1
Bahman Qawami
Alan Chiou, Bahman Qawami, Farshid Sabet sharghi: Extender strip and test assembly for testing memory card operation. SanDisk Corporation, Vierra Magen Marcus & DeNiro, March 9, 2010: US07676714 (1 worldwide citation)

A system and method are disclosed for testing operation of a memory card within an electronic host device. The system includes a flat flexible cable, or strip, for electrically coupling between the memory card slot in a host device and a test assembly. The test assembly may have a card slot for acce ...


2
Bahman Qawami
Alan Chiou, Bahman Qawami, Farshid Sabet sharghi: Method of testing memory card operation. SanDisk Corporation, Vierra Magen Marcus & DeNiro, March 23, 2010: US07685478 (1 worldwide citation)

A system and method are disclosed for testing operation of a memory card within an electronic host device. The system includes a flat flexible cable, or strip, for electrically coupling between the memory card slot in a host device and a test assembly. The test assembly may have a card slot for acce ...


3
Jian Chen: Compensating for coupling during read operations of non-volatile memory. Sandisk Corporation, Vierra Magen Marcus & DeNiro, March 27, 2007: US07196928 (317 worldwide citation)

Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pr ...


4
Yan Li, Jian Chen: Read operation for non-volatile storage that includes compensation for coupling. Sandisk Corporation, Vierra Magen Marcus & DeNiro, March 6, 2007: US07187585 (192 worldwide citation)

Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pr ...


5
S Brad Herner: Memory cell comprising a semiconductor junction diode crystallized adjacent to a silicide. Sandisk 3D, Vierra Magen Marcus & DeNiro, February 13, 2007: US07176064 (174 worldwide citation)

A memory cell is formed of a semiconductor junction diode in series with an antifuse. The cell is programmed by rupture of the antifuse. The semiconductor junction diode comprises silicon, the silicon crystallized in contact with a silicide. The suicide apparently provides a template for crystalliza ...


6
Dana Lee, Emilio Yero: Reducing the impact of interference during programming. SanDisk Corporation, Vierra Magen Marcus & DeNiro, January 11, 2011: US07869273 (163 worldwide citation)

A system for programming non-volatile storage is proposed that reduces the impact of interference from the boosting of neighbors. Memory cells are divided into two or more groups. In one example, the memory cells are divided into odd and even memory cells; however, other groupings can also be used. ...


7
Daniel C Guterman, Stephen J Gross, Shahzad Khalid, Geoffrey S Gongwer: Tracking cells for a memory system. Sandisk Corporation, Vierra Magen Marcus & DeNiro, June 26, 2007: US07237074 (155 worldwide citation)

Tracking cells are used in a memory system to improve the read process. The tracking cells can provide an indication of the quality of the data and can be used as part of a data recovery operation if there is an error. The tracking cells provide a means to adjust the read parameters to optimum level ...


8
Jian Chen, Jeffrey W Lutze, Yan Li, Daniel C Guterman, Tomoharu Tanaka: Behavior based programming of non-volatile memory. Sandisk Corporation, Vierra Magen Marcus & DeNiro, February 13, 2007: US07177199 (137 worldwide citation)

The process for programming a set of memory cells is improved by adapting the programming process based on behavior of the memory cells. For example, a set of program pulses is applied to the word line for a set of flash memory cells. A determination is made as to which memory cells are easier to pr ...


9
Jian Chen, Raul Adrian Cernea, Gerrit Jan Hemink: Compensating for coupling in non-volatile storage. Sandisk Corporation, Vierra Magen Marcus & DeNiro, March 27, 2007: US07196946 (135 worldwide citation)

Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pr ...


10
Jian Chen, Lee Merrill Gavens: Operating non-volatile memory without read disturb limitations. Sandisk Corporation, Vierra Magen Marcus & DeNiro, February 13, 2007: US07177977 (132 worldwide citation)

When reading a memory cell on a NAND string, the word lines for the memory cells not being read will receive a voltage so that those memory cells operate as pass gates. Over time, if there are a lot of read operations without any program operations, the cells not being read may suffer from Read Dist ...