1
Kyoichi Suwa: Projection exposure apparatus and method with workpiece area detection. Nikon Precision, Norman R Klivans, Mark E Schmidt, Skjerven Morrill MacPherson, February 20, 2001: US06191429 (540 worldwide citation)

Improvements in a focusing apparatus having an objective optical system for optically manufacturing a workpiece, forming a desired pattern on a surface of a workpiece or inspecting a pattern on a workpiece and used to adjust the state of focusing between the surface of the workpiece and the objectiv ...


2
Christopher H Lowery, Gerd Mueller, Regina Mueller: Red-deficiency-compensating phosphor LED. LumiLeds Lighting U S, Brian D Ogonowsky, Mark E Schmidt, Skjerven Morrill MacPherson, February 26, 2002: US06351069 (217 worldwide citation)

A light emitting device and a method of fabricating the device utilize a supplementary fluorescent material that radiates secondary light in the red spectral region of the visible light spectrum to increase the red color component of the composite output light. The secondary light from the supplemen ...


3
Gerd O Mueller, Regina B Mueller Mach: Phosphor converted light emitting diode. LumiLeds Lighting U S, Mark E Schmidt, Skjerven Morrill, July 9, 2002: US06417019 (161 worldwide citation)

A method of fabricating a light emitting device includes providing a light emitting diode that emits primary light, and locating proximate to the light emitting diode a (Sr


4
Carrie Carter Coman, R Scott Kern, Fred A Kish Jr, Michael R Krames, Arto V Nurmikko, Yoon Kyu Song: Methods for fabricating light emitting devices having aluminum gallium indium nitride structures and mirror stacks. LumiLeds Lighting U S, Mark E Schmidt, Skjerven Morrill, July 16, 2002: US06420199 (97 worldwide citation)

Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or ...


5
Carrie Carter Coman, R Scott Kern, Fred A Kish Jr, Michael R Krames, Arto V Nurmikko, Yoon Kyu Song: Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks. LumiLeds Lighting U S, Brian D Ogonowsky, Mark E Schmidt, Skjerven Morrill MacPherson, November 20, 2001: US06320206 (96 worldwide citation)

Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or ...


6
Michael R Krames, Fred A Kish Jr, Tun S Tan: LED having angled sides for increased side light extraction. Lumileds Lighting U S, Brian D Ogonowsky, Mark E Schmidt, Patent Law Group, May 27, 2003: US06570190 (69 worldwide citation)

The invention is a method for designing semiconductor light emitting devices such that the side surfaces (surfaces not parallel to the epitaxial layers) are formed at preferred angles relative to vertical (normal to the plane of the light-emitting active layer) to improve light extraction efficiency ...


7
R Scott Kern, Changhua Chen, Werner Goetz, Chihping Kuo: Strain engineered and impurity controlled III-V nitride semiconductor films and optoelectronic devices. LumiLeds Lighting U S, Brian D Ogonowsky, Mark E Schmidt, Skjerven Morrill MacPherson, February 27, 2001: US06194742 (67 worldwide citation)

In the present invention, an interfacial layer is added to a light-emitting diode or laser diode structure to perform the role of strain engineering and impurity gettering. A layer of GaN or Al


8
R Scott Kern, Changhua Chen, Werner Goetz, Chihping Kuo: Method of strain engineering and impurity control in III-V nitride semiconductor films and optoelectronic devices. LumiLeds Lighting U S, Mark E Schmidt, Brian D Ogonowsky, Skjerven Morrill MacPherson, August 14, 2001: US06274399 (47 worldwide citation)

In the present invention, an interfacial layer is added to a light-emitting diode or laser diode structure to perform the role of strain engineering and impurity gettering. A layer of GaN or Al


9
Reena Khare, Fred A Kish: Advanced semiconductor devices fabricated with passivated high aluminum content III-V materials. LumiLeds Lighting U S, Brian D Ogonowsky, Mark E Schmidt, Skjerven Morrill MacPherson, March 13, 2001: US06201264 (29 worldwide citation)

For AlGaAs LEDs the confining layers adjoining the active layer possess the highest Al composition. From failure analysis of non-passivated, WHTOL-aged, AlGaAs LEDs, it was discovered that corrosion occurs the fastest at the exposed surfaces of the high Al-content confining layers. By placing a high ...


10
Steven A Kasapi, Chun Cheng Tsao, Seema Somani: Differential pulsed laser beam probing of integrated circuits. Schlumberger Technologies, Norman R Klivans, Mark E Schmidt, Skjerven Morrill MacPherson, June 26, 2001: US06252222 (18 worldwide citation)

A laser beam is used to probe an integrated circuit device under test. A single laser provides a single laser pulse which is divided into two pulses, both of which are incident upon the device under test. After the two pulses interact with the device under test, the two pulses are separated and dete ...