1
Stanford R Ovshinsky, Arun Madan: Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process. Energy Conversion Devices, Wallenstein Spangenberg Hattis & Strampel, October 7, 1980: US04226898 (272 worldwide citation)

A method of making an amorphous semiconductor film or the like having desirable photoconductive and/or other properties comprises depositing on a substrate a solid amorphous semiconductor film including at least one element, by glow discharge decomposition of a compound containing said at least one ...


2
Stanford R Ovshinsky: High temperature amorphous semiconductor member and method of making the same. Energy Conversion Devices, Wallenstein Spangenberg Hattis & Strampel, December 4, 1979: US04177474 (209 worldwide citation)

An amorphous semiconductor member which is capable of withstanding high temperatures and of having good toughness characteristics comprises an amorphous semiconductor material including a composition of a plurality elements, at least one of which is a low atomic weight element comprising boron, carb ...


3
Stanford R Ovshinsky: Method and apparatus for recording information. Energy Conversion Devices, Wallenstein Spangenberg Hattis & Strampel, September 28, 1976: US03983542 (182 worldwide citation)

The method and apparatus for recording information includes a layer of memory material which normally has one structural condition having one detectable characteristic, which is capable of having portions thereof physically changed to another structural condition having another detectable characteri ...


4
Stanford R Ovshinsky, Masatsugu Izu: Amorphous semiconductors equivalent to crystalline semiconductors. Energy Conversion Devices, Wallenstein Spangenberg Hattis & Strampel, August 12, 1980: US04217374 (176 worldwide citation)

A method of making an amorphous semiconductor film or the like having desirable photoconductive and/or other properties comprises forming an amorphous semiconductor film, preferably by vaporizing silicon or the like in an evacuated space and condensing the same on a substrate in such space, and pref ...


5
Harvey H Wacks, Peter H Klose, Stanford R Ovshinsky, Robert W Hallman: Dry process production of archival microform records from hard copy. Energy Conversion Devices, Wallenstein Spangenberg Hattis & Strampel, June 29, 1976: US03966317 (171 worldwide citation)

A dry-process method and apparatus for producing archival microform records from light reflecting hard copy utilize a dry-process mask film strip which is photosensitive to and microimaged by light reflected and reduced or condensed from the hard copy and developed by heat to provide microimaged tra ...


6
Stanford R Ovshinsky: Recording and retrieving information in an amorphous memory material using a catalytic material. Energy Conversion Devices, Wallenstein Spangenberg Hattis & Strampel, October 26, 1976: US03988720 (169 worldwide citation)

The method and apparatus for recording and retrieving information includes a layer of memory material which normally has one structural condition having one detectable characteristic, which is capable of having portions thereof physically changed to another structural condition having another detect ...


7
Robert W Hallman, Stanford R Ovshinsky, John P de Neufville: Method for full format imaging. Energy Conversion Devices, Wallenstein Spangenberg Hattis & Strampel, May 12, 1981: US04267261 (165 worldwide citation)

In a method for full format imaging, a solid continuous film of a dispersion imaging material is provided on a substrate and it disperses into a discontinuous film comprising space globules and free space therebetween through which free space light can pass where it is subjected to a short pulse of ...


8
Buckley William D: Filament-type memory semiconductor device and method of making the same. Energy Conversion Devices, Wallenstein Spangenberg Hattis & Strampel, May 27, 1975: US3886577 (112 worldwide citation)

An improved memory device to be used in a D.C. curcuit which device includes a pair of spaced electrodes between which extends a body of a generally amorphous high resistance memory semiconductor material made of a composition of at least two elements and wherein the application to the electrodes of ...


9
Schmitt William H: Non-pressurized package containing self-heating products. Alberto Culver Company, Wallenstein Spangenberg Hattis & Strampel, February 18, 1975: US3866800 (109 worldwide citation)

A non-pressurized package containing a product, especially a cosmetic product selected from the class consisting of those to be applied to skin and hair, said product comprising two separate compositions which are adapted to be mixed together to form a final heated composition which is dispensed fro ...


10
Conrad W Kamienski, Robert C Morrison: Preparation of hydroxy-terminated conjugated diene polymers. Lithium Corporation of America, Wallenstein Spangenberg Hattis & Strampel, August 2, 1977: US04039593 (109 worldwide citation)

Preparation of hydroxy-terminated conjugated diene polymers, particularly polybutadienes, by capping of organodilithium- and organopolylithium- terminated conjugated diene polymers or polybutadienes with lower alkylene oxide or epoxide capping agents in the presence of certain potentiating agents or ...