1
Hongyong Zhang, Hideto Ohnuma, Yasuhiko Takemura: Process for fabricating thin film transistor. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Karlton C Butts, Sixbey Friedman Leedom & Ferguson, June 25, 1996: US05529937 (340 worldwide citation)

After a pattern is transferred on silicon film crystallized by annealing, the silicon film is annealed by radiation of intense rays for a short time. Especially, in the crystallizing process by annealing, an element which promotes crystallization such as nickel is doped therein. The area not crystal ...


2
Hideomi Suzawa: Semiconductor device including active matrix circuit. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Karlton C Butts, Sixbey Friedman Leedom & Ferguson P C, January 27, 1998: US05712495 (228 worldwide citation)

A combination of a doping process and the use of side walls which allows the source and drain of a thin film transistor of an active matrix circuit to be doped with only one of N-type and P-type impurities and which allows the source and drain of a thin film transistor used in a peripheral circuit o ...


3
Akiharu Miyanaga, Hisashi Ohtani, Yasuhiko Takemura: Semiconductor device formed using a catalyst element capable of promoting crystallization. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Karlton C Butts, Sixbey Friedman Leedom & Ferguson P C, January 6, 1998: US05705829 (201 worldwide citation)

A semiconductor device using a crystalline semiconductor film is manufactured. The crystalline semiconductor film is formed by providing an amorphous silicon film with a catalyst metal for promoting a crystallization thereof and then heated for performing a thermal crystallization, following which t ...


4
Hongyong Zhang, Toru Takayama, Yasuhiko Takemura: Semiconductor device having crystalline thin film transistors. Semiconductor Energy Laboratory Co, Gerald J Ferguson Jr, Karlton C Butts, Sixbey Friedman Leedom & Ferguson, March 25, 1997: US05614733 (198 worldwide citation)

A semiconductor device has a first thin film transistor and a second thin film transistor formed on a substrate. Both of the first and second thin film transistor have a crystallized channel region. One of the first and second thin film transistor is doped with a catalyst metal at a sufficient conce ...


5
Roger J Hapka: Remote control of engine idling time. Cummins Engine Company, Charles M Leedom Jr, Karlton C Butts, Sixbey Friedman Leedom & Ferguson, April 8, 1997: US05619412 (183 worldwide citation)

A system for remotely accessing an engine control system and selectively controlling and changing an existing engine algorithm. In a preferred embodiment, the system comprises an on-board vehicle communications system which receives and sends data to a remote central fixed base site. A truck operato ...


6
Yasuhiko Takemura: Semiconductor device and method of fabricating same. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Karlton C Butts, Sixbey Friedman Leedom & Ferguson, April 16, 1996: US05508533 (164 worldwide citation)

A highly reliable thin-film transistor (TFT) having excellent characteristics. A silicon film is grown laterally by adding a metal element such as nickel to promote crystallization. A crystal grain boundary is formed parallel to a gate electrode and around the center of the gate electrode. Thus, the ...


7
Toru Takayama, Hongyong Zhang, Yasuhiko Takemura: Process of fabricating a semiconductor device in which one portion of an amorphous silicon film is thermally crystallized and another portion is laser crystallized. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Karlton C Butts, Sixbey Friedman Leedom & Ferguson, April 29, 1997: US05624851 (153 worldwide citation)

A semiconductor circuit and a process for fabricating the same, said process comprising forming in contact with an amorphous silicon film, a substance containing a catalytic element; crystallizing selected portions of the amorphous silicon film by annealing said film at a temperature lower than the ...


8
Hideomi Koinuma, Tadashi Shiraishi, Tohru Inoue, Kiyoto Inomata, Shigenori Hayashi, Akiharu Miyanaga, Shunpei Yamazaki: Method for plasma processing and apparatus for plasma processing. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Karlton C Butts, Sixbey Friedman Leedom & Ferguson, August 27, 1996: US05549780 (149 worldwide citation)

An apparatus for generating plasma of helium mainly-contained gas added with halogen element using high-frequency energy which is applied between concentrically-arranged electrodes to conduct an etching treatment on a substrate with the thus-generated plasma, is equipped with a grounded electrode on ...


9
Toshimitsu Konuma, Masaaki Hiroki, Hongyong Zhang, Mutsuo Yamamoto, Yasuhiko Takemura: Method of fabricating thin film semiconductor integrated circuit. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Karlton C Butts, Sixbey Friedman Leedom & Ferguson, April 15, 1997: US05620905 (146 worldwide citation)

In a semiconductor integrated circuit, a plurality of thin film transistors (TFTs) are formed on the same substrate having an insulating surface. Since gate electrodes formed in the TFTs are electrically insulated each other, voltages are applied independently to gate electrodes in an electrolytic s ...


10
Hongyong Zhang: Semiconductor device having an insulated gate field effect thin film transistor. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Karlton C Butts, Sixbey Friedman Leedom & Ferguson P C, February 10, 1998: US05717224 (144 worldwide citation)

A channel forming region of a thin-film transistor is covered with an electrode and wiring line that extends from a source line. As a result, the channel forming region is prevented from being illuminated with light coming from above the thin-film transistor, whereby the characteristics of the thin- ...



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