1
Salvador P Umotoy, Lawrence C Lei, Anh N Nguyen, Steve H Chiao: Dual gas faceplate for a showerhead in a semiconductor wafer processing system. Applied Materials, Thomason Moser & Patterson, July 11, 2000: US06086677 (329 worldwide citation)

A faceplate for a showerhead of a semiconductor wafer processing system having a plurality of gas passageways to provide a plurality of gases to the process region without commingling those gases before they reach the process region within a reaction chamber. The showerhead contains faceplate and a ...


2
Chrostopher W B Goode, Tobie J LaRocca: System for interactively distributing information services. Diva Systems Corporation, Thomason Moser & Patterson, December 26, 2000: US06166730 (286 worldwide citation)

In an interactive information distribution system that utilizes open sessions to provide requested information to users, a method for sharing the use of open sessions between a plurality of set top terminals associated with a common account number or user.


3
Robin Cheung, Ashok Sinha, Avi Tepman, Dan Carl: Apparatus for electro-chemical deposition with thermal anneal chamber. Applied Materials, Thomason Moser & Patterson, October 24, 2000: US06136163 (282 worldwide citation)

The present invention generally provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs rules and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The elec ...


4
Salvador P Umotoy, Lawrence C Lei, Anh N Nguyen, Steve H Chiao: One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system. Applied Materials, Thomason Moser & Patterson, October 16, 2001: US06302964 (259 worldwide citation)

A one-piece gas distribution faceplate for a showerhead. The one-piece gas distribution faceplate includes a first surface, a second surface, and a third surface. The one-piece gas distribution faceplate comprises a plurality of first gas holes extending through the one-piece gas distribution facepl ...


5
Donald Gordon, Christopher Goode, Philip A Thomas, Mark D Conover, Brooks Cole: Method and apparatus for providing a menu structure for an interactive information distribution system. Diva Systems Corporation, Thomason Moser & Patterson, March 27, 2001: US06208335 (250 worldwide citation)

A method and apparatus for providing an interactive menu structure within an interactive information distribution system. The menu structure is embodied in a combination of software, which provides a so-called navigator and a set top terminal that provides certain functionality for the navigator and ...


6
Wai Fan Yau, David Cheung, Shin Puu Jeng, Kuowei Liu, Yung Cheng Yu: Low power method of depositing a low k dielectric with organo silane. Applied Materials, Thomason Moser & Patterson, June 6, 2000: US06072227 (247 worldwide citation)

A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas at a low RF power level from 20-200 W. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. ...


7
Wai Fan Yau, David Cheung, Shin Puu Jeng, Kuowei Liu, Yung Cheng Yu: Method of depositing a low k dielectric with organo silane. Applied Materials, Thomason Moser & Patterson, April 25, 2000: US06054379 (239 worldwide citation)

A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can a ...


8
Yezdi Dordi, Joe Stevens, Roy Edwards, Bob Lowrance, Michael Sugarman, Mark Denome: Electro-chemical deposition cell for face-up processing of single semiconductor substrates. Applied Materials, Thomason Moser & Patterson, July 9, 2002: US06416647 (220 worldwide citation)

The invention provides an electro-chemical deposition cell for face-up processing of semiconductor substrates comprising a substrate support member, a cathode connected to the substrate plating surface, an anode disposed above the substrate support member and an electroplating solution inlet supplyi ...


9
Sasson Somekh: Etch stop layer for dual damascene process. Applied Materials, Thomason Moser & Patterson, September 18, 2001: US06291334 (213 worldwide citation)

The present invention provides a carbon based etch stop, such as a diamond like amorphous carbon, having a low dielectric constant and a method of forming a dual damascene structure. The low k etch stop is preferably deposited between two dielectric layers and patterned to define the underlying inte ...


10
Yezdi Dordi, Donald J Olgado, Ratson Morad, Peter Hey, Mark Denome, Michael Sugarman, Mark Lloyd, Joseph Stevens, Dan Marohl, Ho Seon Shin, Eugene Ravinovich, Robin Cheung, Ashok K Sinha, Avi Tepman, Dan Carl, George Birkmaier: Electro-chemical deposition system. Applied Materials, Thomason Moser & Patterson L, July 10, 2001: US06258220 (203 worldwide citation)

The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical dep ...