1
Michael Farmwald, Mark Horowitz: Memory module having memory devices containing internal device ID registers and method of initializing same. Rambus, Steinberg & Whitt, July 27, 1999: US05928343 (250 worldwide citation)

A method and apparatus for assigning identification values to memories. A master resets identifiers of a first memory and a second memory by sending a reset signal on a line that is coupled in a daisy-chained manner to the first and second memories and also coupled to the master. The master places a ...


2
Young Do Kweon, Kyu Jin Lee, Wan Gyan Choi: Semiconductor device package structure having column leads and a method for production thereof. Samsung Electronics, Jones Volentine Steinberg & Whitt, May 4, 1999: US05900676 (168 worldwide citation)

A semiconductor device package contains column leads which are electrically connected to a chip. The column leads, chip and electrical connection means are encapsulated to form a package body, from which the column leads extend for connection to a substrate such as a printed circuit board. A lead fr ...


3
Michael Farmwald, Mark Horowitz: Synchronous memory device having an internal register. Rambus, Steinberg & Whitt, September 21, 1999: US05954804 (128 worldwide citation)

The present invention is directed to an integrated circuit device having at least one memory section including a plurality of memory cells. The device includes an internal register to store an identification value which identifies the device on a bus. The device further includes interface circuitry, ...


4
Kyucharn Park, Yeseung Lee, Cheonsu Ban, Kyungwook Lee: Dynamic access memory using silicon-on-insulator. Samsung Electronics, Jones Volentine Steinberg & Whitt L, August 17, 1999: US05939745 (123 worldwide citation)

The present invention discloses a method for making a dynamic random access memory by silicon-on-insulator comprising the steps of: dividing a cell area and a peripheral area on a first silicon substrate and recessing just the cell area where a memory device is formed; forming a first insulating lay ...


5
Michael Farmwald, Mark Horowitz: Integrated circuit I/O using a high performance bus interface. Rambus, Neil A Jones Volentine Steinberg & Whitt L Steinberg, June 22, 1999: US05915105 (111 worldwide citation)

The present invention includes a memory subsystem comprising at least two semiconductor devices, including at least one memory device, connected to a bus, where the bus includes a plurality of bus lines for carrying substantially all address, data and control information needed by said memory device ...


6
Michael Farmwald, Mark Horowitz: Synchronous memory device having a programmable register and method of controlling same. Rambus, Steinberg & Whitt, September 14, 1999: US05953263 (110 worldwide citation)

The present invention includes a memory subsystem comprising at least two semiconductor devices, including at least one memory device, connected to a bus, where the bus includes a plurality of bus lines for carrying substantially all address, data and control information needed by said memory device ...


7
Young Jae Song, Se Yong Oh, Tae Je Cho, Seung Ho Ahn, Min Ho Lee: Lead-on-chip semiconductor device package having an adhesive layer formed from liquid adhesive and method for manufacturing the same. Samsung Electronics, Jones Volentine Steinberg & Whitt L, April 27, 1999: US05897339 (104 worldwide citation)

A lead-on-chip semiconductor device package is formed by attaching a lead frame having a single adhesive layer to a semiconductor chip. Electrode pads of the chip are electrically connected by bonding wires and mechanically connected by the adhesive layer to the lead frame, and then encapsulated by ...


8
Michael Farmwald, Mark Horowitz: Method of operating a synchronous memory device having a variable data output length. Rambus, Neil A Steinberg & Whitt L Steinberg, February 29, 2000: US06032214 (102 worldwide citation)

The present invention is directed to a method of operating a memory device wherein the memory device includes a plurality of memory cells. The method comprises providing first block size information to the memory device, wherein the first block size information defines a first amount of data to be o ...


9
Michael Farmwald, Mark Horowitz: Synchronous memory device. Rambus, Neil A Steinberg & Whitt Steinberg, November 30, 1999: US05995443 (100 worldwide citation)

The present invention includes a memory subsystem comprising at least two semiconductor devices, including at least one memory device, connected to a bus, where the bus includes a plurality of bus lines for carrying substantially all address, data and control information needed by said memory device ...


10
John S Csapo: Wireless internet network architecture for voice and data communications. Samsung Electronics, Jones Volentine Steinberg & Whitt L, June 8, 1999: US05910946 (98 worldwide citation)

At least one base station is connected to at least one central office via a T1/E1 trunk. Some channels of the trunk are assigned to carry PCM data destined for the public switched telephony network via the central office, while other channels of the truck are assigned to carry packet data destined f ...