1
David K Biegesen, Noble M Johnson, Dirk J Bartlelink, Marvin D Moyer: Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas. Xerox Corporation, Serge Abend, May 18, 1982: US04330363 (201 worldwide citation)

A method for laser induced conversion of large predefined areas of amorphous or polycrystalline semiconductor material, disposed nonepitaxially upon a substrate, into large single crystal areas, by controlling the lateral heat flow out of the melted regions of the areas for causing their recrystalli ...


2
Warren B Jackson, Michael Hack: Electronic device with recovery layer proximate to active layer. Xerox Corporation, Serge Abend, January 14, 1992: US05081513 (197 worldwide citation)

An electronic device including a substantially intrinsic non-single crystal semiconductor active layer having a number of metastable defects therein, the active layer being responsive to the application of stress upon the device by shifting its Fermi level from an equilibrium state within its mobili ...


3
Larry W Lin, Stuart L Claassen, Chein Hwa Tsao: Spot deposition for liquid ink printing. Xerox Corporation, Serge Abend, May 31, 1988: US04748453 (154 worldwide citation)

A method of depositing spots of liquid ink upon selected pixel centers on a substrate having poor ink absorptive properties so as to prevent the flow of liquid ink from one spot to an overlapping adjacent one. The line of information is printed in at least two passes so as to deposit spots of liquid ...


4
David D Thornburg: Cursor control. Xerox Corporation, Serge Abend, January 26, 1982: US04313113 (113 worldwide citation)

A graphic input device for controlling the movement of a cursor upon a visual display. The device includes a number of variable resistance pressure transducers corresponding to the primary orthogonal directions of cursor movement. Each pressure transducer comprises a first electrode for selecting th ...


5
Tiao Yuan Huang: Double implanted LDD transistor self-aligned with gate. Xerox Corporation, Serge Abend, March 6, 1990: US04907048 (111 worldwide citation)

An improved double implanted and aligned LDD transistor comprising a gate having a central alignment member and a pair of outboard alignment members having portions contiguous with the gate oxide layer. A lightly doped junction is aligned with the central alignment members and a heavily doped juncti ...


6
David D Thornburg, Robert M Flegal, Tat C Lam: Graphics pen for soft displays. Xerox Corporation, Serge Abend, March 2, 1982: US04318096 (82 worldwide citation)

A graphics input device for use with location indicating means to present graphic data upon a computer controlled visual display. The device includes a pen having a housing within which is disposed a conductive stylus shaft, one end extending beyond the housing to serve as the writing tip. A cylindr ...


7
Tiao Yuan Huang: Method for fabricating double implanted LDD transistor self-aligned with gate. Xerox Corporation, Serge Abend, October 16, 1990: US04963504 (81 worldwide citation)

An improved double implanted and aligned LDD transistor comprising a gate having a central alignment member and a pair of outboard alignment members having portions contiguous with the gate oxide layer. A lightly doped junction is aligned with the central alignment member and a heavily doped junctio ...


8
Robert W Gundlach, Richard F Bergen: Fluid assisted ion projection printing. Xerox Corporation, Serge Abend, July 31, 1984: US04463363 (62 worldwide citation)

A fluid jet assisted electrographic marking apparatus for ion projection printing wherein ions are generated in a chamber, entrained in a rapidly moving fluid stream passing into, through and out of the chamber, modulated in an electroded exit zone by being selectively emitted or inhibited therein, ...


9
Robert A Barker, Chuang C Tsai, John C Knights: Controlled isotropic doping of semiconductor materials. Xerox Corporation, Serge Abend, October 6, 1987: US04698104 (48 worldwide citation)

A method of doping selected areas of semiconductor material in the fabrication of integrated circuit devices, including placing a semiconductor substrate in a glow discharge reactor, introducing reactant gases into the reactor, subjecting the reactant gases to a plasma discharge, depositing, upon th ...


10
Anne Chiang, I Wei Wu, Tiao Yuan Huang: Formation of large grain polycrystalline films. Xerox Corporation, Serge Abend, February 27, 1990: US04904611 (45 worldwide citation)

A method of forming large grain polycrystalline films by deep ion implantation into a composite structure, comprising a layer of amorphous semiconductor material upon an insulating substrate. Implantation is of a given ion species at an implant energy and dosage sufficient to distrupt the interface ...