1
Henning Braunisch, Chia Pin Chiu, Aleksandar Aleksov, Hinmeng Au, Stefanie M Lotz, Johanna M Swan, Sujit Sharan: Multi-chip package and method of providing die-to-die interconnects in same. Intel Corporation, Kenneth A Nelson, July 24, 2012: US08227904 (50 worldwide citation)

A multi-chip package includes a substrate (110) having a first side (111), an opposing second side (112), and a third side (213) that extends from the first side to the second side, a first die (120) attached to the first side of the substrate and a second die (130) attached to the first side of the ...


2
Hongseok Kim, Xiangying Yang, Muthaiah Venkatachalam: Method of managing network traffic within a wireless network. Intel Corporation, Kenneth A Nelson, September 18, 2012: US08270975 (35 worldwide citation)

A method of managing network traffic within a wireless network (100) comprises identifying a plurality of base stations (111, 121, 131) within the wireless network, categorizing each one of the plurality of base stations according to its type, setting a load balancing parameter (α) for each one of t ...


3
Ravi Mahajan, Sandeep Sane: Microelectronic package containing silicon patches for high density interconnects, and method of manufacturing same. Intel Corporation, Kenneth A Nelson, November 22, 2011: US08064224 (33 worldwide citation)

A microelectronic package comprises a substrate (110), a silicon patch (120) embedded in the substrate, a first interconnect structure (131) at a first location of the silicon patch and a second interconnect structure (132) at a second location of the silicon patch, and an electrically conductive li ...


4
Leonel R Arana, Michael W Newman, Je Young Chang: Microelectronic package and method of cooling same. Intel Corporation, Kenneth A Nelson on behlaf of Intel Corporation, September 22, 2009: US07592697 (32 worldwide citation)

A microelectronic package comprises a chip stack (110) that includes a substrate (111), a first die (112) over the substrate and a second die (113) over the first die, a first underfill layer (114) between the substrate and the first die, and a second underfill layer (115) between the first die and ...


5
Mark L Doczy, Justin K Brask, Jack Kavalieros, Uday Shah, Matthew V Metz, Suman Datta, Ramune Nagisetty, Robert S Chau: Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode. Intel Corporation, Kenneth A Nelson, August 31, 2010: US07785958 (30 worldwide citation)

A method for making a semiconductor device is described. That method comprises forming a first dielectric layer on a substrate, a trench within the first dielectric layer, and a second dielectric layer on the substrate. The second dielectric layer has a first part that is formed in the trench and a ...


6
Gregory M Chrysler, Ravi V Mahajan, Chia Pin Chiu: Microelectronic package and method of cooling an interconnect feature in same. Intel Corporation, Kenneth A Nelson, December 14, 2010: US07851905 (26 worldwide citation)

A microelectronic package comprises a substrate (110, 310), a die (320) supported by the substrate, an interconnect feature (130, 230, 330) connecting the die and the substrate to each other, and a thermoelectric cooler (140, 170, 240, 340) adjacent to the interconnect feature.


7
Ioan Sauciuc, Gregory M Chrysler: Liquid metal thermal interface for an integrated circuit device. Intel Corporation, Kenneth A Nelson, March 25, 2008: US07348665 (25 worldwide citation)

A liquid metal thermal interface for an integrated circuit die. The liquid metal thermal interface may be disposed between the die and another heat transfer element, such as a heat spreader or heat sink. The liquid metal thermal interface includes a liquid metal in fluid communication with a surface ...


8
Jadhav G Susheel, Daoqiang Lu: Apparatus and method for attaching a semiconductor die to a heat spreader. Intel Corporation, Kenneth A Nelson, Intel Corporation, August 5, 2008: US07407085 (24 worldwide citation)

Embodiments of an apparatus and method for attaching a semiconductor die to a heat spreader (or other thermal component) are disclosed. The apparatus includes a substantially flat surface to receive a number of die, and the die may be held in place on the surface by a flux, the flux being subsequent ...


9
Willy Rachmady, Soley Ozer, Jason Klaus: Metal gate structure and method of manufacturing same. Intel Corporation, Kenneth A Nelson, January 25, 2011: US07875519 (19 worldwide citation)

A method of manufacturing a metal gate structure includes providing a substrate (110) having formed thereon a gate dielectric (120), a work function metal (130) adjacent to the gate dielectric, and a gate metal (140) adjacent to the work function metal; selectively forming a sacrificial capping laye ...


10
Oswald L Skeete: Integrated circuit package and method of manufacturing same. Intel Corporation, Kenneth A Nelson, October 11, 2011: US08035216 (14 worldwide citation)

Decoupling capacitors are frequently used in computer systems in order to control noise. In general, decoupling capacitors are placed as close as possible to the devices they protect in order to minimize the amount of line inductance and series resistance between the devices and the capacitors. An i ...