1
Ravi Laxman
John N Gregg, Scott L Battle, Jeffrey I Banton, Donn K Naito, Ravi K Laxman: Method and apparatus to help promote contact of gas with vaporized material. Advanced Technology Materials, Hultquist PLLC, Steven J Hultquist, Maggie Chappuis, May 21, 2013: US08444120 (54 worldwide citation)

Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may compr ...


2
Ravi Laxman
John N Gregg, Scott L Battle, Jeffrey I Banton, Donn K Naito, Ravi Laxman: Method and apparatus to help promote contact of gas with vaporized material. Advanced Technology Materials, Vincent K Gustafson, Intellectual Property Technology Law, Maggie Chappuis, November 27, 2007: US07300038 (36 worldwide citation)

Structure helps support material in a container with an increased exposed surface area to help promote contact of a gas with vaporized material. For at least one disclosed embodiment, the structure may help support material for vaporization in the same form as when the material is placed at the stru ...


3
Ravi Laxman
Ziyun Wang, Chongying Xu, Ravi K Laxman, Thomas H Baum, Bryan Hendrix, Jeffrey Roeder: Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride. Advanced Technology Materials, Steven J Hultquist, Intellectual Property Technology Law, Maggie Chappuis, May 12, 2009: US07531679 (23 worldwide citation)

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon ...


4
Ravi Laxman
Ziyun Wang, Chongying Xu, Ravi K Laxman, Thomas H Baum, Bryan C Hendrix, Jeffrey F Roeder: Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride. Advanced Technology Materials, Steven J Hultquist, Intellectual Property Technology Law, Maggie Chappuis, August 31, 2010: US07786320 (14 worldwide citation)

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon ...


5
Ravi Laxman
John N Gregg, Scott L Battle, Jeffrey I Banton, Donn K Naito, Ravi K Laxman: Method and apparatus to help promote contact of gas with vaporized material. Advanced Technology Materials, Vincent K Gustafson, Intellectual Property Technology Law, Maggie Chappuis, July 7, 2009: US07556244 (13 worldwide citation)

Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may compr ...


6
Ravi Laxman
John N Gregg, Scott L Battle, Jeffrey I Banton, Donn K Naito, Ravi K Laxman: Method and apparatus to help promote contact of gas with vaporized material. Advanced Technology Materials, Vincent K Gustafson, Intellectual Property Technology Law, Maggie Chappuis, February 10, 2009: US07487956 (11 worldwide citation)

Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may inclu ...


7
Ravi Laxman
John N Gregg, Scott L Battle, Jeffrey I Banton, Donn K Naito, Ravi Laxman: Method and apparatus to help promote contact of gas with vaporized material. Advanced Technology Materials, Vincent K Gustafson, Intellectual Property Technology Law, Maggie Chappuis, November 9, 2010: US07828274 (8 worldwide citation)

Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may compr ...


8
Ravi Laxman
Tianniu Chen, Chongying Xu, Thomas H Baum, Ravi K Laxman, Alexander S Borovik: Stabilized cyclosiloxanes for use as CVD precursors for low-dielectric constant thin films. Advanced Technology Materials, Steven J Hultquist, Intellectual Property Technology Law, Maggie Chappuis, September 9, 2008: US07423166 (2 worldwide citation)

A siloxane dielectric precursor for use in a chemical vapor deposition (CVD) process, which has been dosed with a stabilizing agent(s) selected from free-radical inhibitors, end-capping agents and mixtures thereof. The stabilized siloxane dielectric precursor reduces the occurrence of premature depo ...


9
Luping Wang, Thomas H Baum, Chongying Xu: Delivery systems for efficient vaporization of precursor source material. Advanced Technology Materials, Steven J Hultquist, Intellectual Property Technology Law, Maggie Chappuis, October 14, 2008: US07437060 (58 worldwide citation)

A delivery system for vaporizing and delivering vaporized solid and liquid precursor materials at a controlled rate having particular utility for semiconductor manufacturing applications. The system includes a vaporization vessel, a processing tool and a connecting vapor line therebetween, where the ...


10
Thomas H Baum, Chongying Xu, Bryan C Hendrix, Jeffrey F Roeder: Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same. Advanced Technology Materials, Maggie Chappuis, Marianne Fuierer, John Boyd, February 28, 2006: US07005392 (36 worldwide citation)

A CVD Method of forming gate dielectric thin films on a substrate using metalloamide compounds of the formula M(NR1R2)x, wherein M is selected from the group consisting of: Zr, Hf, Y, La, Lanthanide series elements, Ta, Ti, Al; N is nitrogen; each of R1 and R2 is same or different and is independent ...



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