1
Xavier Baie
Brent A Anderson, Xavier Baie, Randy W Mann, Edward J Nowak, Jed H Rankin: High mobility transistors in SOI and method for forming. International Business Machines Corporation, Mark F Chadurjian, Schmeiser Olsen & Watts, September 23, 2003: US06624478 (25 worldwide citation)

The present invention provides a device design and method for forming Field Effect Transistors (FETs) that have improved performance without negative impacts to device density. The present invention forms high-gain p-channel transistors by forming them on silicon islands where hole mobility has been ...


2
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Richard J Rassel, Robert M Rassel: Tunable temperature coefficient of resistance resistors and method of fabricating same. International Business Machines Corporation, Schmeiser Olsen & Watts, Anthony Canale, May 15, 2007: US07217981 (15 worldwide citation)

Tunable TCR resistors incorporated into integrated circuits and a method fabricating the tunable TCR resistors. The tunable TCR resistors including two or more resistors of two or more different materials having opposite polarity and different magnitude TCRs, the same polarity and different magnitud ...


3
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Jeffrey P Gambino, Zhong Xiang He, Vidhya Ramachandran: Metal-insulator-metal capacitor and method of fabrication. International Business Machines Corporation, Schmeiser Olsen & Watts, William D Sabo, April 5, 2005: US06876028 (15 worldwide citation)

A method and structure for a MIM capacitor, the structure including: an electronic device, comprising: an interlevel dielectric layer formed on a semiconductor substrate; a copper bottom electrode formed in the interlevel dielectric layer, a top surface of the bottom electrode co-planer with a top s ...


4
Eb Eshun
Douglas D Coolbaugh, Daniel C Edelstein, Ebenezer E Eshun, Zhong Xiang He, Robert M Rassel, Anthony K Stamper: Terminal pad structures and methods of fabricating same. International Business Machines Corporation, Schmeiser Olsen & Watts, Steven Capella, April 22, 2008: US07361993 (11 worldwide citation)

Terminal pads and methods of fabricating terminal pads. The methods including forming a conductive diffusion barrier under a conductive pad in or overlapped by a passivation layer comprised of multiple dielectric layers including diffusion barrier layers. The methods including forming the terminal p ...


5
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Richard J Rassel, Robert M Rassel: Tunable temperature coefficient of resistance resistors and method of fabricating same. International Business Machines Corporation, Schmeiser Olsen & Watts, Anthony J Canale, February 9, 2010: US07659176 (5 worldwide citation)

Tunable TCR resistors incorporated into integrated circuits and a method fabricating the tunable TCR resistors. The tunable TCR resistors including two or more resistors of two or more different materials having opposite polarity and different magnitude TCRs, the same polarity and different magnitud ...


6
Eb Eshun
Douglas D Coolbaugh, Daniel C Edelstein, Ebenezer E Eshun, Zhong Xiang He, Robert M Rassel, Anthony K Stamper: Terminal pad structures and methods of fabricating same. International Business Machines Corporation, Schmeiser Olsen & Watts, Steven Capella, February 24, 2009: US07494912 (5 worldwide citation)

Terminal pads and methods of fabricating terminal pads. The methods including forming a conductive diffusion barrier under a conductive pad in or overlapped by a passivation layer comprised of multiple dielectric layers including diffusion barrier layers. The methods including forming the terminal p ...


7
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Robert M Rassel, Anthony K Stamper: Resistor tuning. International Business Machines Corporation, Schmeiser Olsen & Watts, Anthony J Canale, July 3, 2007: US07239006 (3 worldwide citation)

A structure for resistors and the method for tuning the same. The resistor comprises an electrically conducting region coupled to a liner region. Both the electrically conducting region and the liner region are electrically coupled to first and second contact regions. A voltage difference is applied ...


8
James Kraemer Ph.D.
Robert Lee Angell, Robert R Friedlander, James R Kraemer: Risk assessment between aircrafts. International Business Machines Corporation, Schmeiser Olsen & Watts, John R Pivnichny, January 11, 2011: US07870085 (2 worldwide citation)

A risk assessment method and system. The method includes receiving by an inference engine, first sensor cohort data associated with a first cohort located within a first aircraft. The inference engine receives first group technology inferences associated with the first cohort. The inference engine g ...


9
James Kraemer Ph.D.
Robert Lee Angell, Robert R Friedlander, James R Kraemer: Risk assessment between airports. International Business Machines Corporation, Schmeiser Olsen & Watts, John R Pivnichny, February 8, 2011: US07885909

A risk assessment method and system. The method includes receiving by an inference engine, first sensor cohort data associated with a first cohort located within a first airport. The inference engine receives first group technology inferences associated with the first cohort. The inference engine ge ...


10
James Kraemer Ph.D.
Robert Lee Angell, Robert R Friedlander, James R Kraemer: Risk assessment in a pre/post security area within an airport. International Business Machines Corporation, Schmeiser Olsen & Watts, John R Pivnichny, February 22, 2011: US07895144

A risk assessment method and system. The method includes receiving by an inference engine, first sensor cohort data associated with a first cohort located within a pre/post security area within an airport. The inference engine receives first group technology inferences associated with the first coho ...



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