1
Ravi Laxman
Yin Pang Tsui, Thomas Elwood Zellner, Rajiv K Agarwal, Ravi Kumar Laxman: Process for the production and purification of bis(tertiary-butylamino)silane. Air Products and Chemicals, Rosaleen P Morris Oskanian, November 8, 2005: US06963006 (6 worldwide citation)

A process for synthesizing an aminosilane compound such as bis(tertiarybutylamino)silane is provided. In one aspect of the present invention, there is provided a process for making bis(tertiarybutylamino)silane comprising reacting a stoichiometric excess of tert-butylamine with dichlorosilane under ...


2
Raymond Nicholas Vrtis, Mark Leonard O Neill, Jean Louise Vincent, Aaron Scott Lukas, Manchao Xiao, John Anthony Thomas Norman: Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants. Air Products and Chemicals, Rosaleen P Morris Oskanian, January 25, 2005: US06846515 (106 worldwide citation)

A method for providing a porous organosilica glass (OSG) film that consists of a single phase of a material represented by the formula SivOwCxHyFz, v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 ...


3
Aaron Scott Lukas, Mark Leonard O Neill, Jean Louise Vincent, Raymond Nicholas Vrtis, Mark Daniel Bitner, Eugene Joseph Karwacki Jr: Mechanical enhancement of dense and porous organosilicate materials by UV exposure. Air Products and Chemicals, Rosaleen P Morris Oskanian, August 29, 2006: US07098149 (99 worldwide citation)

Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light sour ...


4
Bing Ji, Stephen Andrew Motika, Ronald Martin Pearlstein, Eugene Joseph Karwacki Jr, Dingjun Wu: Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials. Air Products and Chemicals, Rosaleen P Morris Oskanian, April 15, 2008: US07357138 (69 worldwide citation)

A process for the removal of a substance from a substrate for etching and/or cleaning applications is disclosed herein. In one embodiment, there is provided a process for removing a substance having a dielectric constant greater than silicon dioxide from a substrate by reacting the substance with a ...


5
Mark Leonard O&apos Neill, Brian Keith Peterson, Jean Louise Vincent, Raymond Nicholas Vrtis: Low dielectric constant material and method of processing by CVD. Air Products and Chemicals, Rosaleen P Morris Oskanian, April 6, 2004: US06716770 (53 worldwide citation)

Organofluorosilicate glass films contain both organic species and inorganic fluorines, exclusive of significant amounts of fluorocarbon species. Preferred films are represented by the formula Si


6
Peng Zhang, Danielle Megan King Curzi, Eugene Joseph Karwacki Jr, Leslie Cox Barber: Process solutions containing surfactants. Air Products and Chemicals, Rosaleen P Morris Oskanian, Joseph D Rossi, October 31, 2006: US07129199 (44 worldwide citation)

Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce post-development defects such as pattern collapse when employed as a r ...


7
John Anthony Thomas Norman, David Allen Roberts, Melanie Anne Boze: Process for atomic layer deposition of metal films. Air Products and Chemicals, Rosaleen P Morris Oskanian, March 22, 2005: US06869876 (27 worldwide citation)

In the present invention, a metal halide film is grown which is then reduced to the metal film rather than growing the metal film directly on the substrate surface. In certain embodiments, a metal halide film is grown from at least two precursors: a halogen-containing precursor and a metal-containin ...


8
Hansong Cheng, Manchao Xiao, Gauri Sankar Lal, Thomas Richard Gaffney, Chenggang Zhou, Jinping Wu: Precursors for depositing silicon-containing films and methods for making and using same. Air Products and Chemicals, Rosaleen P Morris Oskanian, March 6, 2012: US08129555 (24 worldwide citation)

Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following f ...


9
Hareesh Thridandam, Manchao Xiao, Xinjian Lei, Thomas Richard Gaffney: Process for producing silicon oxide films for organoaminosilane precursors. Air Products and Chemicals, Rosaleen P Morris Oskanian, January 25, 2011: US07875312 (19 worldwide citation)

The present invention is directed to a method for depositing a silicon oxide layer on a substrate by CVD. The reaction of an organoaminosilane precursor where the alkyl group has at least two carbon atoms in the presence of an oxidizing agent allows for the formation of a silicon oxide film. The org ...


10
Wade H Bailey III, William J Casteel Jr, Reno J Pesaresi, Frank M Prozonic: Process for the synthesis of aryl sulfurpentafluorides. Air Products and Chemicals, Rosaleen P Morris Oskanian, March 21, 2006: US07015176 (17 worldwide citation)

A process is described for the synthesis of an aryl sulfur pentafluoride compound. In one embodiment of the present invention, there is provided a process for preparing an aryl sulfurpentafluoride compound comprising: combining an at least one aryl sulfur compound with a fluorinating agent to at lea ...