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Ana Londergan
Ana R Londergan, Bangalore R Natarajan, Evgeni Gousev, James Randolph Webster, David Heald: MEMS cavity-coating layers and methods. Qualcomm Mems Technologies, Knobbe Martens Olson & Bear, June 8, 2010: US07733552 (11 worldwide citation)

Devices, methods, and systems comprising a MEMS device, for example, an interferometric modulator, that comprises a cavity in which a layer coats multiple surfaces. The layer is conformal or non-conformal. In some embodiments, the layer is formed by atomic layer deposition (ALD). Preferably, the lay ...


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Ana Londergan
Ana R Londergan, Bangalore R Natarajan, Evgeni Gousev, James Randolph Webster, David Heald: MEMS cavity-coating layers and methods. Qualcomm Mems Technologies, Knobbe Martens Olson & Bear, April 24, 2012: US08164815 (4 worldwide citation)

Devices, methods, and systems comprising a MEMS device, for example, an interferometric modulator, that comprises a cavity in which a layer coats multiple surfaces. The layer is conformal or non-conformal. In some embodiments, the layer is formed by atomic layer deposition (ALD). Preferably, the lay ...


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Ana Londergan
Khurshid Syed Alam, Evgeni Gousev, Marc Maurice Mignard, David Heald, Ana R Londergan, Philip Don Floyd: Equipment and methods for etching of MEMS. QUALCOMM MEMS Technologies, Knobbe Martens Olson & Bear, September 17, 2013: US08536059 (1 worldwide citation)

Etching equipment and methods are disclosed herein for more efficient etching of sacrificial material from between permanent MEMS structures. An etching head includes an elongate etchant inlet structure, which may be slot-shaped or an elongate distribution of inlet holes. A substrate is supported in ...


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Abdellatif Benjelloun Touimi
Abdellatif Benjelloun Touimi: Data processing method by passage between different sub-band domains. France Telecom, Knobbe Martens Olson & Bear, January 28, 2014: US08639735

The invention concerns data processing by passage between different subband domains, of a first number L to a second number M of subband components. After determining a third number K, least common multiple between the first number L and the second number M: a) if K is different from L, it consists ...


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Jaakko Niinistö
Jaakko Niinistö, Matti Putkonen, Mikko Ritala, Petri Räisänen, Antti Niskanen, Markku Leskelä: Method of depositing rare earth oxide thin films. ASM International, Knobbe Martens Olson & Bear, March 3, 2009: US07498272

The present invention concerns a process for depositing rare earth oxide thin films, especially yttrium, lanthanum and gadolinium oxide thin films by an ALD process, according to which invention the source chemicals are cyclopentadienyl compounds or rare earth metals, especially those of yttrium, la ...


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Ana Londergan
Ana R Londergan, Bangalore R Natarajan, Evgeni Gousev, James Randolph Webster, David Heald: Mems cavity-coating layers and methods. Qualcomm Mems Technologies, Knobbe Martens Olson & Bear, September 30, 2010: US20100245979-A1

Devices, methods, and systems comprising a MEMS device, for example, an interferometric modulator, that comprises a cavity in which a layer coats multiple surfaces. The layer is conformal or non-conformal. In some embodiments, the layer is formed by atomic layer deposition (ALD). Preferably, the lay ...


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Ana Londergan
Ion Bita, Evgeni Gousev, Ana Londergan, Xiaoming Yan: Etching processes used in mems production. Qualcomm MEMS Technologies, Knobbe Martens Olson & Bear, April 23, 2009: US20090101623-A1

The efficiency of an etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. ...


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Ana Londergan
Khurshid Syed Alam, Evgeni Gousev, Marc Maurice Mignard, David Heald, Ana R Londergan, Philip Don Floyd: Equipment and methods for etching of mems. Qualcomm Mems Technologies, Knobbe Martens Olson & Bear, September 2, 2010: US20100219155-A1

Etching equipment and methods are disclosed herein for more efficient etching of sacrificial material from between permanent MEMS structures. An etching head includes an elongate etchant inlet structure, which may be slot-shaped or an elongate distribution of inlet holes. A substrate is supported in ...



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