1
Donald R Barbour, Guido A Lemke, Steven Magdo: High performance semiconductor package assembly. International Business Machines, Stoffel Wolmar J, March 30, 1982: US04322778 (187 worldwide citation)

An improved high performance semiconductor package assembly for interconnecting a plurality of integrated circuit devices having a multilayer substrate with internal wiring including signal wiring and external signal and power connections, a plurality of integrated circuit semiconductor devices supp ...


2
Pogge H Bernhard, Poponiak Michael R: Method of fabricating semiconductor device embodying dielectric isolation. International Business Machines Corporation, Stoffel Wolmar J, November 11, 1975: US3919060 (57 worldwide citation)

A semiconductor fabrication method for producing dielectrically isolated silicon regions wherein high conductivity regions surrounding device regions to be electrically isolated are produced in a silicon body, the high conductivity regions anodically etched in a solution to selectively produce regio ...


3
Ahn Junghi, Schwartz Bernard, Wilcox David L: Multilayer circuits. International Business Machines Corporation, Stoffel Wolmar J, December 10, 1974: US3852877 (46 worldwide citation)

Multilevel ceramic high conductivity circuit structures are formed by depositing a metallizing media on surfaces of green ceramic sheets, including on walls of holes which extend through the sheets. The metallizing media includes metals and compounds which convert to a metal during firing. The sheet ...


4
Greer Stuart E, Schnitzel Randolph H, Waldman David P: Method for fabricating aluminum interconnection metallurgy system for silicon devices. International Business Machines Corporation, Stoffel Wolmar J, May 6, 1975: US3881971 (39 worldwide citation)

A method of fabricating an improved aluminum metallurgy system of conductive stripes on a monocrystalline silicon semiconductor device that makes electrical contact with the body of the device through at least one opening in an insulating layer, wherein there is formed a blanket layer of aluminum ov ...


5
Poponiak Michael R: Method for gettering contaminants in monocrystalline silicon. International Business Machines Corporation, Stoffel Wolmar J, December 30, 1975: US3929529 (33 worldwide citation)

A method for removing fast diffusing metal contaminants from a monocrystalline silicon body by (1) anodizing at least one side of the body in an aqueous liquid bath under conditions that result in the formation of a porous silicon surface layer, (2) annealing the resultant structure in a non-oxidizi ...


6
Ahn Junghi, Schwartz Bernard, Wilcox David L: Multilayer circuits. International Business Machines Corporation, Stoffel Wolmar J, September 24, 1974: US3838204 (29 worldwide citation)

Multilevel ceramic high conductivity circuit structures are formed by depositing a metallizing media on surfaces of green ceramic sheets, including on walls of holes which extend through the sheets. The metallizing media includes metals and compounds which convert to a metal during firing. The sheet ...


7
Dhaka Vir A, Kozik Andrew F: Interconnection metallurgy system for semiconductor devices. International Business Machines Corporation, Stoffel Wolmar J, July 9, 1974: US3823349 (26 worldwide citation)

Semiconductors having very narrow base widths can be fabricated by using ion implantation through the contact metallization as a mask, then expanding and passivating the metallization by anodization so as to protect the semiconductor junction.Aluminum metallization has predictable expansion characte ...


8
Cass Eugene E, Enichen William A, Havas Janos: Forming a compact multilevel interconnection metallurgy system for semi-conductor devices. International Business Machines Corporation, Stoffel Wolmar J, October 29, 1974: US3844831 (25 worldwide citation)

In this method, the multi-level interconnection metallurgy system is made more compact by eliminating the need for pads normally associated with via connections between the metallurgy layers. The method consists of forming a first dielectric layer on a semiconductor substrate, forming the first inte ...


9
Magdo Ingrid E, Magdo Steven: Method of fabricating integrated circuit device structure with complementary elements utilizing selective thermal oxidation and selective epitaxial deposition. International Business Machines Corporation, Stoffel Wolmar J, January 21, 1975: US3861968 (23 worldwide citation)

A method of fabricating a planar dielectrically isolated semiconductor device by depositing a surface layer of dielectric material on a major surface of a monocrystalline substrate, removing portions of the layer to define annular channels, thermally oxidizing the exposed surface areas thereby formi ...


10
Bochman Raymond A, Dessauer Ralph G, Jen Dian P: Method and apparatus for producing large diameter monocrystals. International Business Machines Corporation, Stoffel Wolmar J, March 19, 1974: US3798007 (22 worldwide citation)

An improved method and apparatus for producing large diameter semiconductor crystals by the Czochralski process wherein a relatively flat temperature profile is maintained within the melt by adding heat to the sides and top of the melt while simultaneously removing heat from the melt through the cry ...