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Douglas R Farrenkopf, Richard B Merrill, Samar Saha, Kevin E Brehmer, Kamesh Gadepally, Philip J Cacharelis: Semiconductor structure having two levels of buried regions. National Semiconductor Corporation, Ronald J Meetin, Skjerven Morrill MacPherson Franklin & Friel, March 30, 1999: US05889315 (157 worldwide citation)

Integrated circuits suitable for high-performance applications, especially mixed signal products that have analog and digital sections, are fabricatable from a semiconductor structure having two levels of buried regions. In a typical embodiment lower buried regions of opposite conductivity types are ...


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Constantin Bulucea: Fabrication of multiple field-effect transistor structure having local threshold-adjust doping. National Semiconductor Corporation, Ronald J Meetin, Skjerven Morrill MacPherson Franklin & Friel, February 1, 2000: US06020227 (130 worldwide citation)

A structure containing multiple field-effect transistors (60 and 150) is fabricated from a semiconductor body having material (82) of a specified conductivity type. Semiconductor dopant of the specified conductivity type is introduced, typically simultaneously, (a) into part of a first channel zone ...


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Douglas R Farrenkopf, Richard B Merrill, Samar Saha, Kevin E Brehmer, Kamesh Gadepally, Philip J Cacharelis: Fabrication of semiconductor structure having two levels of buried regions. National Semiconductor Corporation, Ronald J Meetin, Skjerven Morrill MacPherson Franklin & Friel, May 4, 1999: US05899714 (128 worldwide citation)

Integrated circuits suitable for high-performance applications, especially mixed signal products that have analog and digital sections, are fabricated from a semiconductor structure in which lower buried regions of opposite conductivity types are situated along a lower semiconductor interface betwee ...


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Christopher J Spindt, John M Macaulay: Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals. Silicon Video Corporation, Ronald J Meetin, Skjerven Morrill MacPherson Franklin & Friel, September 24, 1996: US05559389 (107 worldwide citation)

A gated electron-emitting device contains a multiplicity of electron-emissive elements, each formed with a pedestal (98) and an overlying cone (94.sub.1). In each electron-emissive element, the base diameter of the cone is greater than the element, the base diameter of the cone is greater than the d ...


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Hung Wah A Lau: Apparatus for transmitting and/or receiving data at different data transfer rates especially in applications such as dual-rate ethernet local-area networks. National Semiconductor Corporation, Paul J Winters, Ronald J Meetin, Skjerven Morrill MacPherson Franklin & Friel, July 30, 1996: US05541957 (100 worldwide citation)

A data-transmitting apparatus contains first and second transmitters, a transmit transformer, and a connecting unit for coupling the transformer to an outgoing twisted-pair cable. The first transmitter filters data to produce outgoing data transmitted to the transformer at a first data rate. The sec ...


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Jeng Jiun Yang, Constantin Bulucea, Sandeep R Bahl: Fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone. National Semiconductor Corporation, Ronald J Meetin, April 24, 2012: US08163619 (98 worldwide citation)

An asymmetric insulated-gate field effect transistor (100U or 102U) is provided along an upper surface of a semiconductor body so as to have first and second source/drain zones (240 and 242 or 280 and 282) laterally separated by a channel zone (244 or 284) of the transistor's body material. A gate e ...


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Constantin Bulucea, Daniel C Kerr: Design and fabrication of semiconductor structure having complementary channel-junction insulated-gate field-effect transistors whose gate electrodes have work functions close to mid-gap semiconductor value. National Semiconductor Corporation, Ronald J Meetin, Skjerven Morrill MacPherson Franklin & Friel, September 14, 1999: US05952701 (92 worldwide citation)

A pair of complementary CJIGFETs (100 and 160) are created from a body of semiconductor material (102 and 104). Each CJIGFET is formed with (a) a pair of laterally separated source/drain zones (112 and 114 or 172 and 174) situated along the upper surface of the semiconductor body, (b) a channel regi ...


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Constantin Bulucea, Philipp Lindorfer: Fabrication of semiconductor structure having N-channel channel-junction field-effect transistor. National Semiconductor Corporation, Ronald J Meetin, September 29, 2009: US07595243 (88 worldwide citation)

A semiconductor technology combines a normally off n-channel channel-junction insulated-gate field-effect transistor (“IGFET”) (104) and an n-channel surface-channel IGFET (100 or 160) to reduce low-frequency 1/f noise. The channel-junction IGFET is normally fabricated to be of materially greater ga ...