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Shunpei Yamazaki: Semiconductor device having LDD regions. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, June 21, 2005: US06909114 (183 worldwide citation)

There is provided a thin film transistor having improved reliability. A gate electrode includes a first gate electrode having a taper portion and a second gate electrode with a width narrower than the first gate electrode. A semiconductor layer is doped with phosphorus of a low concentration through ...


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Shunpei Yamazaki: Method of manufacturing a semiconductor device. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, April 3, 2007: US07199024 (151 worldwide citation)

There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the single crysta ...


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Shunpei Yamazaki, Toshimitsu Konuma, Mayumi Mizukami: Light-emitting EL display device. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, November 4, 2003: US06641933 (143 worldwide citation)

By repeating a purification process of a light-emitting organic compound several times, a thin film made of the light-emitting organic compound to be used in an EL display device contains ionic impurities at the concentration of 0.1 ppm or lower and has a volume resistivity in the range of 3×10


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Shunpei Yamazaki, Jun Koyama, Hiroshi Shibata, Takeshi Fukunaga: Semiconductor device and method of fabricating the same. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, October 28, 2003: US06639244 (142 worldwide citation)

A semiconductor device having high TFT characteristics is realized. In a pixel matrix circuit of an AM-LCD, a lower electrode of a storage capacitor is made to include an element in group


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Shunpei Yamazaki: Electro-optical device and method for manufacturing the same. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, October 3, 2006: US07115902 (133 worldwide citation)

An electro-optical device and a method for manufacturing the same are disclosed. The device comprises a pair of substrates and an electro-optical modulating layer (e.g. a liquid crystal layer having sandwiched therebetween, said pair of substrates consisting of a first substrate having provided ther ...


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Shunpei Yamazaki: Electro-optical device. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, June 27, 2006: US07067844 (130 worldwide citation)

An electro-optical device is disclosed. The device comprises a pair of substrates and an electro-optical modulating layer (e.g. a liquid crystal layer) having sandwiched therebetween, said pair of substrates consisting of a first substrate having provided thereon a plurality of gate wires, a plurali ...


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Shunpei Yamazaki: Electro-optical device and method for manufacturing the same. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, August 29, 2006: US07098479 (126 worldwide citation)

An electro-optical device and a method for manufacturing the same are disclosed. The device comprises a pair of substrates and an electro-optical modulating layer (e.g. a liquid crystal layer having sandwiched therebetween, said pair of substrates consisting of a first substrate having provided ther ...


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Shunpei Yamazaki: Semiconductor device and manufacturing method thereof. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, March 18, 2003: US06534826 (126 worldwide citation)

A semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided.


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Toru Takayama, Junya Maruyama, Mayumi Mizukami, Shunpei Yamazaki: Semiconductor device and peeling off method and method of manufacturing semiconductor device. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, April 9, 2013: US08415208 (120 worldwide citation)

The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal laye ...