1
Hisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga, Hongyong Zhang: Method for manufacturing a semiconductor device. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson PC, July 1, 1997: US05643826 (1054 worldwide citation)

A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film the ...


2
Shunpei Yamazaki, Yasuhiko Takemura, Hongyong Zhang, Toru Takayama, Hideki Uochi: Semiconductor, semiconductor device, and method for fabricating the same. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson PC, June 17, 1997: US05639698 (282 worldwide citation)

Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the ...


3
Morris Simon: Daisy occluder and method for septal defect repair. Daniel W Sixbey, Sixbey Friedman Leedom & Ferguson PC, April 21, 1998: US05741297 (263 worldwide citation)

The star occluder includes a frame formed from a first plurality of arms extending radially in a first plane and a second plurality of arms extending radially in a second plane which is spaced from and substantially parallel to the first plane. Loop joinder legs extend between the base ends of the f ...


4
Hisahi Ohtani, Akiharu Miyanaga, Hongyong Zhang, Naoaki Yamaguchi: Method for manufacturing semiconductor device. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson PC, February 25, 1997: US05605846 (201 worldwide citation)

A process for manufacturing a semiconductor device, particularly a thin film transistor, by using a crystalline silicon film having excellent characteristics. The process comprises forming a silicon nitride film and an amorphous silicon film in contact thereto, introducing a catalyst element capable ...


5
Hisashi Ohtani, Akiharu Miyanaga, Hongyong Zhang, Naoaki Yamaguchi, Atsunori Suzuki: Method for manufacturing a semiconductor device using a catalyst. Semiconductor Energy Laboratory, Sharp Corporation, Gerald J Ferguson Jr, Eric J Robinson, Sixbey Friedman Leedom & Ferguson PC, August 6, 1996: US05543352 (200 worldwide citation)

A method for manufacturing a thin film transistor having a crystalline silicon layer as an active layer comprises the steps of disposing a solution containing a catalyst for promoting a crystallization of silicon in contact with an amorphous silicon film, crystallizing the amorphous silicon at a rel ...


6
Frank Bonadio: Access port device for use in surgery. Gaya, Daniel W Sixbey, Sixbey Friedman Leedom & Ferguson PC, September 8, 1998: US05803921 (188 worldwide citation)

An access port device (40) for use in surgery is provided which comprises a sleeve (41,42) having an exit opening located at a distal end thereof for insertion into an incision made in a patient's body, the exit opening allowing access to the patient's body cavity. The device (40) also includes exit ...


7
Hongyong Zhang, Hideki Uochi, Toru Takayama, Yasuhiko Takemura, Mutsuo Yamamoto: Method of forming a thin film transistor. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson PC, January 21, 1997: US05595923 (180 worldwide citation)

A substance containing a catalyst element is formed so as to closely contact with an amorphous silicon film, or a catalyst element is introduced into the amorphous silicon film. The amorphous silicon film is annealed at a temperature which is lower than a crystallization temperature of usual amorpho ...


8
Toru Takayama, Yasuhiko Takemura: Semiconductor device having a thin film transistor and thin film diode. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson PC, December 31, 1996: US05589694 (177 worldwide citation)

Amorphous silicon in impurity regions (source and drain regions or N-type or p-type regions) of TFT and TFD are crystallized and activated to lower electric resistance, by depositing film having a catalyst element such as nickel (Ni), iron (Fe), cobalt (Co) or platinum (Pt) on or beneath an amorphou ...


9
Shunpei Yamazaki: Gate insulated field effect transistors and method of manufacturing the same. Semiconductor Energy Laboratory, Eric J Robinson, Sixbey Friedman Leedom & Ferguson PC, January 4, 2000: US06011277 (175 worldwide citation)

A thin film field effect transistors and manufacturing method for the same are described. The channel region of the transistor is spoiled by an impurity such as oxygen, carbon, nitrogen. The photosensitivity of the channel region is reduced by the spoiling impurity and therefore the transistor is en ...


10
Jun Koyama, Yuji Kawasaki: Semiconductor integrated circuit. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Eric J Robinson, Sixbey Friedman Leedom & Ferguson PC, March 30, 1999: US05889291 (173 worldwide citation)

In a monolithic active matrix circuit that uses offset-gate TFTs in which the gate electrode is offset from the source and drain regions or TFTs whose gate insulating film is formed by vapor deposition, not only an active matrix circuit but also a drive circuit therefor is formed by using P-channel ...