1
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Joseph F Shepard, Kenneth J Stein, Kunal Vaed: PREVENTION OF Ta2O5 MIM CAP SHORTING IN THE BEOL ANNEAL CYCLES. International Business Machines Corporation, Scully Scott Murphy & Presser PC, June 3, 2004: US20040104420-A1 (1 worldwide citation)

The present invention provides a high-performance metal-insulator-metal (MIM) capacitor which contains a high-k dielectric, yet no substantial shorting of the MIM capacitor is observed. Specifically, shorting of the MIM capacitor is substantially prevented in the present invention by forming a passi ...


2
Katherina Babich
Marie Angelopoulos, Katherina Babich, S Jay Chey, Michael Straight Hibbs, Robert N Lang, Arpan Pravin Mahorowala, Kenneth Christopher Racette: Attenuated embedded phase shift photomask blanks. International Business Machines Corporation, Scully Scott Murphy & Presser PC, September 2, 2004: US20040170907-A1

An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen and oxygen. An etch stop layer is added to improve the etch selectivity of the phase shifting layer. A wide range of ...


3
Katherina Babich
Katherina E Babich, Bruce B Doris, David R Medeiros, Devendra K Sadana: Method for tuning epitaxial growth by interfacial doping and structure including same. International Business Machines Corporation, Scully Scott Murphy & Presser PC, April 26, 2007: US20070090487-A1

A method that allows for uniform, simultaneous epitaxial growth of a semiconductor material on dissimilarly doped semiconductor surfaces (n-type and p-type) that does not impart substrate thinning via a novel surface preparation scheme, as well as a structure that results from the implementation of ...


4
Katherina Babich
Katherina E Babich, Roy Arthur Carruthers, Timothy Joseph Dalton, Alfred Grill, Jeffrey Curtis Hedrick, Christopher Vincent Jahnes, Ebony Lynn Mays, Laurent Perraud, Sampath Purushothaman, Katherine Lynn Saenger: Multilayer interconnect structure containing air gaps and method for making. International Business Machines Corporation, Scully Scott Murphy & Presser PC, February 17, 2005: US20050037604-A1

A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and a composite solid plus air-gap dielectric in the wiring levels. Also provided is a method for forming such an interconnect structure. The method is readily scalable to ...


5
Katherina Babich
Katherina E Babich, Bruce B Doris, David R Medeiros, Devendra K Sadana: Method for tuning epitaxial growth by interfacial doping and structure including same. International Business Machines Corporation, Scully Scott Murphy & Presser PC, April 24, 2008: US20080093640-A1

A method that allows for uniform, simultaneous epitaxial growth of a semiconductor material on dissimilarly doped semiconductor surfaces (n-type and p-type) that does not impart substrate thinning via a novel surface preparation scheme, as well as a structure that results from the implementation of ...


6
Katherina Babich
Katherina E Babich, Bruce B Doris, David R Medeiros, Devendra K Sadana: Method for tuning epitaxial growth by interfacial doping and structure including same. International Business Machines Corporation, Scully Scott Murphy & Presser PC, June 26, 2008: US20080153270-A1

A method that allows for uniform, simultaneous epitaxial growth of a semiconductor material on dissimilarly doped semiconductor surfaces (n-type and p-type) that does not impart substrate thinning via a novel surface preparation scheme, as well as a structure that results from the implementation of ...


7
Eb Eshun
Ebenezer E Eshun, Steven H Voldman: High tolerance TCR balanced high current resistor for RF CMOS and RF SiGe BiCMOS applications and cadenced based hierarchical parameterized cell design kit with tunable TCR and ESD resistor ballasting feature. International Business Machines Corporation, Scully Scott Murphy & Presser PC, October 6, 2005: US20050221572-A1

A resistor device structure and method of manufacture therefore, wherein the resistor device structure invention includes a plurality of alternating conductive film and insulative film layers, at least two of the conductive film layers being electrically connected in parallel to provide for high cur ...


8
Eb Eshun
Anil K Chinthakindi, Douglas D Coolbaugh, Ebenezer E Eshun, Vincent J McGahay, Anthony K Stamper, Kunal Vaed, Richard P Volant: Single or dual damascene via level wirings and/or devices, and methods of fabricating same. International Business Machines Corporation, Scully Scott Murphy & Presser PC, July 5, 2007: US20070152332-A1

The present invention relates to integrated circuits that comprise via-level wirings and/or devices. Specifically, an integrate circuit of the present invention comprises a first line level and a second line level spaced apart from each other, with a via level therebetween. The first and second line ...


9
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Zhong Xiang He, William J Murphy, Vidhya Ramachandran: Inexpensive method of fabricating a higher performance capacitance density mimcap integrable into a copper interconnect scheme. International Business Machines Corporation, Scully Scott Murphy & Presser PC, December 15, 2005: US20050274987-A1

A method to integrate MIM capacitors into conductive interconnect levels, with low cost impact, and high yield, reliability and performance than existing integration methods is provided. This is accomplished by recessing a prior level dielectric for MIM capacitor level alignment followed by depositi ...


10
Eb Eshun
Ebenezer E Eshun, Steven H Voldman: HIGH TOLERANCE TCR BALANCED HIGH CURRENT RESISTOR FOR RF CMOS AND RF SiGe BiCMOS APPLICATIONS AND CADENCED BASED HIERARCHICAL PARAMETERIZED CELL DESIGN KIT WITH TUNABLE TCR AND ESD RESISTOR BALLASTING FEATURE. International Business Machines Corporation, Scully Scott Murphy & Presser PC, July 21, 2005: US20050156281-A1

A resistor device structure and method of manufacture therefore, wherein the resistor device structure invention includes a plurality of alternating conductive film and insulative film layers, at least two of the conductive film layers being electrically connected in parallel to provide for high cur ...