1
Levinson Harry J: Method for monitoring and controlling imaging in immersion lithography systems. Advanced Micro Devices, Levinson Harry J, sCOLLOPY Daniel R, February 10, 2005: WO/2005/013008 (354 worldwide citation)

A method of monitoring an immersion lithography system (10) in which a wafer (12) can be immersed in a liquid immersion medium (24). The method detects an index of refraction of the immersion medium in a volume of the immersion medium through which an exposure pattern is configured to traverse and d ...


2
Pawloski Adam R, Ado Amr Y, Amblard Gilles R, Lafontaine Bruno M, Lalovic Ivan, Levinson Harry J, Schefske Jeffrey A, Tabery Cyrus E, Tsai Frank: Immersion medium bubble elimination in immersion lithography. Advanced Micro Devices, Pawloski Adam R, Ado Amr Y, Amblard Gilles R, Lafontaine Bruno M, Lalovic Ivan, Levinson Harry J, Schefske Jeffrey A, Tabery Cyrus E, Tsai Frank, sCOLLOPY Daniel R, March 10, 2005: WO/2005/022266 (352 worldwide citation)

A method of operating an immersion lithography system (26), including steps of immersing at least a portion of a wafer (12) to be exposed in an immersion medium (24), wherein the immersion medium comprises at least one bubble (28); directing an ultrasonic wave (36) through at least a portion of the ...


3
Levinson Harry J: Method and apparatus for monitoring and controlling imaging in immersion lithography systems. Advanced Micro Devices, Levinson Harry J, sCOLLOPY Daniel R, February 24, 2005: WO/2005/017625 (351 worldwide citation)

A method of monitoring an immersion lithography system (10) in which a wafer (12) can be immersed in a liquid immersion medium (22) for exposure by an exposure pattern. The method detects the presence of a foreign body in the immersion medium to thereby determine if the immersion medium in a state t ...


4
Woo Christy, Besser Paul R, Ngo Minh Van, Pan Janes N, Yin Jinsong: A method of forming a metal gate structure with tuning of work function by silicon incorporation. Advanced Micro Devices, Woo Christy, Besser Paul R, Ngo Minh Van, Pan Janes N, Yin Jinsong, sCOLLOPY Daniel R, November 4, 2004: WO/2004/095556 (28 worldwide citation)

A method for forming a semiconductor structure having a metal gate (30) with a controlled work function includes the step of forming a precursor having a substrate (10) with active regions (12) separated by a channel, a temporary gate (16) over the channel and within a dielectric layer (20). The tem ...


5
Paton Eric N, Xiang Qi, Besser Paul R, Lin Ming Ren, Ngo Minh Van, Wang Haihong: Mosfets incorporating nickel germanosilicided gate and methods of their formation. Advanced Micro Devices, sCOLLOPY Daniel R, May 6, 2004: WO/2004/038807 (17 worldwide citation)

A MOSFET gate or a MOSFET source or drain region comprises silicon germanium or polycrystalline silicon germanium. Silicidation with nickel is performed to form a nickel germanosilicide (62, 64) that preferably comprises the monosilicide phase of nickel silicide. The inclusion of germanium in the si ...


6
Dakshina Murthy Srikanteswara, An Judy Xilin, Krivokapic Zoran, Wang Haihong, Yu bin: Strained channel finfet. Advanced Micro Devices, Dakshina Murthy Srikanteswara, An Judy Xilin, Krivokapic Zoran, Wang Haihong, Yu bin, sCOLLOPY Daniel R, August 12, 2004: WO/2004/068585 (4 worldwide citation)

A semiconductor structure includes a fin (205) and a layer (305) formed on the fin. The fin (205) includes a first crystalline material having a rectangular cross section and a number of surfaces. The layer (305) is formed on the surfaces and includes a second crystalline material. The first crystal ...


7
Vanbuskirk Michael A, Fang Tzu Ning, Bill Colin S, Lan Zhida: Control of memory arrays utilizing zener diode-like devices. Advanced Micro Devices, sCOLLOPY Daniel R, May 21, 2004: WO/2004/042738 (4 worldwide citation)

The present invention facilitates semiconductor devices by aiding the efficiency in the way individual devices change states in a semiconductor array (100, 200, 212, 300, 400). State change voltages can be applied to a single device in the array (100, 200, 212, 300, 400) of semiconductor devices wit ...


8
Krivokapic Zoran, An Judy Xilin, Dakshina Murthy Srikanteswara, Wang Haihong, Yu bin: Narrow fin finfet. Advanced Micro Devices, Krivokapic Zoran, An Judy Xilin, Dakshina Murthy Srikanteswara, Wang Haihong, Yu bin, sCOLLOPY Daniel R, August 12, 2004: WO/2004/068589 (3 worldwide citation)

A narrow channel FinFET is described herein with a channel width of less than 6 nm. The FinFET may include a fin (140) in which the channel area is trimmed using a NH4OH etch or a reactive ion etch (RIE).


9
Bonser Douglas J, Plat Marina V, Yang Chih Yuh, Bell Scott A, Chan Darin A, Fisher Philip A, Lyons Christopher F, Chang Mark S, Gao Pei Yuan, Wright Marilyn I, You Lu, Dakshina Murthy Srikanteswara: Method for reducing pattern deformation and photoresist poisoning in semiconductor device fabrication. Advanced Micro Devices, sCOLLOPY Daniel R, February 5, 2004: WO/2004/012246 (3 worldwide citation)

A hardmask stack is comprised of alternating layers of doped amorphous carbon (22) and undoped amorphous carbon (20). The undoped amorphous carbon layers (20) serve as buffer layers that constrain the effects of compressive stress within the doped amorphous carbon layers (22) to prevent delamination ...


10
Lan Zhida, Van, Buskirk Michael A, Bill Colin S: Memory device and methods of using and making the device. Advanced Micro Devices, Lan Zhida, Van, Buskirk Michael A, Bill Colin S, sCOLLOPY Daniel R, February 3, 2005: WO/2005/011014 (3 worldwide citation)

A memory cell (104) made of two electrodes(106, 202, 108, 204) with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media (110) contains an active low conductive layer (112) and passive layer (114). The controllably conductive media (110) changes ...



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