1
Erwin Meinders
Martijn Henri Richard Lankhorst, Franciscus Petrus Widdershoven, Robertus Adrianus Maria Wolters, Wilhelmus Sebastianus Marcus Maria Ketelaars, Erwin Rinaldo Meinders: Electric device with phase change material and method of manufacturing the same. Koninklijke Phillips Electronics, Peter Zawilski, October 10, 2006: US07119353 (15 worldwide citation)

The electric device (100) has a body (102) having a resistor (107) comprising a phase change material being changeable between a first phase and a second phase. The resistor (107) has a first electrical resistance when the phase change material is in the first phase, and a second electrical resistan ...


2
Erwin Meinders
Martijn Henri Richard Lankhorst, Erwin Rinaldo Meinders, Robertus Adrianus Maria Wolters, Franciscus Petrus Widdershoven: Electric device with phase change material and parallel heater. NXP, Peter Zawilski, December 11, 2007: US07307267 (7 worldwide citation)

The electric device (1, 100) has a body (2, 102) having a resistor (7, 107) comprising a phase change material being changeable between a first phase and a second phase. The resistor (7, 107) has a first electrical resistance when the phase change material is in the first phase and a second electric ...


3
Jean Francois Duboc, Romain Oddoart: Enhanced programmable core model with integrated graphical debugging functionality. Koninklijke Philips Electronics, Peter Zawilski, July 1, 2003: US06587995 (173 worldwide citation)

An apparatus, program product and method incorporate into an enhanced programmable core model an embedded debug monitor to provide integrated graphical debugging functionality in the model. The debug monitor supports the performance of one or more debug operations on the programmable core model duri ...


4
Roland van der Tuijn: Communication systems, communication methods and a method of communicating data within a DECT communication system. Koninklijke Phillips Electronics, Peter Zawilski, June 25, 2002: US06411611 (131 worldwide citation)

The present invention includes communication systems, communication methods and a method of communicating data within a DECT communication system. One embodiment of the present invention provides a communication system including a radio having a synthesizer operable to generate a carrier signal resp ...


5
Kim Le Phan: MRAM architecture for low power consumption and high selectivity. NXP, Peter Zawilski, October 2, 2007: US07277317 (126 worldwide citation)

The present invention provides a magnetoresistive memory cell (30), comprising a magnetoresistive memory element (31), a first current line (32) and a second current line (33), the first and the second current line (32, 33) crossing each other at a cross-point region but not being in direct contact. ...


6
Franciscus Petrus Widdershoven, Michiel Jos Van Duuren: Self-aligned 2-bit “double poly CMP” flash memory cell. NXP, Peter Zawilski, May 8, 2007: US07214579 (93 worldwide citation)

Fabrication of a memory cell, the cell including a first floating gate stack (A), a second floating gate stack (B) and an intermediate access gate (AG), the floating gate stacks (A, B) including a first gate oxide (4), a floating gate (FG), a control gate (CG; CGl, CGu), an interpoly dielectric laye ...


7
Adrianus Alphonsus Jozef Buijsman, Johannes Maria Cornelis Verspeek, Antonius Johannes Matheus de Graauw: Module and electronic device. Koninklijke Philips Electronics, Peter Zawilski, March 1, 2005: US06861731 (88 worldwide citation)

A radio module (10) suitable for RF applications, especially for Bluetooth, comprises a substrate (1) with a semiconductor device (11), a shield (21), and an antenna (31). The shield (21) is located between the antenna (31) and the semiconductor device (11), and is present on the same side (2) of th ...


8
Radu Catalin Surdeanu, Youri Ponomarev: Method of fabricating a double gate field effect transistor device, and such a double gate field effect transistor device. NXP, Peter Zawilski, April 21, 2009: US07521323 (88 worldwide citation)

The present invention discloses a method of forming a double gate field effect transistor device, and such a device formed with the method. One starts with a semiconductor-on-insulator substrate, and forms a first gate, source, drain and extensions, and prepares the second gate. Then the substrate i ...


9
Franklyn Hayward Story, Jerry Michael Rose, D C Sessions, Paul Reeves Auvil III: System bus with a variable width selectivity configurable at initialization. Koninklijke Philips Electronics, Peter Zawilski, August 13, 2002: US06434654 (80 worldwide citation)

A low pin count, moderate speed serial data bus that has a variable width for the transfer of data between devices of a computer system. The serial data bus can be selectively configured to be 1-bit, 4-bit, 8-bit or 16-bit wide. Data (including bus commands and addresses) carried by wider parallel b ...


10
Kenneth S Gray: Memory redundancy techniques. Koninklijke Philips Electronics, Peter Zawilski, November 19, 2002: US06484271 (75 worldwide citation)

A redundant memory system includes an address bus, a random access memory, a content addressable memory, a replacement memory, and a data bus. The random access memory includes a number of addressable memory locations each accessed by a different one of a number of addresses provided by the address ...



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