1
Jon T Fitch, Papu Maniar, Keith E Witek, Jerry Gelatos, Reza Moazzami, Sergio A Ajuria: Method of forming a semiconductor structure having an air region. Motorola, Keith E Witek, June 28, 1994: US05324683 (406 worldwide citation)

A method for forming an air region or an air bridge overlying a base layer (12). Air regions (20a, 20b, 28a, and 48) are formed overlying the base layer (12) to provide for improved dielectric isolation of adjacent conductive layers, provide air-isolated conductive interconnects, and/or form many ot ...


2
Bikas Maiti, Philip J Tobin, Rama I Hegde, Jesus Cuellar: Method for forming high dielectric constant metal oxides. Motorola, Keith E Witek, February 1, 2000: US06020024 (215 worldwide citation)

A method for forming a metal gate (20) structure begins by providing a semiconductor substrate (12). The semiconductor substrate (12) is cleaned to reduce trap sites. A nitrided layer (14) having a thickness of less than approximately 20 Angstroms is formed over the substrate (12). This nitrided lay ...


3
James E Dunning, James R Lundberg, Richard S Ramus, James G Gay: Output circuit for interfacing integrated circuits having different power supply potentials. Motorola, Keith E Witek, March 7, 1995: US05396128 (179 worldwide citation)

An output driver circuit has a circuitry portion (70) which is used to generate a Drive-Hi control signal in response to an Output Enable, an optional Precondition signal, and a Data Input signal. A circuit portion (75) ensures that the Drive-Hi control signal is maintained at a voltage which is sub ...


4
Carlos A Mazure, Jon T Fitch, James D Hayden, Keith E Witek: Semiconductor memory device and method of formation. Motorola, Keith E Witek, May 3, 1994: US05308782 (178 worldwide citation)

A semiconductor memory device is formed having a substrate (12). A diffusion (14) is formed within the substrate (12). A first vertical transistor stack (122) is formed. A second vertical transistor stack (124) is formed. The first vertical transistor stack (122) has a transistor (100) underlying a ...


5
James G Gay, William B Ledbetter Jr: Data processing system and method for performing dynamic bus termination. Motorola, Keith E Witek, November 14, 1995: US05467455 (174 worldwide citation)

A data processing system and a method for performing dynamic bus signal termination uses a dynamic bus termination circuitry (14 or 16) with a device (10 or 12). The circuitry is enabled when data is incoming to the device and is disabled when data is outgoing from the device to selectively reduce u ...


6
Ajay Jain, Kevin Lucas: Method for forming a dielectric tantalum nitride layer as an anti-reflective coating (ARC). Motorola, Keith E Witek, April 21, 1998: US05741626 (171 worldwide citation)

The present invention provides an anti-reflective Ta.sub.3 N.sub.5 coating which can be used in a dual damascene structure and for I line or G line lithographies. In addition, the Ta.sub.3 N.sub.5 coating may also be used as an etch stop and a barrier layer. A dual damascene structure is formed by d ...


7
Veena Misra, Suresh Venkatesan, Christopher C Hobbs, Brad Smith, Jeffrey S Cope, Earnest B Wilson: Method for forming an MOS transistor having a metallic gate electrode that is formed after the formation of self-aligned source and drain regions. Motorola, Keith E Witek, September 28, 1999: US05960270 (163 worldwide citation)

A method for forming a metal gate MOS transistor begins by forming source and drain electrodes (26, 28, and/or 118) within a substrate (12 or 102). These source and drain regions (26, 28, and 118) are self-aligned to a lithographically-patterned feature (24 or 108). After formation of the source and ...


8
Janos Farkas, Rajeev Bajaj, Melissa Freeman, David K Watts, Sanjit Das: Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers. Motorola, Keith E Witek, December 14, 1999: US06001730 (158 worldwide citation)

A method for forming a copper interconnect on an integrated circuit (IC) begins by forming a dielectric layer (20) having an opening. A tantalum-based barrier layer (21), such as TaN or TaSiN, is formed within the opening in the layer (20). A copper layer (22) is formed over the barrier layer (21). ...


9
Paul G Y Tsui, Hsing Huang Tseng, Navakanta Bhat, Ping Chen: Method for making a dual-thickness gate oxide layer using a nitride/oxide composite region. Motorola, Keith E Witek, September 28, 1999: US05960289 (148 worldwide citation)

A method for forming a dual gate oxide (DGO) structure begins by forming a first oxide layer (106) within active areas (110) and (112). A protection layer (108a) is then formed over the layer (106). A mask (114) is used to allow removal of the layers (106 and 108a) from the active area (110). A ther ...


10
Keith E Witek: Computerized facsimile (FAX) system and method of operation. Motorola, Keith E Witek, October 24, 1995: US05461488 (142 worldwide citation)

A fax system is automated herein by using a modem (10), a computer (12), and an office network which coupled the computer (12) to a plurality of end-user computers (26). A fax is received by the computer (12) through the modem (10). Once the fax is received by the computer (12), a program (14) store ...