueous carrier. Implants of this material have improved persistence relative to curr ...


4
Thomas R Mazzocco: Packaging system for intraocular lens structures. Staar Surgical Company, Frank Frisenda Jr, January 3, 1984: US04423809 (195 worldwide citation)

The invention provides an improved autoclavable system for packaging of intraocular lens structures. In one embodied form, the inventive system comprises an outer container having at least two optically clear windows arranged in parallel relationship, an inner holding fixture mounted within the oute ...


5
David W Best: Apparatus and method for providing a logical exclusive OR/exclusive NOR function. Rockwell International Corporation, Bruce C Lutz, Howard R Greenberg, H Fredrick Hamann, January 3, 1984: US04424460 (187 worldwide citation)

Circuits are illustrated using CMOS design techniques for incorporating N and P channel transistors into a circuit to obtain the functions of exclusive OR and exclusive NOR signal generation. This is accomplished by utilizing a given logic value signal as a control signal to pass the other input sig ...


6
Robert A Stevenson, Albert W Dey: Highly-reliable feed through/filter capacitor and method for making same. U S Capacitor Corporation, Christie Parker & Hale, January 3, 1984: US04424551 (163 worldwide citation)

A method of making a capacitor from a canister having first and second mutually insulated electrically conductive interior surfaces, an open end, and an insulative end surface opposite the open end, and from a capacitive structure having a plurality of pairs of spaced apart electrically conductive p ...


7
Ronald E Bobbett, J Byron McCormick, William J Kerwin: Automatic voltage imbalance detector. The United States of America represented by the United States Department of Energy, Paul D Gaetjens, Leonard C Brenner, Richard G Besha, January 3, 1984: US04424491 (151 worldwide citation)

A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provi ...


8
Hugh A House: Wet-dry syringe. Martin Sachs, January 3, 1984: US04424057 (138 worldwide citation)

A wet-dry syringe for combining and mixing a liquid and a solid medicament or at least two dissimilar liquid medicaments prior to the application thereof to a patient includes a first vial having liquid or solid medicament disposed between a pair of identical vial seals. A second vial functions as a ...


9
Takashi Mimura: High electron mobility single heterojunction semiconductor devices. Fujitsu, Staas & Halsey, January 3, 1984: US04424525 (124 worldwide citation)

A thin electron accumulation layer is generated along a heterojunction between two kinds of semiconductors each of which has a different electron affinity. This electron accumulation layer suffers less ionized-impurity scattering, because the thickness does not exceed the spread of an electron wave. ...


10
Paul A Farrar, Robert M Geffken, Charles T Kroll: Method for forming dense multilevel interconnection metallurgy for semiconductor devices. International Business Machines Corporation, Howard J Walter Jr, January 3, 1984: US04423547 (123 worldwide citation)

A method for providing high density multiple level metallurgy for integrated circuit devices in which a relatively thin layer of plasma produced silicon nitride is deposited over a first level of interconnection metallurgy formed on a layer of silicon oxide. Overlap via holes are etched in the nitri ...



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