1
Dieter Joos Steven Terryn
Steven Terryn, Dieter Joos: Bandwidth calibration of active filter. STMicroelectronics Belgium, Lisa K Jorgenson, James H Morris, Wolf Greenfield & Sacks P C, April 6, 2010: US07692484 (3 worldwide citation)

An active RC filter has an op-amp and a biasing circuit arranged to bias the op-amp to set a gain bandwidth product of the op-amp according to a desired pole frequency of the filter. The biasing circuit is operable according to an output of an RC calibration circuit. The op-amp can be an OTA transco ...


2
James Kraemer Ph.D.
Robert Lee Angell, Robert R Friedlander, James R Kraemer: Generating predilection cohorts. Nuance Communications, Wolf Greenfield & Sacks P C, February 14, 2012: US08117144 (12 worldwide citation)

A computer implemented method, apparatus, and computer program product for generating risk scores for specific risk cohorts. Digital sensor data associated with a specific risk cohort is received from a set of multimodal sensors. The specific risk cohort includes a set of identified cohort members. ...


3
Peter A. Bouchard
Jeffrey Phillips, David Allen, Brett Serkez, Peter Bouchard: Method and apparatus for managing information related to storage activities of data storage systems. EMC Corporation, Wolf Greenfield & Sacks P C, March 18, 2008: US07346636 (4 worldwide citation)

Methods and apparatus for managing information related to backup storage activities of data storage systems. In a computer system having one or more independent backup data storage systems coupled to each other and each serving one or more clients, a user may obtain information related to backup act ...


4
Dieter Joos
Dieter Joos, Marc Borremans: Differential low noise amplifier with low power consumption. STMicroelectronics, Lisa K Jorgenson, James H Morris, Wolf Greenfield & Sacks P C, February 13, 2007: US07176759 (3 worldwide citation)

A low noise differential amplifier has a pair of single ended common-gate or common-base circuits and cross coupling of an input of one of the pair to the gate or base of the other one of the pair. This cross-coupling puts the differential input voltage over the Gate-Source of the common-gate transi ...


5
Eugene Fitzgerald
Eugene A Fitzgerald: Monolithically integrated light emitting devices. Massachusetts Institute of Technology, Wolf Greenfield & Sacks P C, May 19, 2009: US07535089 (65 worldwide citation)

Methods and structures for monolithically integrating monocrystalline silicon and monocrystalline non-silicon materials and devices are provided. In one structure, a monolithically integrated semiconductor device structure comprises a silicon substrate and a first monocrystalline semiconductor layer ...


6
Eugene Fitzgerald
Eugene A Fitzgerald, Arthur J Pitera: Strained gettering layers for semiconductor processes. Massachusetts Institute of Technology, Wolf Greenfield & Sacks P C, April 10, 2007: US07202124 (43 worldwide citation)

A method and structure for forming semiconductor structures using tensilely strained gettering layers. The method includes forming a donor wafer comprising a tensilely strained gettering layer disposed over a substrate, and at least one material layer disposed over the tensilely strained gettering l ...


7
Eugene Fitzgerald
Eugene A Fitzgerald: Monolithically integrated silicon and III-V electronics. Massachusetts Institute of Technology, Wolf Greenfield & Sacks P C, February 21, 2012: US08120060 (9 worldwide citation)

Methods and structures for monolithically integrating monocrystalline silicon and monocrystalline non-silicon materials and devices are provided. In one structure, a monolithically integrated semiconductor device structure comprises a silicon substrate and a first monocrystalline semiconductor layer ...


8
Eugene Fitzgerald
Carl Dohrman, Saurabh Gupta, Eugene A Fitzgerald: Electro-absorption modulator device and methods for fabricating the same. Massachusetts Institute of Technology, Wolf Greenfield & Sacks P C, February 20, 2007: US07180648 (8 worldwide citation)

An electro-absorption light intensity modulator device is provided that comprises a first and a second layer disposed relative to the first layer so as to provide a light-absorbing optical confinement region. The first layer comprises a first insulator layer, and the light-absorbing optical confinem ...


9
Eugene Fitzgerald
Michael J Mori, Eugene A Fitzgerald: Semiconductor light-emitting structure and graded-composition substrate providing yellow-green light emission. Massachusetts Institute of Technology, Wolf Greenfield & Sacks P C, November 22, 2011: US08063397 (7 worldwide citation)

Semiconductor light-emitting structures are shown on engineered substrates having a graded composition. The composition of the substrate may be graded to achieve a lattice constant on which a yellow-green light-emitting semiconductor material may be disposed. In some embodiments, the structure may b ...


10
Eugene Fitzgerald
Saurabh Gupta, Minjoo Larry Lee, Eugene A Fitzgerald: Strained tri-channel layer for semiconductor-based electronic devices. Massachusetts Institute of Technology, Wolf Greenfield & Sacks P C, September 7, 2010: US07791107 (5 worldwide citation)

A semiconductor-based structure includes a substrate layer, a compressively strained semiconductor layer adjacent to the substrate layer to provide a channel for a component, and a tensilely strained semiconductor layer disposed between the substrate layer and the compressively strained semiconducto ...



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