1
Victor A K Temple: Semiconductor devices exhibiting minimum on-resistance. General Electric Company, Robert Ochis, James C Davis Jr, Marvin Snyder, July 10, 1990: US04941026 (275 worldwide citation)

An improved conductivity vertical channel semiconductor device includes an insulated gate electrode disposed adjacent a substantial portion of the voltage supporting region. In response to an appropriate bias, the control electrode couples to the electric field originating on charges within the volt ...


2
Hsueh Rong Chang, Bantval J Baliga, Tat Sing P Chow: Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method. General Electric Company, Robert Ochis, James C Davis Jr, Marvin Snyder, January 31, 1989: US04801986 (204 worldwide citation)

A power field effect device has a gate grid having a plurality of elongate openings therein through which a base region forming a high voltage blocking junction with the underlying body was diffused. The openings have round ends in order to prevent the formation of spherical portions in the high vol ...


3
Lawrence E Tannas Jr: Transparent keyboard switch and array. Rockwell International Corporation, H Fredrick Hamann, G Donald Weber Jr, Robert Ochis, April 12, 1977: US04017848 (138 worldwide citation)

A transparent keyboard switch which is suitable for use in switch arrays is disclosed. Switch nomenclature may be positioned behind the switch and viewed from in front of the switch. The transparent switch comprises a relatively rigid electrically insulating transparent substrate having a "lower" el ...


4
Hsueh Rong Chang: Trench gate structure with thick bottom oxide. General Electric Company, Robert Ochis, James C Davis Jr, Marvin Snyder, February 12, 1991: US04992390 (111 worldwide citation)

Improved trench gate field effect devices are provided by forming a thick oxide at the bottom of the trench. This thick oxide may be preferably formed by ion implantation into the bottom of the trench.


5
Charles W Eichelberger, Robert J Wojnarowski, Kenneth B Welles II: Adaptive lithography system to provide high density interconnect. General Electric Company, Robert Ochis, James C Davis Jr, Marvin Snyder, May 30, 1989: US04835704 (109 worldwide citation)

An adaptive method and system are disclosed for providing high density interconnections of very large scale integrated circuits on a substrate. The procedure is performed in four basic steps: first an artwork representation for the interconnections of the integrated circuits is generated. This artwo ...


6
Victor A K Temple: Insulated gate semiconductor device with extra short grid and method of fabrication. General Electric Company, Robert Ochis, James C Davis Jr, Marvin Snyder, April 11, 1989: US04821095 (102 worldwide citation)

An improved insulated gate semiconductor device is provided with an extra short grid region of one type conductivity disposed proximate the PN junction between the first and second regions of the device. The extra short grid region provides an alternate path for one type conductivity carriers to inh ...


7
Richard L Pryor, William M Cowhig: Hierarchical, computerized design of integrated circuits. RCA Corporation, Joseph S Tripoli, Robert L Troike, Robert Ochis, September 16, 1986: US04612618 (98 worldwide citation)

High gate count integrated circuits (ICs) are designed in a heirarchical manner. In a first pass through a computer design system basic cells are composed to form one-level-up building block cells. In a second pass through the same computer design system the one-level-up building block cells are use ...


8
Bantval J Baliga, Tat Sing P Chow, Hsueh Rong Chang: Vertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating area. General Electric Company, Robert Ochis, James C Davis Jr, Marvin Snyder, April 18, 1989: US04823176 (93 worldwide citation)

A power field effect device has a high voltage blocking junction which intersects the device surface under the gate electrode. That intersection is a closed plane geometric figure whose center is within the body region of the device rather than in the more heavily doped base region of the device. Th ...


9
Eugene E Pentecost: Integrated automatic ranging device for optical instruments. Rockwell International Corporation, H Fredrick Hamann, G Donald Weber Jr, Robert Ochis, January 25, 1977: US04004852 (88 worldwide citation)

An automatic ranging device for optical instruments focuses two images of at least a portion of the field of view of the instrument on an array of photosensitive cells. The electronic output of the individual cells is related to the intensity of the light impinging thereon. The electronic output cor ...


10
Khai D T Ngo, Robert L Steigerwald, John P Walden, Bantval J Baliga, Charles S Korman, Hsueh Rong Chang: Low noise, high frequency synchronous rectifier. General Electric Company, Robert Ochis, James C Davis Jr, Marvin Snyder, February 20, 1990: US04903189 (86 worldwide citation)

A synchronous rectifier is able to operate at higher frequencies and provides an output having lower noise than prior art FET synchronous rectifier system by using field effect switching devices which contain only one conductivity type of semiconductor material and connecting a high speed, low charg ...