1
William S Carter: Configurable logic element. Xilinx, Alan H MacPherson Richard Franklin Edel M Young, November 10, 1987: US04706216 (470 worldwide citation)

A configurable logic circuit achieves versatility by including a configurable combinational logic element, a configurable storage circuit, and a configurable output select logic. The input signals to the configurable combinational logic element are input signals to the configurable logic circuit and ...


2
William S Carter: Special interconnect for configurable logic array. Xilinx, Alan H MacPherson, Steven F Caserza, Richard Franklin, February 10, 1987: US04642487 (401 worldwide citation)

A special interconnect circuit which connects adjacent configurable logic elements (CLEs) in a configurable logic array (CLA) without using the general interconnect structure of the CLA. In one embodiment, an array of CLEs is arranged in rows and columns and a special vertical lead circuit is provid ...


3
David D Thornburg, George M White III: Simplified touch tablet data device. Koala Technologies Corporation, Alan H MacPherson, Steven F Caserza, Richard Franklin, February 11, 1986: US04570149 (131 worldwide citation)

A touch tablet is provided containing two sheets of insulating material each of which contains a plurality of spaced apart conductive lines. A resistive strip on each sheet contacts and connects electrically one end of each of the plurality of conductive lines on that sheet. Each resistive strip fun ...


4
W Thomas Novak: Lithography system. Micronix Partners, Thomas S MacDonald, Alan H MacPherson, Richard Franklin, April 30, 1985: US04514858 (82 worldwide citation)

A lithography system for X-ray or other beam printing on a substrate such as a silicon semiconductor wafer comprises a beam chamber (301), a beam source (302), means (309) for mounting a mask, means (308) for mounting an image sensing means (342) interiorly of the chamber, means (317, 318), for moun ...


5
Eliyahou Harari: Highly scalable dynamic RAM cell with self-signal amplification. Alan H MacPherson, Steven F Caserza, Richard Franklin, May 15, 1984: US04448400 (80 worldwide citation)

A dynamic RAM memory cell comprises an MOS read transistor whose conductivity state is determined by the state of charge on a first electrode overlying the read transistor channel region. The first electrode is connected through a buried contact opening to a diffused region in the substrate. This di ...


6
W Thomas Novak: Lithography system. Micronix Partners, Thomas S MacDonald, Alan H MacPherson, Richard Franklin, May 7, 1985: US04516253 (78 worldwide citation)

A lithography system for X-ray or other beam printing on a substrate such as a silicon semiconductor wafer comprises a beam chamber (301), a beam source (302), means (309) for mounting a mask, means (308) for mounting an image sensing means (342) interiorly of the chamber, means (317, 318), for moun ...


7
Gideon Amir, Roubik Gregorian, Ghanshyam Dujari: Multiplier/adder circuit. American Microsystems, Alan H MacPherson, Steven F Caserza, Richard Franklin, December 20, 1983: US04422155 (72 worldwide citation)

This invention provides a uniquely designed switched capacitor multiplier/adder (129) which also functions as a digital-to-analog converter in a single subcircuit. The multiplier/adder, in a single operation, multiplies an analog voltage by a binary coefficient, and sums this product with a second a ...


8
Vishwas R Godbole: Bandwidth reduction method and structure for combining voice and data in a PCM channel. American Microsystems, Alan H MacPherson, Steven F Caserza, Richard Franklin, March 22, 1983: US04377860 (69 worldwide citation)

In the present invention, analog voice information is sampled at a first sampling rate, during periods when voice information is to be transmitted at a frequency which provides a digitized voice rate equal to the transmission rate capability of the transmission channel. During periods when both voic ...


9
Boaz Eitan: Self-aligned split gate EPROM. Wafer Scale Integration, Alan H MacPherson, Steven F Caserza, Richard Franklin, January 27, 1987: US04639893 (64 worldwide citation)

A self-aligned split gate single transistor memory cell structure is formed by a process which self aligns the drain region to one edge of a floating gate. The portion of the channel underneath the floating gate is accurately defined by using one edge of the floating gate to align the drain region. ...


10
Eliyahou Harari: Non-volatile eprom with increased efficiency. Alan H MacPherson, Steven F Caserza, Richard Franklin, May 4, 1982: US04328565 (63 worldwide citation)

The floating gate in an N channel EPROM cell extends over the drain diffusion and over a portion of the channel thereby to form a "drain" capacitance between the drain and the floating gate and a "channel" capacitance between the channel and the floating gate. A control gate overlaps the floating ga ...