21
Josef Willer, Herbert Palm: NROM memory circuit with recessed bitline. Ingentix & Co KG, Laurence A Greenberg, Werner H Stemer, Ralph E Locher, August 17, 2004: US06777725 (77 worldwide citation)

An integrated memory circuit of the type of an NROM memory includes recessed bit lines formed of a material having a low ohmic resistance. By recessing the bit lines with respect to the semiconductor substrate surface of a peripheral controlling circuit for an array of memory cells allows to form th ...


22
Robert Aigner, Stephan Marksteiner: Piezoresonator. Infineon Technologies, Laurence A Greenberg, Werner H Stemer, Ralph E Locher, March 18, 2003: US06534900 (75 worldwide citation)

A thin film piezoresonator, which can be tuned over a wide range of RF frequencies, includes a piezo layer between a first electrode layer and a second electrode layer. An electroactive layer of an electrostrictive material, which experiences a mechanical deformation when an electrical voltage is ap ...


23
Martin Bertele, Robert Oyrer, Rainald Sander: Circuit configuration having a semiconductor switch and a protection circuit. Infineon Technologies, Laurence A Greenberg, Werner H Stemer, Ralph E Locher, January 2, 2007: US07158359 (74 worldwide citation)

A circuit configuration has a first semiconductor switch and a first protection circuit. The protection circuit has a second semiconductor switch whose load path is connected between a control terminal and a load path terminal of the first semiconductor switch. The second semiconductor switch is swi ...


24
Michael Kelly, Oliver Ambacher, Martin Stutzmann, Martin Brandt, Roman Dimitrov, Robert Handschuh: Method of separating two layers of material from one another. Siemens Aktiengesellschaft, Laurence A Greenberg, Werner H Stemer, Ralph E Locher, May 25, 2004: US06740604 (73 worldwide citation)

A method of separating two layers of material from one another in such a way that the two separated layers of material are essentially fully preserved. An interface between the two layers of material at which the layers of material are to be separated, or a region in the vicinity of the interface, i ...


25
Bruno Fürbacher, Friedrich Lupp, Wolfgang Pahl, Günter Trausch: Method for producing an encapsulation for a SAW component operating with surface acoustic waves. Siemens Matsushita Components & Co KG, Laurence A Greenberg, Werner H Stemer, Ralph E Locher, September 10, 2002: US06446316 (67 worldwide citation)

An encapsulation for SAW components and a method for producing the encapsulation use a cap to seal component structures on a substrate. The cap is in the form of a cover on the substrate and has cutouts which accommodate the component structures in regions of the component structures.


26
Albert Auburger, Frank Klose, Rudolf Lehner, Horst Theuss: Radio-frequency power component, radio-frequency power module, method for producing a radio-frequency power component, and method for producing a radio-frequency power module. Infineon Technologies, Laurence A Greenberg, Werner H Stemer, Ralph E Locher, March 15, 2005: US06867492 (66 worldwide citation)

A radio-frequency power component and a radio-frequency power module, as well as to methods for producing them are encompassed. The radio-frequency power component has a semiconductor chip that is suitable for flip chip mounting. The semiconductor chip has an active upper face that produces power lo ...


27
Ralf Henninger, Franz Hirler, Joachim Krumrey, Markus Zundel, Walter Rieger, Martin Pölzl: Semiconductor component with an increased breakdown voltage in the edge area. Infineon Technologies, Laurence A Greenberg, Werner H Stemer, Ralph E Locher, October 19, 2004: US06806533 (66 worldwide citation)

A semiconductor component has a cell array formed in a semiconductor body with a number of identical transistor cells and at least one edge cell formed at an edge of the cell array. Each of the transistor cells has a control electrode, which is formed in a trench, and the edge cell has a field plate ...


28
Jens Barrenscheen, Gunther Fenzl: Program-controlled unit. Infineon Technologies, Laurence A Greenberg, Werner H Stemer, Ralph E Locher, June 5, 2007: US07228264 (65 worldwide citation)

A program-controlled unit includes a selection device which can determine whether the program-controlled unit is to be emulated by using a first emulation unit or by using a second emulation unit. As a result, it is possible to provide a mass production version of the program-controlled unit with an ...


29
Paul Werner Von Basse, Josef Willer: Method of determining very small capacitances. Micronas, Laurence A Greenberg, Werner H Stemer, Ralph E Locher, June 24, 2003: US06583632 (65 worldwide citation)

A grid of capacitor surfaces is connected to read lines and control lines. The read lines are connected alternately to the output of a feedback operational amplifier and to a collecting capacitor. The capacitances to be measured are charged repeatedly and the charges are collected on the collecting ...


30
Stefan Dietrich, Peter Schrögmeier, Sabine Kieser, Christian Weis: Circuit configuration with a memory array. Infineon Technologies, Laurence A Greenberg, Werner H Stemer, Ralph E Locher, September 2, 2003: US06614700 (65 worldwide citation)

The circuit configuration has a memory array, a memory access controller, a control unit, and an input/output circuit. The control unit outputs a control signal simultaneously to the memory access controller and to the input/output circuit. When the control signal is received, the input/output circu ...