1
Stanford R Ovshinsky, Stephen J Hudgens, Wolodymyr Czubatyj, David A Strand, Guy C Wicker: Electrically erasable phase change memory. Energy Conversion Devices, Lawrence G Norris, November 24, 1992: US05166758 (575 worldwide citation)

An electrically erasable phase change memory utilizing a stoichiometrically and volumetrically balanced phase change material in which both the switching times and the switching energies required for the transitions between the amorphous and the crystalline states are substantially reduced below tho ...


2
Stanford R Ovshinsky, Robert R Johnson, Vincent D Cannella, Zvi Yaniv: Programmable semiconductor structures and methods for using the same. Energy Conversion Devices, Lawrence G Norris, Robert S Nolan, Richard O Gray Jr, February 24, 1987: US04646266 (437 worldwide citation)

A solid state semiconductor device is disclosed which is programmable so as to alter the impedance between its two terminals. In many embodiments, the device is programmable to have any one of four conditions: a first in which the electrical impedance is relatively high in both directions; a second ...


3
Scott H Holmberg, Richard A Flasck: Programmable cell for use in programmable electronic arrays. Energy Conversion Devices, Lawrence G Norris, February 12, 1985: US04499557 (387 worldwide citation)

An improved programmable cell for use in programmable electronic arrays such as PROM devices, logic arrays, gate arrays and die interconnect arrays. The cells have a highly non-conductive state settable and non-resettable into a highly conductive state. The cells have a resistance of 10,000 ohms or ...


4
Scott Holmberg, Richard A Flasck: Programmable cell for use in programmable electronic arrays. Energy Conversion Devices, Lawrence G Norris, Robert S Nolan, John T Winburn, July 8, 1986: US04599705 (332 worldwide citation)

A programmable cell for use in programmable electronic arrays such as PROM devices, logic arrays, gate arrays and die interconnect arrays. The cells have a highly non-conductive state settable and substantially non-resettable into a highly conductive state. The cells have a resistance of 10,000 ohms ...


5
Yair Baron, Meera Vijan: Liquid crystal matrix display having improved spacers and method of making same. Ovonic Imaging Systems, Lawrence G Norris, Robert S Nolan, Richard O Gray, March 31, 1987: US04653864 (226 worldwide citation)

Light influencing displays and more particularly liquid crystal displays are disclosed which have a pair of light transmissive electrode supports which are uniformly spaced apart by a predetermined distance over the entire display area. The electrode supports are spaced apart by spacer means includi ...


6
Robert Carroll: Apparatus and method for detecting tumors. Energy Conversion Devices, Lawrence G Norris, May 7, 1985: US04515165 (209 worldwide citation)

A device and method for the detection of tumors in human and animal tissue using transmission or reflection of nonionizing radiation, in particular, visible light having a wavelength most advantageously in the range of 400 to about 700 nanometers, and infrared light having a wavelength in the range ...


7
Robert R Johnson, Stanford R Ovshinsky: Method for making, parallel preprogramming or field programming of electronic matrix arrays. Energy Conversion Devices, Lawrence G Norris, Robert S Nolan, Richard O Gray Jr, July 1, 1986: US04597162 (188 worldwide citation)

A method of making a parallel programmed electronic matrix array including the steps of forming at least one layer of a phase changeable material on a conductive substrate, wherein the phase changeable material has a substantially nonconductive state and a comparatively high conductive state. The la ...


8
Rosa Young, Stanford R Ovshinsky: Data storage medium incorporating a transition metal for increased switching speed. Energy Conversion Devices, Richard M Goldman, Marvin S Siskind, Lawrence G Norris, December 1, 1987: US04710899 (181 worldwide citation)

A data storage medium which includes a transition metal as a switching modulator is disclosed. The data storage medium is switchable by projected beam energy, has an erased signal to noise ratio that is substantially invariant with respect to written storage time, and a contrast ratio that is substa ...


9
Herbert Ovshinsky: Vertical semiconductor processor. Energy Conversion Devices, Marvin S Siskind, Lawrence G Norris, May 12, 1987: US04664939 (167 worldwide citation)

A vertical processor for the continuous deposition of semiconductor alloy material by glow discharge techniques. The vertical processor includes a plurality of operatively interconnected deposition chambers, at least one chamber of which includes a generally vertical cathode plate about each of the ...


10
Ralph Mohr, Vincent D Cannella: Narrow band gap photovoltaic devices with enhanced open circuit voltage. Energy Conversion Devices, Lawrence G Norris, September 11, 1984: US04471155 (107 worldwide citation)

The open circuit voltage and efficiency of photovoltaic devices formed from multiple regions of semiconductor alloys including at least one narrow band gap semiconductor alloy are enhanced. The device includes a pair of doped regions and an intrinsic body between the doped regions. The intrinsic bod ...