1
Robert M Wallace, Richard A Stoltz, Glen D Wilk: Zirconium and/or hafnium oxynitride gate dielectric. Texas Instruments Incorporated, David Denker, Robby T Holland, Richard L Donaldson, January 11, 2000: US06013553 (282 worldwide citation)

A field effect semiconductor device comprising a high permittivity zirconium (or hafnium) oxynitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A zirconium oxynitride gat ...


2
Robert M Wallace, Richard A Stoltz, Glen D Wilk: Zirconium and/or hafnium silicon-oxynitride gate dielectric. Texas Instruments Incorporated, David Denker, Robby T Holland, Richard L Donaldson, February 1, 2000: US06020243 (227 worldwide citation)

A field effect semiconductor device comprising a high permittivity zirconium (or hafnium) silicon-oxynitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A zirconium silico ...


3
Xiaolin Lu: MDSL host interface requirement specification. Texas Instruments Incorporated, C Alan McClure, Robby T Holland, Richard L Donaldson, June 8, 1999: US05910970 (176 worldwide citation)

A modem that operates selectively in the voice-band frequency band and higher frequency bands is provided. This modem supports multiple line codes, like DMT and CAP. The modem uses a Digital Signal Processor (DSP), so that different existing ADSL line codes, such as Discrete MultiTone (DMT) and Carr ...


4
Peter N Ehlig, Frederic Boutaud: Devices and method for generating and using systems, software waitstates on address boundaries in data processing. Texas Instruments Incorporated, Robby T Holland, Rene E Grossman, Richard L Donaldson, October 13, 1992: US05155812 (163 worldwide citation)

A data processing device is used with peripheral devices having addresses and differing communication response periods. The data processing device includes a digital processor adapted for selecting different ones of the peripheral devices by asserting addresses of each selected peripheral device. Ad ...


5
Michael A Lamson, Darvin R Edwards: Integrated circuit device having bumped power supply buses over active surface areas and method of manufacture thereof. Texas Instruments Incorporated, Robby T Holland, N Rhys Merrett, Melvin Sharp, January 21, 1992: US05083187 (152 worldwide citation)

An integrated circuit device is disclosed. In one embodiment, the device has a semiconductor chip having an electrical circuit that is connected to a bonding pad. A metal layer overlies the bonding pad, and a metal bump is connected to the metal layer. The metal bump receives power for the electrica ...


6
Shahin Golshan, Craig A St Martin, Craig W Rhodine: Configuration and method for positioning semiconductor device bond pads using additional process layers. Texas Instruments Incorporated, Robby T Holland, Wade James Brady II, Richard L Donaldson, January 24, 1995: US05384488 (142 worldwide citation)

A semiconductor chip (12) includes a plurality of bond pads (16). A plurality of bond shelves (28) are located along opposed end edges (20, 22) of the chip (12). The bond pads (16) are oriented in selected areas remote from the bond shelves (28). A via (42) is formed through an insulating layer (38) ...


7
Theodore W Houston, Patrick W Bosshart: Memory with storage cells having SOI drive and access transistors with tied floating body connections. Texas Instruments Incorporated, Robby T Holland, Carlton H Hoel, Richard L Donaldson, August 24, 1999: US05943258 (129 worldwide citation)

An integrated circuit (10). The integrated circuit comprises a first SOI transistor (AT3) having a body and for performing first function. The integrated circuit further comprises a second SOI transistor (DT3) having a body and for performing a second function different than the first function. Last ...


8
Benjamin C Diem, M Dwayne Ward: Serial to parallel and parallel to serial architecture for a RAM based FIFO memory. Texas Instruments Incorporated, Robby T Holland, Wade James Brady II, Richard L Donaldson, February 11, 1997: US05602780 (125 worldwide citation)

A FIFO memory (4) provides serial to parallel and parallel to serial data conversion. A read frame buffer (40) and a write frame buffer (30) are coupled with a RAM array (22). Serial input data is stored temporarily into the write frame (30) of fixed width, n bits wide. Then, the entire n bit wide f ...


9
Jan Paul Vander Wagt, Hao Tang: Resonant tunneling memory. Texas Instruments Incorporated, Robby T Holland, Carl H Hoel, Richard L Donaldson, February 9, 1999: US05869845 (122 worldwide citation)

A resonant tunneling diode stack used as a memory cell stack (X0-Xn) with sequential read out of bits of data cells (X1-Xn) by increasing ramp rates to transfer the stored bit to a lowest ramp rate cell (X0).


10
Thomas Flaxl: Identification system reader with multiplexed antennas. Texas Instruments Incorporated, Robby T Holland, James C Kesterson, Richard L Donaldson, March 17, 1998: US05729236 (108 worldwide citation)

An electronic system 8 is disclosed herein. The system includes circuitry 10 for processing a signal and a plurality of antennas 12a-12b. A plurality of switches 22a-22b are also included. Each of the switches 22a-22b is coupled between the processing circuitry 10 and a corresponding one of the ante ...