1
Ravi Laxman
Chongying Xu, Thomas H Baum, Alexander S Borovik, Ziyun Wang, James T Y Lin, Scott Battle, Ravi K Laxman: Method for removal of impurities in cyclic siloxanes useful as precursors for low dielectric constant thin films. Advanced Technology Materials, Steven J Hultquist, Intellectual Property Technology Law, Margaret Chappuis, September 19, 2006: US07108771 (11 worldwide citation)

A process for reducing the level(s) of water and/or other impurities from cyclosiloxanes by either azeotropic distillation, or by contacting the cyclosiloxane compositions with an adsorbent bed material. The purified cyclosiloxane material is useful for forming low-dielectric constant thin films hav ...


2
Ravi Laxman
Ziyun Wang, Chongying Xu, Ravi K Laxman, Thomas H Baum, Bryan C Hendrix, Jeffrey F Roeder: Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride. Advanced Technology Materials, Steven J Hultquist, Hultquist IP, Margaret Chappuis, March 22, 2011: US07910765 (10 worldwide citation)

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon ...


3
Ravi Laxman
Ravi K Laxman, Chongying Xu, Thomas H Baum: Low-K dielectric thin films and chemical vapor deposition method of making same. Margaret Chappuis, ATMI, April 3, 2003: US20030064154-A1 (2 worldwide citation)

A CVD process for producing low-dielectric constant, SiOC thin films using organosilicon precursor compositions having at least one alkyl group and at least one cleavable organic functional group that when activated rearranges and cleaves as a highly volatile liquid or gaseous by-product. In a first ...


4
Ravi Laxman
Ziyun Wang, Chongying Xu, Ravi K Laxman, Thomas H Baum, Bryan C Hendrix, Jeffrey F Roeder: Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride. Advanced Technology Materials, Hultquist PLLC, Mary B Grant, Margaret Chappuis, April 10, 2012: US08153833

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon ...


5
Bruce Baretz, Michael A Tischler: Solid state white light emitter and display using same. Advanced Technology Materials, Steven J Hultquist, Margaret Chappuis, July 29, 2003: US06600175 (401 worldwide citation)

A light emitting assembly comprising a solid state device coupleable with a power supply constructed and arranged to power the solid state device to emit from the solid state device a first, relatively shorter wavelength radiation, and a down-converting luminophoric medium arranged in receiving rela ...


6
George R Brandes, Xueping Xu: Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same. Advanced Technology Materials, Oliver A Zitzmann, Steven J Hultquist, Margaret Chappuis, September 3, 2002: US06445006 (280 worldwide citation)

A microelectronic or microelectromechanical device, including a substrate and a carbon microfiber formed thereon, which may be employed as an electrical connector for the device or as a selectively translational component of a microelectromechanical (MEMS) device.


7
Jeffrey S Flynn, George R Brandes, Robert P Vaudo, David M Keogh, Xueping Xu, Barbara E Landini: METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((AL,IN,GA)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES. Advanced Technology Materials, Oliver A Zitzmann, Steven J Hultquist, Margaret Chappuis, September 10, 2002: US06447604 (136 worldwide citation)

A III-V nitride homoepitaxial microelectronic device structure comprising a III-V nitride homoepitaxial epi layer on a III-V nitride material substrate, e.g., of freestanding character. Various processing techniques are described, including a method of forming a III-V nitride homoepitaxial layer on ...


8
Robert P Vaudo, Vivek M Phanse, Michael A Tischler: Low defect density (Ga, Al, In)N and HVPE process for making same. Advanced Technology Materials, Oliver A Zitzmann, Steven J Hultquist, Margaret Chappuis, August 27, 2002: US06440823 (116 worldwide citation)

A low defect density (Ga,Al,In)N material. The (Ga, Al, In)N material may be of large area, crack-free character, having a defect density as low as 3×10


9
Gautam Bhandari, Thomas H Baum: Tantalum amide precursors for deposition of tantalum nitride on a substrate. Advanced Technology Materials, Steven J Hultquist, Margaret Chappuis, April 30, 2002: US06379748 (115 worldwide citation)

Tantalum and titanium source reagents are described, including tantalum amide and tantalum silicon nitride precursors for the deposition of tantalum nitride material on a substrate by processes such as chemical vapor deposition, assisted chemical vapor deposition, ion implantation, molecular beam ep ...


10
Robert P Vaudo, Joan M Redwing, Michael A Tischler, Duncan W Brown, Jeffrey S Flynn: GaN-based devices using thick (Ga, Al, In)N base layers. Advanced Technology Materials, Steven J Hultquist, Margaret Chappuis, March 18, 2003: US06533874 (111 worldwide citation)

A method of forming a (gallium, aluminum, indium) nitride base layer on a substrate for subsequent fabrication, e.g., by MOCVD or MBE, of a microelectronic device structure thereon. Vapor-phase (Ga, Al, In) chloride is reacted with a vapor-phase nitrogenous compound in the presence of the substrate, ...



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