21
Hsing C Tuan: High voltage thin film transistor. Xerox Corporation, Serge Abend, June 21, 1988: US04752814 (30 worldwide citation)

A high voltage amorphous silicon thin film transistor including a gate electrode which controls the injection of charge carriers from a superimposed n+ doped amorphous silicon source electrode into an amorphous silicon charge carrier transport layer, spaced from the gate electrode by a dielectric la ...


22
William G Hawkins, Jerry G Black: Laser annealing for growth of single crystal semiconductor areas. Xerox Corporation, Serge Abend, June 14, 1983: US04388145 (30 worldwide citation)

A method for laser induced conversion of large predefined areas of amorphous or polycrystalline semiconductor material, upon a substrate, into single crystal areas by using an infrared laser energy source to cause the bulk of heating to occur in the substrate and not in the predefined areas so that ...


23
Jacob D Haskell: Short-channel field effect transistor. Xerox Corporation, Serge Abend, March 1, 1988: US04729001 (30 worldwide citation)

An improved short-channel field effect transistor including a standard tip implant type of source and drain each disposed in the surface of a semiconductor substrate and a gate electrode positioned upon the substrate between the source and drain and control plugs disposed in the substrate and associ ...


24
Nicholas K Sheridan, Gerhard K Sander: Fluid assisted ion projection printing head. Xerox Corporation, Serge Abend, February 17, 1987: US04644373 (29 worldwide citation)

An improved fluid assisted ion projection printing head comprising a one-piece body having design features therein, including a generally U-shaped cavity, to which is mated a generally featureless, planar, conductive member which forms a closure for the major portion of the cavity opening and define ...


25
Tiao Yuan Huang, Anne Chiang, I Wei Wu: Method of fabrication a thin film SOI CMOS device. Xerox Corporation, Serge Abend, January 29, 1991: US04988638 (28 worldwide citation)

A thin film SOI CMOS device wherein the suitably doped deposited layers of an n-channel transistor and a p-channel transistor are simultaneously deposited. The source and drain elements of one transistor and the gate element of the other transistor are formed in a lower, highly doped, semiconductor ...


26
Bernard D Benz, Edward M Carlin Jr, Thomas D Gross: High capacity ribbon cartridge with surface drive. Xerox Corporation, Serge Abend, November 10, 1981: US04299504 (27 worldwide citation)

A ribbon cartridge for use in impact printers, typewriters or the like in which a supply spool and a take-up spool are enclosed in a housing with the center of each spool being supported for rotation and for floating movement along a guide path. A fixed center drive capstan imparts surface movement ...


27
Tiao Yuan Huang: Intra-gate offset high voltage thin film transistor with misalignment immunity and method of its fabrication. Xerox Corporation, Serge Abend, July 31, 1990: US04945067 (23 worldwide citation)

A high voltage thin film transistor comprising a substrate upon which is supported a non-single crystal semiconductor active layer, spaced from a pair of conductive gate electrodes by a gate dielectric layer, wherein one of the gate electrodes in the device control electrode and the other is a dummy ...


28
Michael Hack, Malcolm J Thompson, Hsing C Tuan: Method of using offset gated gap-cell thin film device as a photosensor. Xerox Corporation, Serge Abend, January 21, 1992: US05083175 (23 worldwide citation)

A method of utilizing a thin film device as a photosensor. The thin film device comprises a substrate upon which is deposited a charge transport layer, first and second injecting electrodes in low electrical resistance contact with the charge transport layer, the injecting electrodes being laterally ...


29
Hsing C Tuan, Malcolm J Thompson: Marking head for fluid jet assisted ion projection imaging systems. Xerox Corporation, Serge Abend, April 22, 1986: US04584592 (23 worldwide citation)

A fluid jet assisted ion projection electrographic marking apparatus including a marking head having integrally fabricated thereon, an array of modulating electrodes, divided into sections, address bus lines, data bus lines and suitable thin film switches, for sequentially bringing the electrodes of ...


30
Chein Hwa S Tsao: Thermal transfer printing system. Xerox Corporation, Richard A Tomlin, Serge Abend, August 18, 1987: US04688050 (21 worldwide citation)

A thermal transfer printing system in which a print scanning head is provided with a series of thermal heating elements. The elements are aligned in a column perpendicular to the line of printing. A sensor is provided to determine where the scanning head is aligned perpendicularly relative to the li ...