1
Katherina Babich
Katherina E Babich, Roy Arthur Carruthers, Timothy Joseph Dalton, Alfred Grill, Jeffrey Curtis Hedrick, Christopher Vincent Jahnes, Ebony Lynn Mays, Laurent Perraud, Sampath Purushothaman, Katherine Lynn Saenger: Multilayer interconnect structure containing air gaps and method for making. International Business Machines Corporation, Robert M Trepp, Scully Scott Murphy & Presser, November 9, 2004: US06815329 (40 worldwide citation)

A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and a composite solid plus air-gap dielectric in the wiring levels. Also provided is a method for forming such an interconnect structure. The method is readily scalable to ...


2
Katherina Babich
Katherina Babich, Alessandro Callegari, Stephen Alan Cohen, Alfred Grill, Christopher Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Sampath Purushothaman, Katherine Lynn Saenger: Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation. International Business Machines Corporation, Robert M Trepp, Scully Scott Murphy & Presser, September 10, 2002: US06448655 (21 worldwide citation)

A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes th ...


3
Katherina Babich
Katherina E Babich, Roy Arthur Carruthers, Timothy Joseph Dalton, Alfred Grill, Jeffrey Curtis Hedrick, Christopher Vincent Jahnes, Ebony Lynn Mays, Laurent Perraud, Sampath Purushothaman, Katherine Lynn Saenger: Multilayer interconnect structure containing air gaps and method for making. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Robert M Trepp Esq, August 29, 2006: US07098476 (16 worldwide citation)

A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and a composite solid plus air-gap dielectric in the wiring levels. Also provided is a method for forming such an interconnect structure. The method is readily scalable to ...


4
Katherina Babich
Katherina Babich, Alessandro Callegari, Stephen Alan Cohen, Alfred Grill, Christopher Vincent Jahnes, Vishnubhai Vitthalbhai Patel, Sampath Purushothaman, Katherine Lynn Saenger: Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation. International Business Machines Corporation, Robert M Trepp Esq, Scully Scott Murphy & Presser, July 6, 2004: US06759321 (11 worldwide citation)

A method for providing regions of substantially lower fluorine content in a fluorine containing dielectric is described incorporating exposing a region to ultraviolet radiation and annealing at an elevated temperature to remove partially disrupted fluorine from the region. The invention overcomes th ...


5
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Zhong Xiang He, William J Murphy, Vidhya Ramachandran: Inexpensive method of fabricating a higher performance capacitance density MIMcap integrable into a copper interconnect scheme. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Anthony J Canale, October 16, 2007: US07282404 (6 worldwide citation)

A method to integrate MIM capacitors into conductive interconnect levels, with low cost impact, and high yield, reliability and performance than existing integration methods is provided. This is accomplished by recessing a prior level dielectric for MIM capacitor level alignment followed by depositi ...


6
Eb Eshun
Anil K Chinthakindi, Ebenezer E Eshun: Thin film resistor with current density enhancing layer (CDEL). International Business Machines Corporation, Scully Scott Murphy & Presser P C, Lisa U Jaklitsch, September 18, 2007: US07271700 (5 worldwide citation)

A thin film resistor device and method of manufacture includes a layer of a thin film conductor material and a current density enhancing layer (CDEL). The CDEL is an insulator material adapted to adhere to the thin film conductor material and enables the said thin film resistor to carry higher curre ...


7
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Ephrem G Gebreselasie, Zhong Xiang He, Herbert Lei Ho, Deok kee Kim, Chandrasekharan Kothandaraman, Dan Moy, Robert Mark Rassel, John Matthew Safran, Kenneth Jay Stein, Norman Whitelaw Robson, Ping Chuan Wang, Hongwen Yan: Metal gate integration structure and method including metal fuse, anti-fuse and/or resistor. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Yuanmin Cai, April 17, 2012: US08159040 (5 worldwide citation)

A semiconductor structure and a method for fabricating the semiconductor structure provide a field effect device located and formed upon an active region of a semiconductor substrate and at least one of a fuse structure, an anti-fuse structure and a resistor structure located and formed at least in ...


8
Eb Eshun
Roger A Booth Jr, Douglas D Coolbaugh, Ebenezer E Eshun, Zhong Xiang He: Interdigitated vertical parallel capacitor. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Katherine S Brown, February 19, 2013: US08378450 (4 worldwide citation)

An interdigitated structure may include at least one first metal line, at least one second metal line parallel to the at least one first metal line and separated from the at least one first metal line, and a third metal line contacting ends of the at least one first metal line and separated from the ...


9
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Joseph F Shepard Jr, Kenneth J Stein, Kunal Vaed: Prevention of Ta2O5 mim cap shorting in the beol anneal cycles. International Business Machines Corporation, Scully Scott Murphy & Presser, Anthony J Canale Esq, September 6, 2005: US06940117 (4 worldwide citation)

The present invention provides a high-performance metal-insulator-metal (MIM) capacitor which contains a high-k dielectric, yet no substantial shorting of the MIM capacitor is observed. Specifically, shorting of the MIM capacitor is substantially prevented in the present invention by forming a passi ...


10
Eb Eshun
Thomas A Wallner, Ebenezer E Eshun, Daniel J Jaeger, Phung T Nguyen: Method of forming bipolar transistor integrated with metal gate CMOS devices. International Business Machines Corporation, Scully Scott Murphy & Presser P C, H Daniel Schnurmann, March 6, 2012: US08129234 (4 worldwide citation)

A high-k gate dielectric layer and a metal gate layer are formed and patterned to expose semiconductor surfaces in a bipolar junction transistor region, while covering a CMOS region. A disposable material portion is formed on a portion of the exposed semiconductor surfaces in the bipolar junction tr ...



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