A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film the ...
Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the ...
The star occluder includes a frame formed from a first plurality of arms extending radially in a first plane and a second plurality of arms extending radially in a second plane which is spaced from and substantially parallel to the first plane. Loop joinder legs extend between the base ends of the f ...
A process for manufacturing a semiconductor device, particularly a thin film transistor, by using a crystalline silicon film having excellent characteristics. The process comprises forming a silicon nitride film and an amorphous silicon film in contact thereto, introducing a catalyst element capable ...
A method for manufacturing a thin film transistor having a crystalline silicon layer as an active layer comprises the steps of disposing a solution containing a catalyst for promoting a crystallization of silicon in contact with an amorphous silicon film, crystallizing the amorphous silicon at a rel ...
An access port device (40) for use in surgery is provided which comprises a sleeve (41,42) having an exit opening located at a distal end thereof for insertion into an incision made in a patient's body, the exit opening allowing access to the patient's body cavity. The device (40) also includes exit ...
A substance containing a catalyst element is formed so as to closely contact with an amorphous silicon film, or a catalyst element is introduced into the amorphous silicon film. The amorphous silicon film is annealed at a temperature which is lower than a crystallization temperature of usual amorpho ...
Amorphous silicon in impurity regions (source and drain regions or N-type or p-type regions) of TFT and TFD are crystallized and activated to lower electric resistance, by depositing film having a catalyst element such as nickel (Ni), iron (Fe), cobalt (Co) or platinum (Pt) on or beneath an amorphou ...
A thin film field effect transistors and manufacturing method for the same are described. The channel region of the transistor is spoiled by an impurity such as oxygen, carbon, nitrogen. The photosensitivity of the channel region is reduced by the spoiling impurity and therefore the transistor is en ...
In a monolithic active matrix circuit that uses offset-gate TFTs in which the gate electrode is offset from the source and drain regions or TFTs whose gate insulating film is formed by vapor deposition, not only an active matrix circuit but also a drive circuit therefor is formed by using P-channel ...
