1
Ho Chung Peng, Nafus Kathleen, Yoshioka Kaz, Yamaguchi Richard: Method and system for drying a substrate. Tokyo Electron, Ho Chung Peng, Nafus Kathleen, Yoshioka Kaz, Yamaguchi Richard, MAIER Gregory J, March 17, 2005: WO/2005/024325 (356 worldwide citation)

A method and system is described for drying a thin film on a substrate following liquid immersion lithography. Drying the thin film to remove immersion fluid from the thin film is performed prior to baking the thin film, thereby reducing the likely hood for interaction of immersion fluid with the ba ...


2
Lee Eric M, Toma Dorel I: Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing system. Tokyo Electron, Lee Eric M, Toma Dorel I, MAIER Gregory J, April 12, 2007: WO/2007/040856 (36 worldwide citation)

A method and system for treating a dielectric film on a plurality of substrates includes disposing the plurality of substrates in a batch processing system, the dielectric film on the plurality of substrates having a dielectric constant value less than the dielectric constant of SiO2. The plurality ...


3
Ishizaka Tadahiro, Yamamoto Kaoru: A plasma enhanced atomic layer deposition system and method. Tokyo Electron, Ishizaka Tadahiro, Yamamoto Kaoru, MAIER Gregory J, September 28, 2006: WO/2006/101857 (28 worldwide citation)

A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process. A first process material is introduced within the process chamber, and a second process mate ...


4
Escher Gary, Allen Mark A: A barrier layer for a processing element and a method of forming the same. Tokyo Electron, Escher Gary, Allen Mark A, MAIER Gregory J, November 4, 2004: WO/2004/095532 (27 worldwide citation)

In order to mitigate erosion of exposed processing elements in a processing system by the process and any subsequent contamination of the substrate in the processing system, processing elements exposed to the process are coated with a protective barrier. The protective barrier comprises a protective ...


5
Toma Dorel Ioan, Zhu Jianhong, Hamamoto Kazuhiro: Method and system for treating a dielectric film. Tokyo Electron, Toma Dorel Ioan, Zhu Jianhong, Hamamoto Kazuhiro, MAIER Gregory J, April 28, 2005: WO/2005/038863 (7 worldwide citation)

A method and system for treating a dielectric film includes exposing at least one surface of the dielectric film to a CXHy containing material, wherein x and y are each integers greater than or equal to a value of unity. The dielectric film can include a low dielectric constant film with or without ...


6
Wetzel Jeffrey T, Wang David C, Lee Eric M, Toma Dorel Ioan: Structure comprising amorphous carbon film and method of forming thereof. Tokyo Electron, Wetzel Jeffrey T, Wang David C, Lee Eric M, Toma Dorel Ioan, MAIER Gregory J, August 18, 2005: WO/2005/074449 (4 worldwide citation)

A semiconductor device includes a semiconductor substrate 110, a film stack 100 formed on the semiconductor substrate and having a film to be processed (130). A dual hard mask included in the film stack has an amorphous carbon layer 140 and an underlying hard mask layer 130 interposed between the am ...


7
Clark Robert D: Method for forming strained silicon nitride films and a device containing such films. Tokyo Electron, Clark Robert D, MAIER Gregory J, October 9, 2008: WO/2008/121463 (3 worldwide citation)

A method for forming a strained SiN film and a semiconductor device containing the strained SiN film. The method includes exposing the substrate to a gas including a silicon precursor, exposing the substrate to a gas containing a nitrogen precursor activated by a plasma source at a first level of pl ...


8
Tsukamoto Yuji, Moroz Paul, Iwama Nobuhiro, Hamamoto Shinji: Method and system for substrate temperature profile control. Tokyo Electron, Tsukamoto Yuji, Moroz Paul, Iwama Nobuhiro, Hamamoto Shinji, MAIER Gregory J, March 2, 2006: WO/2006/022997 (3 worldwide citation)

A method and system are provided for rapid temperature profile control of the upper surface of a substrate holder providing a specified uniformity or specified non-uniformity of the temperature profile on that surface. The substrate holder includes a first fluid channel positioned in a first thermal ...


9
Matsuda Tsukasa: A plasma enhanced atomic layer deposition system and method. Tokyo Electron, Matsuda Tsukasa, MAIER Gregory J, September 28, 2006: WO/2006/101856 (3 worldwide citation)

A method for depositing a film on a substrate using a plasma enhanced atomic layer deposition (PEALD) process includes disposing the substrate in a process chamber configured to facilitate the PEALD process, introducing a first process material within the process chamber and introducing a second pro ...


10
Fink Steven T: Viewing window cleaning apparatus. Tokyo Electron, Fink Steven T, MAIER Gregory J, April 1, 2004: WO/2004/026096 (2 worldwide citation)

A viewing port for a processing chamber is provided that includes a viewing window cleaning apparatus, a viewing window, and a mounting, where the viewing window cleaning apparatus is coupled to the mounting and disposed between the viewing window and the process chamber, and is configured to form a ...



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