1
Yoshi Ono, Wei Wei Zhuang, Rajendra Solanki: Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate. Sharp Laboratories of America, Matthew D Rabdau, David C Ripma, Scott C Krieger, July 16, 2002: US06420279 (262 worldwide citation)

Methods of forming hafnium oxide, zirconium oxide and nanolaminates of hafnium oxide and zirconium oxide are provided. These methods utilize atomic layer deposition techniques incorporating nitrate-based precursors, such as hafnium nitrate and zirconium nitrate. The use of these nitrate based precur ...


2
Yanjun Ma, Yoshi Ono: Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same. Sharp Laboratories of America, Matthew D Rabdau, David C Ripma, Scott C Krieger, October 2, 2001: US06297539 (246 worldwide citation)

A high-k dielectric films is provided, which is doped with divalent or trivalent metals to vary the electron affinity, and consequently the electron and hole barrier height. The high-k dielectric film is a metal oxide of either zirconium (Zr) or hafnium (Hf), doped with a divalent metal, such as cal ...


3
Yanjun Ma, Yoshi Ono: Multilayer dielectric stack and method. Sharp Laboratories of America, Matthew D Rabdau, David C Ripma, Scott C Krieger, June 18, 2002: US06407435 (227 worldwide citation)

A multilayer dielectric stack is provided which has alternating layers of a high-k material and an interposing material. The presence of the interposing material and the thinness of the high-k material layers reduces or eliminate effects of crystallization within the high-k material, even at relativ ...


4
Sheng Teng Hsu: CMOS self-aligned strapped interconnection. Sharp Laboratories of America, David C Ripma, Matthew D Rabdau, Scott C Krieger, May 14, 2002: US06388296 (186 worldwide citation)

An CMOS interconnection method that permits small source/drain surface areas has been provided. The interconnection is applicable to both strap and via type connections. The surface areas of the small source/drain regions are extended into neighboring field oxide regions by forming a silicide film f ...


5
Yanjun Ma, Yoshi Ono: Method of forming a multilayer dielectric stack. Sharp Laboratories of America, Matthew D Rabdau, David C Ripma, Scott C Krieger, September 30, 2003: US06627503 (170 worldwide citation)

A multilayer dielectric stack is provided which has alternating layers of a high-k material and an interposing material. The presence of the interposing material and the thinness of the high-k material layers reduces or eliminate effects of crystallization within the high-k material, even at relativ ...


6
Joey P Lum, Uoc H Nguyen, Boguslaw Ludwik Plewnia, Lena Sojian: Methods and systems for administering imaging device notification access control. Sharp Laboratories of America, Krieger Intellectual Property, Scott C Krieger, September 6, 2011: US08015234 (160 worldwide citation)

Aspects of the present invention relate to systems, methods and devices for imaging device event notification administration and subscription. Some aspects relate to selective imaging device event notification based on user credentials and/or the occurrence of a specific event. Some aspects may limi ...


7
Andrew Rodney Ferlitsch, Darwin Alan DeVore: Systems and methods for manipulating electronic information using a three-dimensional iconic representation. Sharp Laboratories of America, Krieger Intellectual Property, Scott C Krieger, September 4, 2007: US07266768 (151 worldwide citation)

Embodiments of the present invention relate to methods and systems for editing, creating and modifying documents through the use of multiple function icons in a graphical user interface environment. Icons comprising a series of object images may represent documents and the pages thereof. Manipulatio ...


8
Sheng Teng Hsu, Wei Wei Zhuang: Electrically programmable resistance cross point memory. Sharp Laboratories of America, Matthew D Rabdau, David C Ripma, Scott C Krieger, March 11, 2003: US06531371 (93 worldwide citation)

Resistive cross point memory devices are provided, along with methods of manufacture and use. The memory device comprises an active layer of perovskite material interposed between upper electrodes and lower electrodes. A bit region located within the active layer at the cross point of an upper elect ...


9
Sheng Teng Hsu, Wei Wei Zhuang: Low cross-talk electrically programmable resistance cross point memory. Sharp Laboratories of America, Matthew D Rabdau, David C Ripma, Scott C Krieger, February 17, 2004: US06693821 (91 worldwide citation)

Low cross talk resistive cross point memory devices are provided, along with methods of manufacture and use. The memory device comprises a bit formed using a perovskite material interposed at a cross point of an upper electrode and lower electrode. Each bit has a resistivity that can change through ...


10
Atsushi Ishii: Mobile-initiated, packet switched communications method. Sharp Laboratories of America, David C Ripma, Matthew D Rabdau, Scott C Krieger, April 23, 2002: US06377790 (87 worldwide citation)

A method is provided which permits the conservation of wireless mobile station battery power in a system where only the mobile station initializes requests for data transfer, such as a wireless packet switched connection network. The method is especially practical in the transfer of large amounts of ...