1
Standford R Ovshinsky, Wolodymyr Czubatyj, David A Strand, Patrick J Klersy, Sergey Kostylev, Boil Pashmakov: Memory element with memory material comprising phase-change material and dielectric material. Energy Conversion Devices, Philip H Schlazer, Marvin S Siskind, David W Schumaker, July 11, 2000: US06087674 (510 worldwide citation)

An electrically operated, single cell memory element comprising: a volume of memory material defining a single-cell memory element, the memory material comprising a heterogeneous mixture of a phase-change material and a dielectric material; and means for delivering an electrical signal to at least a ...


2
Stanford R Ovshinsky: Multibit single cell memory element having tapered contact. Energy Conversion Devices, David W Schumaker, Marvin S Siskind, Marc J Luddy, November 11, 1997: US05687112 (506 worldwide citation)

An electrically operated, directly overwritable, multibit, single-cell chalcogenide memory element with multibit storage capabilities and having at least one contact for supplying electrical input signals to set the memory element to a selected resistance value, the second contact tapering to a peak ...


3
Patrick J Klersy, David C Jablonski, Stanford R Ovshinsky: Thin-film structure for chalcogenide electrical switching devices and process therefor. Energy Conversion Devices, Marvin S Siskind, January 5, 1993: US05177567 (493 worldwide citation)

Disclosed herein is a novel thin-film structure for solid state thin-film electrical switching devices fabricated of chalcogenide material that overcomes a number of design weaknesses existing in the prior art. The novel structure of the instant invention employs a thin layer of insulating material ...


4
Stanford R Ovshinsky, David A Strand, Patrick Klersy: Electrically erasable memory elements characterized by reduced current and improved thermal stability. Energy Conversion Devices, David W Schumaker, Marvin S Siskind, Marc J Luddy, July 9, 1996: US05534712 (428 worldwide citation)

Disclosed herein is a solid state, directly overwritable, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, single cell memory element having reduced switching current requirements and an increased thermal stability of data retention. The memory element includes a ...


5
Jon Maimon, Patrick Klersy: Method for making small pore for use in programmable resistance memory element. Ovonyx, Philip H Schlazer, Marvin S Siskind, September 2, 2003: US06613604 (409 worldwide citation)

A method for making a small pore. The defined pore is useful for the fabrication of programmable resistance memory elements. The programmable resistance memory material may be a chalcogenide.


6
Jon Maimon, Andrew Pomerene: Method for making programmable resistance memory element using silylated photoresist. Ovonyx, Philip H Schlazer, Marvin S Siskind, July 8, 2003: US06589714 (378 worldwide citation)

A method of making a electrically operated programmable resistance memory element. A silylated photoresist sidewall spacer is used as a mask for form raised portions on an edge of a conductive layer. The modified conductive layer is used as an electrode for the memory element.


7
Patrick Klersy, Boil Pashmakov, Wolodymyr Czubatyj, Sergey Kostylev, Stanford R Ovshinsky: Memory element with energy control mechanism. Energy Conversion Devices, Philip H Schlazer, David W Schumaker, Marvin S Siskind, August 3, 1999: US05933365 (364 worldwide citation)

An electrically operated, directly overwritable memory element comprising a volume of memory material having at least two electrical resistance values. The volume of memory material can be set to one of the resistance values in response to a selected electrical input signal without the need to be se ...


8
Wolodymyr Czubatyj, Stanford R Ovshinsky, David A Strand, Patrick Klersy, Sergey Kostylev, Boil Pashmakov: Composite memory material comprising a mixture of phase-change memory material and dielectric material. Energy Conversion Devices, Marvin S Siskind, David W Schumaker, October 20, 1998: US05825046 (350 worldwide citation)

A composite memory material comprising a mixture of active phase-change memory material and inactive dielectric material. The phase-change material includes one or more elements selected from the group consisting of Te, Se, Ge, Sb, Bi, Pb, Sn, As, S, Si, P, O and mixtures or alloys thereof. A single ...


9
Stanford R Ovshinsky, Boil Pashmakov: Universal memory element and method of programming same. Energy Conversion Devices, Philip H Schlazer, Marvin S Siskind, David W Schumaker, June 15, 1999: US05912839 (314 worldwide citation)

Method of programming Ovonic memory multistate-digital multibit memory elements, and use thereof for neural networks and data storage. The device is programmed by applying an energy pulse which is insufficient to switch the memory element from said high resistance state to said low resistance state, ...


10
Stanford R Ovshinsky, Stephen J Hudgens, David A Strand, Wolodymyr Czubatyj, Jesus Gonzalez Hernandez, Hellmut Fritzsche, Qiuyi Ye, Sergey A Kostylev, Benjamin S Chao: Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements. Marvin S Siskind, August 2, 1994: US05335219 (311 worldwide citation)

A unique class of microcrystalline semiconductor materials which can be modulated, within a crystalline phase, to assume any one of a large dynamic range of different Fermi level positions while maintaining a substantially constant band gap over the entire range, even after a modulating field has be ...