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Shunpei Yamazaki: Semiconductor device having LDD regions. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, June 21, 2005: US06909114 (174 worldwide citation)

There is provided a thin film transistor having improved reliability. A gate electrode includes a first gate electrode having a taper portion and a second gate electrode with a width narrower than the first gate electrode. A semiconductor layer is doped with phosphorus of a low concentration through ...


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Shunpei Yamazaki: Method of manufacturing a semiconductor device. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, April 3, 2007: US07199024 (151 worldwide citation)

There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the single crysta ...


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Shunpei Yamazaki, Toshimitsu Konuma, Mayumi Mizukami: Light-emitting EL display device. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, November 4, 2003: US06641933 (134 worldwide citation)

By repeating a purification process of a light-emitting organic compound several times, a thin film made of the light-emitting organic compound to be used in an EL display device contains ionic impurities at the concentration of 0.1 ppm or lower and has a volume resistivity in the range of 3×10


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Shunpei Yamazaki: Electro-optical device and method for manufacturing the same. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, October 3, 2006: US07115902 (132 worldwide citation)

An electro-optical device and a method for manufacturing the same are disclosed. The device comprises a pair of substrates and an electro-optical modulating layer (e.g. a liquid crystal layer having sandwiched therebetween, said pair of substrates consisting of a first substrate having provided ther ...


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Shunpei Yamazaki: Electro-optical device. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, June 27, 2006: US07067844 (130 worldwide citation)

An electro-optical device is disclosed. The device comprises a pair of substrates and an electro-optical modulating layer (e.g. a liquid crystal layer) having sandwiched therebetween, said pair of substrates consisting of a first substrate having provided thereon a plurality of gate wires, a plurali ...


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Shunpei Yamazaki: Electro-optical device and method for manufacturing the same. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, August 29, 2006: US07098479 (126 worldwide citation)

An electro-optical device and a method for manufacturing the same are disclosed. The device comprises a pair of substrates and an electro-optical modulating layer (e.g. a liquid crystal layer having sandwiched therebetween, said pair of substrates consisting of a first substrate having provided ther ...


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Shunpei Yamazaki: Semiconductor device and manufacturing method thereof. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, March 18, 2003: US06534826 (126 worldwide citation)

A semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided.


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Koji Ono, Hideomi Suzawa, Tatsuya Arao: Semiconductor device with tapered gate and insulating film. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, November 11, 2003: US06646287 (117 worldwide citation)

In a semiconductor device, typically an active matrix display device, the structure of TFTs arranged in the respective circuits are made suitable in accordance with the function of the circuit, and along with improving the operating characteristics and the reliability of the semiconductor device, th ...


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Shunpei Yamazaki, Jun Koyama, Hiroshi Shibata, Takeshi Fukunaga: Semiconductor device and method of fabricating the same. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, October 28, 2003: US06639244 (117 worldwide citation)

A semiconductor device having high TFT characteristics is realized. In a pixel matrix circuit of an AM-LCD, a lower electrode of a storage capacitor is made to include an element in group



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