1
Henning Braunisch, Chia Pin Chiu, Aleksandar Aleksov, Hinmeng Au, Stefanie M Lotz, Johanna M Swan, Sujit Sharan: Multi-chip package and method of providing die-to-die interconnects in same. Intel Corporation, Kenneth A Nelson, July 24, 2012: US08227904 (48 worldwide citation)

A multi-chip package includes a substrate (110) having a first side (111), an opposing second side (112), and a third side (213) that extends from the first side to the second side, a first die (120) attached to the first side of the substrate and a second die (130) attached to the first side of the ...


2
Hongseok Kim, Xiangying Yang, Muthaiah Venkatachalam: Method of managing network traffic within a wireless network. Intel Corporation, Kenneth A Nelson, September 18, 2012: US08270975 (33 worldwide citation)

A method of managing network traffic within a wireless network (100) comprises identifying a plurality of base stations (111, 121, 131) within the wireless network, categorizing each one of the plurality of base stations according to its type, setting a load balancing parameter (α) for each one of t ...


3
Leonel R Arana, Michael W Newman, Je Young Chang: Microelectronic package and method of cooling same. Intel Corporation, Kenneth A Nelson on behlaf of Intel Corporation, September 22, 2009: US07592697 (32 worldwide citation)

A microelectronic package comprises a chip stack (110) that includes a substrate (111), a first die (112) over the substrate and a second die (113) over the first die, a first underfill layer (114) between the substrate and the first die, and a second underfill layer (115) between the first die and ...


4
Ravi Mahajan, Sandeep Sane: Microelectronic package containing silicon patches for high density interconnects, and method of manufacturing same. Intel Corporation, Kenneth A Nelson, November 22, 2011: US08064224 (31 worldwide citation)

A microelectronic package comprises a substrate (110), a silicon patch (120) embedded in the substrate, a first interconnect structure (131) at a first location of the silicon patch and a second interconnect structure (132) at a second location of the silicon patch, and an electrically conductive li ...


5
Mark L Doczy, Justin K Brask, Jack Kavalieros, Uday Shah, Matthew V Metz, Suman Datta, Ramune Nagisetty, Robert S Chau: Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode. Intel Corporation, Kenneth A Nelson, August 31, 2010: US07785958 (29 worldwide citation)

A method for making a semiconductor device is described. That method comprises forming a first dielectric layer on a substrate, a trench within the first dielectric layer, and a second dielectric layer on the substrate. The second dielectric layer has a first part that is formed in the trench and a ...


6
Gregory M Chrysler, Ravi V Mahajan, Chia Pin Chiu: Microelectronic package and method of cooling an interconnect feature in same. Intel Corporation, Kenneth A Nelson, December 14, 2010: US07851905 (26 worldwide citation)

A microelectronic package comprises a substrate (110, 310), a die (320) supported by the substrate, an interconnect feature (130, 230, 330) connecting the die and the substrate to each other, and a thermoelectric cooler (140, 170, 240, 340) adjacent to the interconnect feature.


7
Ioan Sauciuc, Gregory M Chrysler: Liquid metal thermal interface for an integrated circuit device. Intel Corporation, Kenneth A Nelson, March 25, 2008: US07348665 (25 worldwide citation)

A liquid metal thermal interface for an integrated circuit die. The liquid metal thermal interface may be disposed between the die and another heat transfer element, such as a heat spreader or heat sink. The liquid metal thermal interface includes a liquid metal in fluid communication with a surface ...


8
Jadhav G Susheel, Daoqiang Lu: Apparatus and method for attaching a semiconductor die to a heat spreader. Intel Corporation, Kenneth A Nelson, Intel Corporation, August 5, 2008: US07407085 (24 worldwide citation)

Embodiments of an apparatus and method for attaching a semiconductor die to a heat spreader (or other thermal component) are disclosed. The apparatus includes a substantially flat surface to receive a number of die, and the die may be held in place on the surface by a flux, the flux being subsequent ...


9
Willy Rachmady, Soley Ozer, Jason Klaus: Metal gate structure and method of manufacturing same. Intel Corporation, Kenneth A Nelson, January 25, 2011: US07875519 (17 worldwide citation)

A method of manufacturing a metal gate structure includes providing a substrate (110) having formed thereon a gate dielectric (120), a work function metal (130) adjacent to the gate dielectric, and a gate metal (140) adjacent to the work function metal; selectively forming a sacrificial capping laye ...


10
Nachiket R Raravikar, Daewoong Suh, Leonel Arana, James C Matayabas Jr: Through-die metal vias with a dispersed phase of graphitic structures of carbon for reduced thermal expansion and increased electrical conductance. Intel Corporation, Kenneth A Nelson, February 23, 2010: US07666768 (14 worldwide citation)

A method, apparatus and various material-architectures in an electrically conductive through die via formed of a composite material with a continuous phase of matrix metal and a dispersed phase of graphitic structures of carbon, wherein bulk material properties of the composite material differ from ...



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