1
Chung Young Sir, Baird Robert W, Durlam Mark A, Grynkewich Gregory W, Salter Eric J: Passive elements in mram embedded integrated circuits. Freescale Semiconductor, Chung Young Sir, Baird Robert W, Durlam Mark A, Grynkewich Gregory W, Salter Eric J, KING Robert L, March 8, 2007: WO/2007/027381 (108 worldwide citation)

An integrated circuit device (300) comprises a substrate (301) and MRAM architecture (314) formed on the substrate (308). The MRAM architecture (314) includes a MRAM circuit (318) formed on the substrate (301); and a MRAM cell (316) coupled to and formed above the MRAM circuit (318). Additionally a ...


2
Adetutu Olubunmi O, Samavedam Srikanth B, White Bruce E: Semiconductor process and integrated circuit having dual metal oxide gate dielectric with single metal gate electrode. Freescale Semiconductor, Adetutu Olubunmi O, Samavedam Srikanth B, White Bruce E, KING Robert L, December 1, 2005: WO/2005/114718 (29 worldwide citation)

A semiconductor fabrication process includes forming first and second transistors over first and second well regions, respectively where the first transistor has a first gate dielectric and the second transistor has a second gate dielectric different from the first gate dielectric. The first transis ...


3
Mahadevan Dave S, Chapman Michael E, Salian Arvind S: Method of forming a semiconductor package and structure thereof. Freescale Semiconductor, Mahadevan Dave S, Chapman Michael E, Salian Arvind S, KING Robert L, June 2, 2005: WO/2005/050699 (13 worldwide citation)

An electromagnetic interference (EMI) and/or electromagnetic radiation shield is formed by forming a conductive layer (42, 64) over a mold encapsulant (35, 62). The conductive layer (42, 64) may be electrically coupled using a wire to the leadframe (10, 52) of the semiconductor package (2, 50). The ...


4
Oteri Oghenekome F, Mccoy James W: Resource allocation in a communication system. Freescale Semiconductor, Oteri Oghenekome F, Mccoy James W, KING Robert L, September 25, 2008: WO/2008/115660 (12 worldwide citation)

Methods and corresponding systems for determining a transmit power in a mobile device (108) include receiving, in the mobile device, a cell-wide power control parameter related to a target receive power at a serving base station (104). Thereafter, a transmit power is calculated (608) in response to ...


5
Zhang Da, Dhandapani Veeraraghavan, Goedeke Darren V, Hildreth Jill C: Multi-layer source/drain stressor. Freescale Semiconductor, Zhang Da, Dhandapani Veeraraghavan, Goedeke Darren V, Hildreth Jill C, KING Robert L, August 21, 2008: WO/2008/100687 (9 worldwide citation)

A method for forming a semiconductor device (10) includes forming a recess (26) in a source region and a recess (28) in a drain region of the semiconductor device. The method further includes forming a first semiconductor material layer (32) in the recess (26) in the source region and a second semic ...


6
He Zhongli: Video information processing system with selective chroma deblock filtering. Freescale Semiconductor, He Zhongli, KING Robert L, March 20, 2008: WO/2008/033595 (7 worldwide citation)

A video information processing system including a processing circuit (603) and a deblocking filter (131). The processing circuit provides video information (UI) including a chroma component and a luma component. The deblocking filter (131) has an input receiving the video information and an output p ...


7
Rahman Syed R, Greenberg David F, Stacer Kathryn C, Bruce Klas M, Smittle Matt B, Snyder Michael D, Whisenhunt Gary L: Cache locking device and methods thereof. Freescale Semiconductor, Rahman Syed R, Greenberg David F, Stacer Kathryn C, Bruce Klas M, Smittle Matt B, Snyder Michael D, Whisenhunt Gary L, KING Robert L, February 5, 2009: WO/2009/017890 (6 worldwide citation)

A method and device for locking a cache line of a cache is disclosed. The method includes automatically changing a state of a cache line from a valid locked state to an invalid locked state (508) in response to receiving an indication that a memory location (134) external to the cache (104) and corr ...


8
Demkov Alexander A, Eisenbeiser Kurt W: Semiconductor device structures which utilize metal sulfides. Freescale Semiconductor, KING Robert L, April 15, 2004: WO/2004/032242 (6 worldwide citation)

A semiconductor device (30) includes a continuous doped substrate (32) with a surface (44), a sulfur-based dielectric material layer positioned on the surface of the continuous doped substrate, a dielectric material layer (42) positioned on the sulfur-based dielectric material layer, and a gate cont ...


9
Hughes James David, Freytag Lynn R, Rahman Mahibur: Agc with integrated wideband interferer detection. Freescale Semiconductor, Hughes James David, Freytag Lynn R, Rahman Mahibur, KING Robert L, October 12, 2006: WO/2006/107450 (5 worldwide citation)

An automatic gain control (AGC) system for a receiver and corresponding method facilitate AGC in a receiver. The AGC system includes an on-channel detector (123) configured to provide an on-channel automatic gain control (AGC) indication; an off-channel signal detector (145) configured to provide an ...


10
Kotecha Jayesh H: Retransmission method for harq in mimo systems. Freescale Semiconductor, Kotecha Jayesh H, KING Robert L, April 2, 2009: WO/2009/042290 (5 worldwide citation)

In a closed-loop wireless communication system (200), a codeword retransmission scheme is provided which allows retransmission of a single codeword using a higher order transmission rank, which may or may not be the same as the higher order transmission rank used to originally transmit the codeword. ...



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