Johannes F M Cillessen, Paulus W M Blom, Ronald M Wolf, Jacobus B Giesbers: Semiconductor device having a transparent switching element. U S Philips Corporation, Steven R Biren, April 28, 1998: US05744864 (2719 worldwide citation)

A semiconductor device includes a transparent switching element (1) with two connection electrodes (2, 3) of a transparent material and an interposed transparent channel region (4) of a semiconductor material provided with a transparent gate electrode (5) of a conductive material, separated from the ...


Samir N Hulyalkar, Chiu Y Ngo: Method and apparatus for reservation-based wireless-ATM local area network. Philips Electronics North America Corporation, Steven R Biren, July 28, 1998: US05787080 (231 worldwide citation)

A reservation-based wireless asynchronous transfer mode (ATM) local area network includes a system architecture of mobile nodes (MNs), each MN for communicating with various ones of the other MNs. A plurality of services is supported wherein each service has respective quality-of-service (QoS) requi ...

Jurriaan Schmitz, Pierre H Woerlee: Si-Ge CMOS semiconductor device. U S Philips Corporation, Steven R Biren, August 7, 2001: US06271551 (218 worldwide citation)

To obtain a high mobility and a suitable threshold voltage in MOS transistors with channel dimensions in the deep sub-micron range, it is desirable to bury a strongly doped layer (or ground plane) in the channel region below a weakly doped intrinsic surface region, a few tens of nm below the surface ...

Ronald M Wolf, Paulus W M Blom, Marcellinus P C M Krijn: Switching element with memory provided with Schottky tunnelling barrier. U S Philips Corporation, Steven R Biren, April 30, 1996: US05512773 (195 worldwide citation)

A switching element is provided with two electrodes (1, 2) with a semiconducting dielectric (3) therebetween, one electrode (2) having a material which forms a Schottky contact with the semiconducting dielectric (3), while a space charge region (3') of the Schottky contact forms a tunnelling barrier ...

Sel Colak: Lateral double-diffused MOS transistor device. North American Philips Corporation, Thomas A Briody, Robert T Mayer, Steven R Biren, November 10, 1981: US04300150 (170 worldwide citation)

A lateral double-diffused MOS transistor includes a field-shaping semiconductor layer which serves to improve the breakdown voltage and/or on-resistance characteristics of the device. The field-shaping layer redistributes the electrical field in the device during operation in order to eliminate elec ...

Jacques Claude Thillays: Display device for use with strong illumination. U S Philips Corporation, Thomas A Briody, Jack Oisher, Steven R Biren, October 14, 1980: US04228490 (144 worldwide citation)

An electroluminescent device includes at least one emissive diode emitting in the red. The emissive face of the diode is covered by a filter element which is substantially transparent in the red, and which has a light transmission coefficient in the blue which is significantly higher than its coeffi ...



Barry M Singer, Rajsekhar Jayaraman: Combined bipolar-field effect transistor resurf devices. North American Philips Corporation, Robert T Mayer, Steven R Biren, January 27, 1987: US04639761 (118 worldwide citation)

A combined bipolar-field effect transistor RESURF device includes a lightly-doped epitaxial buried layer of a first conductivity type located between a semiconductor substrate of the first conductivity type and an epitaxial surface layer of a second conductivity type opposite to that of the first. T ...