1
Dr. Jill S. Becker
Douwe J Monsma, Jill S Becker: Vapor deposition systems and methods. Cambridge NanoTech, The Marbury Law Group PLLC, June 19, 2012: US08202575 (7 worldwide citation)

Vapor deposition systems and methods associated with the same are provided. The systems may be designed to include features that can promote high quality deposition; simplify manufacture, modification and use; as well as, reduce the footprint of the system, amongst other advantages.


2
Johann Alsmeier, Vinod Robert Purayath, Henry Chien, George Matamis, Yao Sheng Lee, James Kai, Yuan Zhang: Ultrahigh density vertical NAND memory device and method of making thereof. SanDisk Technologies, The Marbury Law Group PLLC, May 29, 2012: US08187936 (182 worldwide citation)

A method of making a monolithic three dimensional NAND string. The method includes forming a stack of alternating layers of a first material and a second material over a substrate. The first material includes a conductive or semiconductor control gate material and the second material includes an ins ...


3
Nima Mokhlesi, Roy Scheuerlein: Three dimensional NAND memory. SanDisk 3D, The Marbury Law Group PLLC, December 14, 2010: US07851851 (173 worldwide citation)

A monolithic, three dimensional NAND string includes a first memory cell located over a second memory cell. A semiconductor active region of the first memory cell is formed epitaxially on a semiconductor active region of the second memory cell, such that a defined boundary exists between the semicon ...


4
Nima Mokhlesi, Roy Scheuerlein: Three dimensional NAND memory. SanDisk 3D, The Marbury Law Group PLLC, December 7, 2010: US07848145 (168 worldwide citation)

A monolithic, three dimensional NAND string includes a first memory cell located over a second memory cell, a select transistor, a first word line of the first memory cell, a second word line of the second memory cell, a bit line, a source line, and a select gate line of the select transistor. The f ...


5
Nima Mokhlesi, Roy Scheuerlein: Method of making three dimensional NAND memory. SanDisk 3D, The Marbury Law Group PLLC, October 5, 2010: US07808038 (167 worldwide citation)

A monolithic, three dimensional NAND string includes a first memory cell located over a second memory cell. A semiconductor active region of the first memory cell is a first pillar having a square or rectangular cross section when viewed from above, the first pillar being a first conductivity type s ...


6
Johann Alsmeier, George Samachisa: Ultrahigh density monolithic, three dimensional vertical NAND memory device. SanDisk Technologies, The Marbury Law Group PLLC, January 8, 2013: US08349681 (118 worldwide citation)

Monolithic, three dimensional NAND strings include a semiconductor channel, at least one end portion of the semiconductor channel extending substantially perpendicular to a major surface of a substrate, a plurality of control gate electrodes having a strip shape extending substantially parallel to t ...


7
Metod Lebar: Hybrid central/distributed VOD system with tiered content structure. Time Warner Cable a division of Time Warner Entertainment Company, The Marbury Law Group PLLC, March 30, 2010: US07690020 (94 worldwide citation)

The present invention provides a hybrid central/distributed and tiered video on demand (VOD) service network with tiered content structure. In particular, the present invention uses media servers located in both the headend station and the hub stations. Set-top boxes generally would be supplied VOD ...


8
Johann Alsmeier: Ultrahigh density vertical NAND memory device and method of making thereof. SanDisk Technologies, The Marbury Law Group PLLC, June 5, 2012: US08193054 (88 worldwide citation)

A method of making a monolithic three dimensional NAND string, includes forming a stack of alternating layers of a first material and a second material different from the first material over a substrate, etching the stack to form at least one opening in the stack, forming a discrete charge storage m ...


9
Johann Alsmeier: Ultrahigh density vertical NAND memory device. SanDisk Technologies, The Marbury Law Group PLLC, June 12, 2012: US08198672 (84 worldwide citation)

Monolithic, three dimensional NAND strings include a semiconductor channel, at least one end portion of the semiconductor channel extending substantially perpendicular to a major surface of a substrate, a plurality of control gate electrodes having a strip shape extending substantially parallel to t ...


10
S Brad Herner, Abhijit Bandyopadhyay: Highly scalable thin film transistor. SanDisk 3D, The Marbury Law Group PLLC, February 15, 2011: US07888205 (79 worldwide citation)

Shrinking the dimensions of PMOS or NMOS thin film transistors is limited by dopant diffusion. In these devices an undoped or lightly doped channel region is interposed between heavily doped source and drain regions. When the device is built with very short gate length, source and drain dopants will ...



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