1
David J Harra: Apparatus for thermal treatment of semiconductor wafers by gas conduction incorporating peripheral gas inlet. Varian Associates, Stanley Z Cole, Norman E Reitz, April 23, 1985: US04512391 (92 worldwide citation)

An apparatus for the uniform thermal treatment of semiconductor wafers by gas conduction holds the wafer in place over a gas filled cavity in opposition to a thermal mass maintained at an appropriate temperature. Gas is introduced behind the semiconductor wafer adjacent its periphery to produce a ne ...


2
Ronald A Faretra: Apparatus for mechanically clamping semiconductor wafer against pliable thermally conductive surface. Varian Associates, Stanley Z Cole, Norman E Reitz, August 11, 1981: US04282924 (71 worldwide citation)

An apparatus for providing active cooling for semiconductor wafers during implantation in an ion implantation chamber includes a housing incorporating a convexly curved platen. The platen has a coating of a pliable thermally conductive material adhered to the surface thereof. A clamping ring is moun ...


3
Harald A Enge: Focusing apparatus for uniform application of charged particle beam. Varian Associates, Stanley Z Cole, Norman E Reitz, June 30, 1981: US04276477 (62 worldwide citation)

An apparatus for performing double deflection scanning of charged particle beams utilizes a means for introducing variations in the angle of the charged particle beam in combination with the focal or optical properties of a sector magnet. The means for introducing angular variations receives a charg ...


4
Paul F Petric: Charged particle beam lithography machine incorporating localized vacuum envelope. Varian Associates, Stanley Z Cole, Norman E Reitz, William R McClellan, August 19, 1986: US04607167 (60 worldwide citation)

A charged particle beam lithography machine includes a beam source and beam steering and forming elements within an evacuated column. A stage assembly for supporting a semiconductor wafer or mask is positioned in ambient and proximate the exit end of said beam steering and forming elements. A vacuum ...


5
Frank J Yang: Narrow bore micro-particulate column packing process and product. Varian Associates, Stanley Z Cole, Keiichi Nishimura, Norman E Reitz, November 20, 1984: US04483773 (56 worldwide citation)

A process for packing narrow bore chromatographic columns and the resulting product are provided. A flexible column, preferably of fused silica, of inner diameter less than 500 .mu.m is selected. A slurry is formed in a reservoir from a mobile solvent and particles of specified diameter. For liquid ...


6
Daniel F Downey, George T Lecouras: End point detection method for physical etching process. Varian Associates, Stanley Z Cole, Norman E Reitz, November 9, 1982: US04358338 (51 worldwide citation)

A method for determining the end point for a physical etching process step measures the current at the target being etched and detects changes in the current. Changes in the current measured at the target are indicative of transitions between dissimilar materials or of depth of penetration in a part ...


7
Raphael Bustin: Zero reference and offset compensation circuit. Varian Associates, Stanley Z Cole, Norman E Reitz, October 21, 1980: US04229703 (49 worldwide citation)

A zero reference and offset compensation circuit for an operational amplifier operating in the inverting mode in order to correct for both current and voltage offset errors. The zero reference and offset compensation circuit includes comparators for comparing the zero condition output of the operati ...


8
Peter G Borden: Monolithic series-connected solar cell. Varian Associates, Stanley Z Cole, Norman E Reitz, July 14, 1981: US04278473 (47 worldwide citation)

A monolithic series-connected solar cell comprises a series of cells each having a mesa-like structure which is electrically interconnected from the top of each cell to a contact ledge formed in the base region of the adjoining cell. The individual cells are supported on an insulating substrate. The ...


9
Bruce E Deal, Daniel C Hu: Complementary insulated gate field effect transistor structure and process for fabricating the structure. Fairchild Camera and Instrument Corporation, Alan H MacPherson, Henry K Woodward, Norman E Reitz, June 7, 1977: US04027380 (39 worldwide citation)

A complementary insulated gate field effect transistor structure having complementary p-channel and n-channel devices in the same semiconductor substrate and a process for fabricating the structure incorporate oxide isolation of the active device regions, counterdoping of the p-well with impurities ...


10
Howard E Murphy: High voltage transient protection circuit for voltage regulators. Fairchild Camera and Instrument Corporation, Alan H MacPherson, Henry K Woodward, Norman E Reitz, February 15, 1977: US04008418 (38 worldwide citation)

A high-voltage transient protection circuit for use in combination with a voltage regulator of the type employing an error amplifier to compare a portion of the controlled output voltage against a reference voltage and adjust the output voltage accordingly. The protection circuit can be used with th ...



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