1
Graham S Tubbs: Turn-off-processor between keystrokes. Texas Instruments Incorporated, Rene E Grossman, Leo N Heiting, Mel Sharp, October 11, 1983: US04409665 (139 worldwide citation)

A calculator having constant memory utilizing a classical CMOS metal gate process, a low power microcomputer with on-chip and external constant memory capability, and multiple partition power control of circuit groups. Incorporation of a first and second switched negative voltage and a non-switched ...


2
Charles T Hemphill, Frank Vlach: System and method for parsing natural language by unifying lexical features of words. Texas Instruments Incorporated, L Joy Griebenow, James T Comfort, Mel Sharp, January 21, 1992: US05083268 (129 worldwide citation)

A method for parsing for natural languages includes a grammar and a lexicon. A knowledge base may be used to define elements in the lexicon. A processor receives single words input by a user and adds them to a sentence under construction. Valid next words are predicted after each received input word ...


3
Granville E Ott: Optical system for projection display using spatial light modulator device. Texas Instruments Incorporated, Carlton H Hoel, Leo Heiting, Mel Sharp, July 14, 1987: US04680579 (108 worldwide citation)

The projection display of the present invention employs a light source, a spatial light modulator such as a deformable mirror device having a plurality of individually electrically deformable mirror cells and Schlierin optics to project light from deformed mirror cells onto a viewing screen. An opti ...


4
Patrick A Curran: Method of making a heterojunction bipolar transistor with SIPOS. Texas Instruments Incorporated, Gary C Honeycutt, N Rhys Merrett, Mel Sharp, January 5, 1988: US04717681 (105 worldwide citation)

A wafer process flow encompasses an arbitray repeated layered structure of heteroepitaxial layers of silicon based films with process control throughout the strata of chemical potential and recombination velocity, suitable for both high performance MOS and bipolar transistors with three dimensional ...


5
Stephen P Hamilton, Arthur C Hunter: Memory system having a common interface. Texas Instruments Incorporated, Rene E Grossman, Leo N Heiting, Mel Sharp, April 17, 1984: US04443845 (96 worldwide citation)

A data processing system having separate read-only memory and read-write memory integrated circuits coupled to a central processing unit via the same interface system. The data processing system is comprised of bus means having either command, address, or data signals present and conducted thereon. ...


6
Marco Venturini: Direct AC converter for converting a balanced AC polyphase input to an output voltage. Texas Instruments Incorporated, N Rhys Merrett, Mel Sharp, August 28, 1984: US04468725 (67 worldwide citation)

A direct AC converter for converting a polyphase AC input supply into an output DC or single or polyphase AC supply of amplitude, phase, frequency or power factor which is different from the input supply using a matrix of bidirectional switches having contiguous width modulated conduction periods in ...


7
Lee R Reid: Method of forming a three dimensional integrated circuit structure. Texas Instruments Incorporated, William E Hiller, N Rhys Merrett, Mel Sharp, September 4, 1990: US04954458 (62 worldwide citation)

A semiconductor circuit apparatus including several semiconductor substrates interconnected by having elevated portions of one substrate contacting the surface of the second substrate where both substrates include at least one electrical circuit. Also included is a method for forming this three dime ...


8
Richard A Chapman, Dennis D Buss, Michael A Kinch: Narrow band-gap semiconductor CCD imaging device and method of fabrication. Texas Instruments Incorporated, Gary C Honeycutt, Richard Donaldson, Mel Sharp, November 4, 1980: US04231149 (60 worldwide citation)

A monolithic charge-coupled infrared imaging device (CCIRID) is fabricated on N-type HgCdTe. A native oxide layer on the semiconductor is used, in combination with ZnS to provide first level insulation. An opaque field plate over first level insulation is provided for signal channel definition. Seco ...


9
Satwinder D S Malhi: Method of providing buried contacts for N and P channel devices in an SOI-CMOS process using a single N+polycrystalline silicon layer. Texas Instruments Incorporated, Mel Sharp, July 7, 1987: US04677735 (52 worldwide citation)

The disclosure relates to a method for realizing a fully functional buried level of interconnect using only a single level of a silicide over N+ polycrystalline silicon, the latter serving as the gate material for both the N channel and P channel devices formed.


10
Thomas E Tang, Che Chia Wei, Roger A Haken, Thomas C Holloway: Process to increase tin thickness. Texas Instruments Incorporated, Robert Groover III, James T Comfort, Mel Sharp, June 30, 1987: US04676866 (50 worldwide citation)

A local interconnect system for VLSI integrated circuits. During self-aligned silicidation of exposed moat and gate regions in a nitrogen atmosphere, a conductive titanium nitride layer is formed overall. A second titanium layer is then deposited overall and again reacted, to thicken the nitride lay ...