1
Jon J Candelaria: Enhanced mobility MOSFET device and method. Motorola, Kevin B Jackson, November 4, 1997: US05683934 (300 worldwide citation)

An enhanced mobility MOSFET device (10) comprises a channel layer (12) formed on a monocrystalline silicon layer (11). The channel layer (12) comprises an alloy of silicon and a second material with the second material substitutionally present in silicon lattice sites at an atomic percentage that pl ...


2
Jon J Candelaria: Enhanced mobility MOSFET device and method. Motorola, Kevin B Jackson, October 1, 1996: US05561302 (160 worldwide citation)

An enhanced mobility MOSFET device (10) comprises a channel layer (12) formed on a monocrystalline silicon layer (11). The channel layer (12) comprises an alloy of silicon and a second material with the second material substitutionally present in silicon lattice sites at an atomic percentage that pl ...


3
Hang Ming Liaw, Curtis Lee Burt, Stella Q Hong, Clifford P Stein: Method for forming a semiconductor device having a heteroepitaxial layer. Motorola, Kevin B Jackson, April 6, 1999: US05891769 (138 worldwide citation)

A method for forming a relaxed semiconductor layer (12) includes forming a strained semiconductor layer on a substrate (11). The strained semiconductor layer has a different lattice constant than the substrate (11). Without exposing the strained semiconductor layer to an oxidizing ambient, the strai ...


4
Robert B Davies, Frank K Baker, Jon J Candelaria, Andreas A Wild, Peter J Zdebel: Graded-channel semiconductor device. Motorola, Kevin B Jackson, January 27, 1998: US05712501 (127 worldwide citation)

A graded-channel semiconductor device (10) includes a substrate region (11) having a major surface (12). A source region (13) and a drain region (14) are formed in the substrate region (11) and are spaced apart to form a channel region (16). A doped region (18) is formed in the channel region (16) a ...


5
Tim Jones, Denise Ommen, John Baird: Low-profile ball-grid array semiconductor package. Motorola, Kevin B Jackson, July 30, 1996: US05541450 (126 worldwide citation)

A ball-grid array (BGA) semiconductor package (10,60,90) includes a substrate (31,61,91) attached to a support substrate (32,62 92). The substrate (31,61,91) has an opening (33) extending from an upper surface to a lower surface. An integrated circuit chip (18) is attached to the support substrate ( ...


6
Lalgudi M G Sundaram, Neil Tracht: Method for fabricating a vertical trench inductor. Motorola, Kevin B Jackson, December 13, 1994: US05372967 (100 worldwide citation)

A method of forming vertical trench inductor (10) includes providing a layer (11) and forming a plurality of trenches (12) vertically therein. The trenches (12) are filled with a conductive material (16) and etched using a photolithographically defined mask (17). The etching produces a conductive li ...


7
Theodore G Tessier, John W Stafford, David A Jandzinski: Three dimensional semiconductor package having flexible appendages. Motorola, Kevin B Jackson, Rennie William Dover, Robert D Atkins, August 4, 1998: US05789815 (99 worldwide citation)

A three dimensional packaging approach reduces the overall footprint for interconnecting multiple semiconductor die. An three-dimensional folded module (10) produces a final package having a footprint size reduced by an approximate factor of four when compared to conventional electronic packaging. T ...


8
Hsien Te Kevin Shih: Method and circuit for optimizing power efficiency in a DC-DC converter. Semiconductor Components, Kevin B Jackson, Robert F Hightower, August 23, 2005: US06933706 (92 worldwide citation)

In one embodiment, a turn-on delay control structure (30) includes a sense FET device (31) that is coupled to a switch node (13) in a synchronous DC-DC converter (10). The DC-DC converter includes a high-side switch (11) and a low-side switch (12). The sense FET device (31) senses current conduction ...


9
K Sooriakumar, David J Monk, Wendy K Chan, Kenneth G Goldman: Vertically integrated sensor structure and method. Motorola, Kevin B Jackson, February 4, 1997: US05600071 (69 worldwide citation)

A vertically integrated sensor structure (60) includes a base substrate (71) and a cap substrate (72) bonded to the base substrate (71). The base substrate (71) includes a transducer (78) for sensing an environmental condition. The cap substrate (72) includes electronic devices (92) formed on one su ...


10
Tim Jones, Denise Ommen, John Baird: Low-profile ball-grid array semiconductor package and method. Motorola, Kevin B Jackson, June 17, 1997: US05639695 (65 worldwide citation)

A ball-grid array (BGA) semiconductor package (10,60,90) includes a substrate (31,61,91) attached to a support substrate (32,62,92). The substrate (31,61,91) has an opening (33) extending from an upper surface to a lower surface. An integrated circuit chip (18) is attached to the support substrate ( ...