1
Dan Maydan, Sasson Somekh, David N Wang, David Cheng, Masato Toshima, Isaac Harari, Peter D Hoppe: Multi-chamber integrated process system. Applied Materials, Philip A Dalton, August 28, 1990: US04951601 (723 worldwide citation)

An integrated modular multiple chamber vacuum processing system is disclosed. The system includes a load lock, may include an external cassette elevator, and an internal load lock wafer elevator, and also includes stations about the periphery of the load lock for connecting one, two or several vacuu ...


2
David N Wang, John M White, Kam S Law, Cissy Leung, Salvador P Umotoy, Kenneth S Collins, John A Adamik, Ilya Perlov, Dan Maydan: Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process. Applied Materials, Robert J Stern, Philip A Dalton, March 19, 1991: US05000113 (566 worldwide citation)

A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple s ...


3
Avi Tepman, Howard Grunes, Sasson Somekh, Dan Maydan: Staged-vacuum wafer processing system and method. Applied Materials, Philip A Dalton, February 16, 1993: US05186718 (472 worldwide citation)

A processing system for workpieces such as semiconductor wafers is disclosed which incorporates multiple, isolated vacuum stages between the cassette load lock station and the main vacuum processing chambers. A vacuum gradient is applied between the cassette load lock and the main processing chamber ...


4
David N Wang, John M White, Kam S Law, Cissy Leung, Salvador P Umotoy, Kenneth S Collins, John A Adamik, Ilya Perlov, Dan Maydan: Process for PECVD of silicon oxide using TEOS decomposition. Applied Materials, Philip A Dalton, January 9, 1990: US04892753 (292 worldwide citation)

A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple s ...


5
Kam S Law, Cissy Leung, Ching C Tang, Kenneth S Collins, Mei Chang, Jerry Y K Wong, David Nin Kou Wang: Reactor chamber self-cleaning process. Applied Materials, Philip A Dalton, October 2, 1990: US04960488 (281 worldwide citation)

A process for cleaning a reactor chamber both locally adjacent the RF electrodes and also throughout the chamber and the exhaust system to the including components such as the throttle valve. Preferably, a two-step continuous etch sequence is used in which the first step uses relatively high pressur ...


6
David N Wang, John M White, Kam S Law, Cissy Leung, Salvador P Umotoy, Kenneth S Collins, John A Adamik, Ilya Perlov, Dan Maydan: Plasma-enhanced CVD process using TEOS for depositing silicon oxide. Applied Materials, Philip A Dalton, Robert J Stern, November 8, 1994: US05362526 (254 worldwide citation)

A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple s ...


7
Kenneth J Schmier, Paul Freda: Public transit vehicle arrival information system. Philip A Dalton, December 21, 1999: US06006159 (211 worldwide citation)

A system for notifying passengers waiting for public transit vehicles of the status of the vehicles, including the arrival times of vehicles at stops. The system includes global position determining devices located in the vehicles for determining the location of the vehicles along their routes. A ce ...


8
David Cheung, Peter Keswick, Jerry Wong: Reactor chamber self-cleaning process. Applied Materials, Philip A Dalton, October 27, 1992: US05158644 (128 worldwide citation)

A reactor chamber self-cleaning process is disclosed which uses a fluorocarbon-containing gas and, preferably, C.sub.2 F.sub.6 in combination with oxygen. The two-step process involves, first, a chamber-wide etch at relatively low pressure and with relatively large separation between the gas inlet m ...


9
Dianne J Pollard: Bumper sheet. Philip A Dalton, October 17, 1989: US04873734 (84 worldwide citation)

A bumper sheet includes an array of pockets in which relatively soft yet form-retaining inserts (such as foam plastic cylinders or inflatable bladders) are removably fitted to define a bumper area enclosing a sleeping or rest area within the confines of a crib, bed rails or the like.


10
Dan Maydan, Sasson R Somekh, Charles Ryan Harris, Richard A Seilheimer, David Cheng, Edward M Abolnikov, Lance S Reinke, J Christopher Moran, Richard M Catlin Jr, Robert B Lowrance, Gregory W Ridgeway: Semiconductor processing system with robotic autoloader and load lock. Applied Materials, Philip A Dalton, March 27, 1990: US04911597 (69 worldwide citation)

A wafer processing system includes an autoloader mounted within a load lock for providing batch, cassette-to-cassette automatic wafer transfer between the semiconductor processing chamber and cassette load and unload positions within the load lock. The system provides rapid, contamination-free loadi ...